GB682105A - Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material - Google Patents

Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material

Info

Publication number
GB682105A
GB682105A GB8663/50A GB866350A GB682105A GB 682105 A GB682105 A GB 682105A GB 8663/50 A GB8663/50 A GB 8663/50A GB 866350 A GB866350 A GB 866350A GB 682105 A GB682105 A GB 682105A
Authority
GB
United Kingdom
Prior art keywords
tube
silicon
base plate
impurity
vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8663/50A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sueddeutsche Apparate Fabrik GmbH
Original Assignee
Sueddeutsche Apparate Fabrik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sueddeutsche Apparate Fabrik GmbH filed Critical Sueddeutsche Apparate Fabrik GmbH
Publication of GB682105A publication Critical patent/GB682105A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An electric semiconducting device for use as a rectifier or a crystal triode is prepared by depositing on a base plate a mixture of semiconducting material and a small percentage of donor or acceptor <PICT:0682105/III/1> <PICT:0682105/III/2> impurity material, by reducing a volatile compound of semiconducting and impurity material with a volatile or gaseous reducing agent in the presence of the base plate. In one example, Fig. 1, hydrogen is passed at a controlled rate through silicon tetrachloride in vessel 3 at temperature T1, and at a separately controlled rate through a mixture of silicon tetrachloride and boron trichloride in vessel 4 at temperature T2. The outputs are combined and passed through an oven 8 where the reaction product is deposited on a base plate 9 of carbon, or a high melting point conducting material which does not alloy with silicon, or aluminium oxide or a ceramic material. The proportion of boron which acts as an acceptor impurity may thus be controlled to provide layers of desired characteristics in selected positions in the resulting silicon element. A small percentage of germanium or tin tetrachloride may be added to vessel 3. Alternatively, germanium may be substituted for silicon in the process, and arsenic hydride or antimony hydride may replace boron to provide a donor impurity. Zinc may alternatively be used as a reducing agent, and since this material has a high vapour pressure, reduction may be effected without using a continuous flow of gas through the apparatus. In Fig. 3, a vapour mixture of silicon tetrachloride and boron trichloride is supplied from a tube 30 to a tube 25 which is situated in an outer tube 28. The reducing agent consists of aluminium vapour supplied from a chamber 29 at the end of tube 25. Tube 28 is connected to a pump for removing unwanted gases. Reaction takes place in a central compartment of tube 25 where base plate 9 is provided. Partitions may be used to direct the vapour flow.
GB8663/50A 1949-04-06 1950-04-05 Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material Expired GB682105A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP0039090 1949-04-06

Publications (1)

Publication Number Publication Date
GB682105A true GB682105A (en) 1952-11-05

Family

ID=7376279

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8663/50A Expired GB682105A (en) 1949-04-06 1950-04-05 Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material

Country Status (5)

Country Link
US (1) US2701216A (en)
CH (1) CH294487A (en)
DE (1) DE883784C (en)
FR (1) FR1107452A (en)
GB (1) GB682105A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1033784B (en) * 1954-12-07 1958-07-10 Siemens Ag Process for the aftertreatment of a semiconductor material for directional conductors, transistors and. like
US2847624A (en) * 1955-02-24 1958-08-12 Sylvania Electric Prod Semiconductor devices and methods
DE1138481B (en) * 1961-06-09 1962-10-25 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
DE1166938B (en) * 1960-07-01 1964-04-02 Siemens Ag Method for manufacturing a semiconductor device
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities
DE1193918B (en) * 1960-06-14 1965-06-03 Siemens Ag Process for the production of a homogeneously doped, monocrystalline semiconductor body by decomposing vaporous semiconductor halides
DE1248168B (en) * 1963-09-30 1967-08-24 Philco Ford Corp Eine Ges Nach Process for the production of semiconductor devices
DE1639545B1 (en) * 1961-08-21 1969-09-04 Siemens Ag Method for producing a semiconductor arrangement with zones of different conductivity types

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL178978B (en) * 1952-06-19 Texaco Ag METHOD FOR PREPARING A LITHIUM SOAP BASED GREASE.
NL98697C (en) * 1952-08-20
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
BE536122A (en) * 1954-03-05
NL87348C (en) * 1954-03-19 1900-01-01
NL246576A (en) * 1954-05-18 1900-01-01
US2928761A (en) * 1954-07-01 1960-03-15 Siemens Ag Methods of producing junction-type semi-conductor devices
DE1228342B (en) * 1954-07-14 1966-11-10 Siemens Ag Diffusion process for doping a surface layer of solid semiconductor bodies
NL107344C (en) * 1955-03-23
DE1040133B (en) * 1955-05-27 1958-10-02 Siemens Ag Process for the production of surface rectifiers with a semiconductor from a two-component compound
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1227433B (en) * 1955-07-28 1966-10-27 Siemens Ag Process for the installation of defined interference points in metal or semiconductor layers
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
DE1130078B (en) * 1956-08-10 1962-05-24 Siemens Ag Process for doping semiconductor crystals for semiconductor components
GB878765A (en) * 1956-11-05 1961-10-04 Plessey Co Ltd Improvements in and relating to processes for the manufacture of semiconductor materials
NL244520A (en) * 1958-10-23
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
NL133151C (en) * 1959-05-28 1900-01-01
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article
US3190773A (en) * 1959-12-30 1965-06-22 Ibm Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
NL260906A (en) * 1960-02-12
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
IT649936A (en) * 1960-05-09
NL258408A (en) * 1960-06-10
NL274847A (en) * 1961-02-16
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
US3211583A (en) * 1961-09-19 1965-10-12 Melpar Inc Pyrolytic deposition of germanium
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
NL288035A (en) * 1962-01-24
US3152932A (en) * 1962-01-29 1964-10-13 Hughes Aircraft Co Reduction in situ of a dipolar molecular gas adhering to a substrate
NL302320A (en) * 1963-02-08
GB1093822A (en) * 1963-07-18 1967-12-06 Plessey Uk Ltd Improvements in or relating to the manufacture of semiconductor devices
US3355318A (en) * 1963-09-26 1967-11-28 Union Carbide Corp Gas plating metal deposits comprising boron
DE1286512B (en) * 1963-10-08 1969-01-09 Siemens Ag Process for the production of, in particular, rod-shaped semiconductor crystals with doping which is homogeneous or approximately homogeneous over the entire crystal
DE1245335B (en) * 1964-06-26 1967-07-27 Siemens Ag Process for the production of monocrystalline, homogeneously boron-doped growth layers, in particular consisting of silicon or germanium, on monocrystalline base bodies
DE1276606B (en) * 1965-06-28 1968-09-05 Siemens Ag Process for the production of single-crystalline doped layers from semiconductor material by epitaxial growth

