US2484519A - Method of coating surfaces with boron - Google Patents

Method of coating surfaces with boron Download PDF

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US2484519A
US2484519A US686453A US68645346A US2484519A US 2484519 A US2484519 A US 2484519A US 686453 A US686453 A US 686453A US 68645346 A US68645346 A US 68645346A US 2484519 A US2484519 A US 2484519A
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boron
coating
compound
article
coating surfaces
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Martin Graham Robert
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28Deposition of only one other non-metal element

Definitions

  • This invention relates to the coating of various surfaces with boron and more particularly to a method of forming a thin film containing boron on metallic, glass or other surfaces.
  • boron under the influence of fluxes of thermal neutrons emits charged particles the ionization due to which can be measured, it has been used in ionization chambers employed in detecting neutrons and in measuring their intensities.
  • Previous methods have employed an adhesive vehicle containing a boron compound, such as boron carbide, in finely divided condition. Boron obtained by the thermal decomposition of diborane has been used but diborane is difficult to obtain. Other uses of surfaces coated with a thin film of boron will suggest themselves to those skilled in the art.
  • the object of the present invention is to provide a method whereby readily available boron compounds may be employed to deposit from the vapour phase a continuous film containin boron uniformly distributed on a surface to be coated.
  • boron alkyl compounds are used to provide the boron.
  • Boron trimethyl is preferred.
  • the triethyl and the tripropyl compound may be used but at somewhat lower temperatures.
  • Boron trimethyl is conveniently prepared in accordance with the following equations:
  • An ethereal medium is used, and, for convenience in handling the boron trifiuoride is added in the form of its ether adduct, (C2H5)2OZBF3. Since the product is spontaneously inflammable, the reaction is carried out in an atmosphere of an inert gas, such as nitrogen, and the boron trimethyl is separated by condensation in a trap cooled by liquid nitrogen. It is purified by fractional distillation at 95 C. and is stored as a gas. It boils at 20.2 C.
  • the article to be coated is placed in an oven in which it may be heated to the desired temperature of about 550 C. and the gaseous boron alkyl compound is passed into the oven under a pressure of about 1 cm. of mercury to contact the article. Provision is necessarily made to evacuate the oven before admitting the gaseous compound.
  • the temperature of the article may be maintained by any suitable furnace electrically or otherwise heated.
  • the boron alkyl compound is thus thermally decomposed at and on the heated surface of the article yielding free boron which deposits adherently on the 2 surface. A portion of carbon usually deposits along with the boron, but for use in ionization chambers this is of little consequence.
  • the boron alkyl compoimd When the surface to be coated is relatively small in relation to the volume of the furnace, it has been found advantageous to add the boron alkyl compoimd to the oven intermittently.
  • the compound may be released under reduced pressure into the oven where the pressure may reach about 2 cm. of mercury and allowed to react for a short period when the residue of gases is pumped off to a pressure of say 0.1 mm. and then more of the boron alkyl compound is admitted. This is repeated until the desired thickness of coating is obtained. With this procedure the amount of the boron compound required for a given coating is reduced.
  • ionization chambers are useful for measuring fluxes of slow neutrons.
  • ionization chambers for the monitoring and control of piles a coating of about 1 mg. of boron per square centimeter is sufficient.
  • the nuclear reaction involved is:
  • the range of alpha particles from the reaction corresponds to a slightly smaller thickness than this, and the slow neutron flux is reduced to the extent of about 4% per mg./sq. cm. of coating, with a consequent reduction in the ionization current produced.
  • a method of coating surfaces which comprises maintaining the article to be coated at a temperature of about 550 C. in an evacuated chamber and passing one of a group consisting of trimethyl boron, triethyl boron and tripropyl boron in the vapour phase'and under reduced pressure into contact with the surface of the heated article to cause boron to be deposited thereon in a thin film.
  • a method of coating surfaces of articles with REFERENCES CITED boron in a chamber which comprises evacuating the chamber, heating the article in the chamber.
  • the following references are of record in the to a temperature of about 550 C. and admitting file of this patent: to the chamber one of a group consisting of tri- 5 methyl boron, triethyl boron and tripropyl boron UNITED STATES PATENTS to a pressure of about one centimeter of mercury Number Name Date to contact the surfaces of the heated article and 597,172 WilmOWSkY 11, 1893 deposit boron thereon. 1,774,410 Van Arkel Aug. 26, 1930 GRAHAM ROBERT MARTIN. H 10 '2.303,658 Porter Dec. 1, 1942