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1774410A (en) * 1925-10-05 1930-08-26 Philips Nv Process of precipitating boron
US1964322A (en) * 1930-11-07 1934-06-26 Corning Glass Works Electrically conducting coating on vitreous substances and method of producing it
DE617071C (en) * 1931-09-11 1935-08-12 Aeg Process and device for the production of selenium cells
NL49864C (en) * 1935-06-22
AT155712B (en) * 1936-06-20 1939-03-10 Aeg Process for the production of semiconductor coatings.
US2217205A (en) * 1937-08-26 1940-10-08 Bell Telephone Labor Inc Photoelectric tube
US2313410A (en) * 1939-03-31 1943-03-09 Bell Telephone Labor Inc Preparation of boron compositions
US2501051A (en) * 1943-02-11 1950-03-21 Duriron Co Siliconizing processes
BE472806A (en) * 1943-08-21
US2467734A (en) * 1945-04-12 1949-04-19 Farnsworth Res Corp Shading compensating mosaic screen electrode
US2484519A (en) * 1946-01-15 1949-10-11 Martin Graham Robert Method of coating surfaces with boron
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
US2552626A (en) * 1948-02-17 1951-05-15 Bell Telephone Labor Inc Silicon-germanium resistor and method of making it

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1033784B (en) * 1954-12-07 1958-07-10 Siemens Ag Process for the aftertreatment of a semiconductor material for directional conductors, transistors and. like
US2847624A (en) * 1955-02-24 1958-08-12 Sylvania Electric Prod Semiconductor devices and methods
DE1193918B (en) * 1960-06-14 1965-06-03 Siemens Ag Process for the production of a homogeneously doped, monocrystalline semiconductor body by decomposing vaporous semiconductor halides
DE1166938B (en) * 1960-07-01 1964-04-02 Siemens Ag Method for manufacturing a semiconductor device
DE1138481B (en) * 1961-06-09 1962-10-25 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
DE1138481C2 (en) * 1961-06-09 1963-05-22 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
DE1639545B1 (en) * 1961-08-21 1969-09-04 Siemens Ag Method for producing a semiconductor arrangement with zones of different conductivity types
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities
DE1248168B (en) * 1963-09-30 1967-08-24 Philco Ford Corp Eine Ges Nach Process for the production of semiconductor devices

Also Published As

Publication number Publication date
DE883784C (en) 1953-06-03
US2701216A (en) 1955-02-01
CH294487A (en) 1953-11-15
FR1107452A (en) 1956-01-03

Similar Documents

Publication Publication Date Title
GB682105A (en) Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material
US2910394A (en) Production of semi-conductor material for rectifiers
GB692250A (en) Methods of making semiconductive bodies
US2768061A (en) Hydrogen reduction method and apparatus
GB745698A (en) Improvements in or relating to methods of producing silicon of high purity
US2556711A (en) Method of producing rectifiers and rectifier material
US3171755A (en) Surface treatment of high-purity semiconductor bodies
GB908158A (en) A process for depositing semi-conductor material for a gaseous or vaporous compound
US3138434A (en) Deposition method of forming a pyrolytic graphite article
GB923801A (en) Improvements in methods of producing semi-conductor arrangements
US1988781A (en) Process for preparing a mixture of nitrogen and hydrogen
US3155621A (en) Production of silicon with a predetermined impurity content
GB1016578A (en) Improvements in or relating to processes for the production of high purity monocrystalline silicon
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
US3099523A (en) Method of producing hyperpure silicon, silicon carbide and germanium
US3323954A (en) Method of producing doped semiconductor material and apparatus for carrying out the said methods
US3432330A (en) Pyrolytic vacuum deposition from gases
US3342551A (en) Method and apparatus for producing a semiconducting compound of two or more components
GB844542A (en) Process and apparatus for growing crystalline boules
GB1124328A (en) Improvements in or relating to the epitaxial deposition of crystalline layers
US3804664A (en) Process for chemical vapor deposition of zirconium carbide
US2929678A (en) Method of producing zinc selenide
GB1056430A (en) Epitaxial process and apparatus for semiconductors
US2487474A (en) Preparation of magnesium nitride
US3030418A (en) Stabilization of diboraneacetylene liquid reaction products