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Description

Patented Oct. 11, 1949 y f2,4s4;519,; METHOD OF COATING SURFACES WITH ORON Graham Robert Martin, Montreal, Quebec, Canada No Drawing. Application July 26,
1946, Serial N0.
686,453. In Canada January 15, 1946 4 Claims. 1
This invention relates to the coating of various surfaces with boron and more particularly to a method of forming a thin film containing boron on metallic, glass or other surfaces.
Because boron under the influence of fluxes of thermal neutrons emits charged particles the ionization due to which can be measured, it has been used in ionization chambers employed in detecting neutrons and in measuring their intensities. Previous methods have employed an adhesive vehicle containing a boron compound, such as boron carbide, in finely divided condition. Boron obtained by the thermal decomposition of diborane has been used but diborane is difficult to obtain. Other uses of surfaces coated with a thin film of boron will suggest themselves to those skilled in the art.
The object of the present invention is to provide a method whereby readily available boron compounds may be employed to deposit from the vapour phase a continuous film containin boron uniformly distributed on a surface to be coated.
In carrying out the invention boron alkyl compounds are used to provide the boron. Boron trimethyl is preferred. The triethyl and the tripropyl compound may be used but at somewhat lower temperatures. Boron trimethyl is conveniently prepared in accordance with the following equations:
An ethereal medium is used, and, for convenience in handling the boron trifiuoride is added in the form of its ether adduct, (C2H5)2OZBF3. Since the product is spontaneously inflammable, the reaction is carried out in an atmosphere of an inert gas, such as nitrogen, and the boron trimethyl is separated by condensation in a trap cooled by liquid nitrogen. It is purified by fractional distillation at 95 C. and is stored as a gas. It boils at 20.2 C.
In forming the coating the article to be coated is placed in an oven in which it may be heated to the desired temperature of about 550 C. and the gaseous boron alkyl compound is passed into the oven under a pressure of about 1 cm. of mercury to contact the article. Provision is necessarily made to evacuate the oven before admitting the gaseous compound. The temperature of the article may be maintained by any suitable furnace electrically or otherwise heated. The boron alkyl compound is thus thermally decomposed at and on the heated surface of the article yielding free boron which deposits adherently on the 2 surface. A portion of carbon usually deposits along with the boron, but for use in ionization chambers this is of little consequence.
For coating a steel surface of 1000 sq. cm. about 8 liters of gaseous boron trimethyl passed over the surface, maintained at a temperature of about 550 C., during a period of about two to three hours gave a good coating.
When the surface to be coated is relatively small in relation to the volume of the furnace, it has been found advantageous to add the boron alkyl compoimd to the oven intermittently. Thus the compound may be released under reduced pressure into the oven where the pressure may reach about 2 cm. of mercury and allowed to react for a short period when the residue of gases is pumped off to a pressure of say 0.1 mm. and then more of the boron alkyl compound is admitted. This is repeated until the desired thickness of coating is obtained. With this procedure the amount of the boron compound required for a given coating is reduced.
These ionization chambers are useful for measuring fluxes of slow neutrons. For ionization chambers for the monitoring and control of piles a coating of about 1 mg. of boron per square centimeter is sufficient. The nuclear reaction involved is:
The range of alpha particles from the reaction corresponds to a slightly smaller thickness than this, and the slow neutron flux is reduced to the extent of about 4% per mg./sq. cm. of coating, with a consequent reduction in the ionization current produced.
It will be apparent that various forms of apparatus may be employed for coating surfaces by the method described.
I claim:
1. A method of coating surfaces which comprises maintaining the article to be coated at a temperature of about 550 C. in an evacuated chamber and passing one of a group consisting of trimethyl boron, triethyl boron and tripropyl boron in the vapour phase'and under reduced pressure into contact with the surface of the heated article to cause boron to be deposited thereon in a thin film.
2. A method as defined in claim 1 wherein said compound is admitted to the chamber intermittently.
3. A method as defined in claim 1 wherein said compound is continuously admitted to the chamber.
4. A method of coating surfaces of articles with REFERENCES CITED boron in a chamber which comprises evacuating the chamber, heating the article in the chamber The following references are of record in the to a temperature of about 550 C. and admitting file of this patent: to the chamber one of a group consisting of tri- 5 methyl boron, triethyl boron and tripropyl boron UNITED STATES PATENTS to a pressure of about one centimeter of mercury Number Name Date to contact the surfaces of the heated article and 597,172 WilmOWSkY 11, 1893 deposit boron thereon. 1,774,410 Van Arkel Aug. 26, 1930 GRAHAM ROBERT MARTIN. H 10 '2.303,658 Porter Dec. 1, 1942
US686453A 1946-01-15 1946-07-26 Method of coating surfaces with boron Expired - Lifetime US2484519A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2587036A (en) * 1946-03-12 1952-02-26 Bell Telephone Labor Inc Process and apparatus for semicontinuous plating
US2701216A (en) * 1949-04-06 1955-02-01 Int Standard Electric Corp Method of making surface-type and point-type rectifiers and crystalamplifier layers from elements
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3480467A (en) * 1966-03-30 1969-11-25 Us Navy Process for depositing boron carbide
US4470479A (en) * 1977-03-24 1984-09-11 Matsushita Electric Industrial Co., Ltd. Method of making metal coated foil speaker diaphragm

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US597172A (en) * 1898-01-11 Mowsky
US1774410A (en) * 1925-10-05 1930-08-26 Philips Nv Process of precipitating boron
US2303658A (en) * 1941-06-23 1942-12-01 Solvay Process Co Method of coating phenol reactors and the like

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US597172A (en) * 1898-01-11 Mowsky
US1774410A (en) * 1925-10-05 1930-08-26 Philips Nv Process of precipitating boron
US2303658A (en) * 1941-06-23 1942-12-01 Solvay Process Co Method of coating phenol reactors and the like

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2587036A (en) * 1946-03-12 1952-02-26 Bell Telephone Labor Inc Process and apparatus for semicontinuous plating
US2701216A (en) * 1949-04-06 1955-02-01 Int Standard Electric Corp Method of making surface-type and point-type rectifiers and crystalamplifier layers from elements
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3480467A (en) * 1966-03-30 1969-11-25 Us Navy Process for depositing boron carbide
US4470479A (en) * 1977-03-24 1984-09-11 Matsushita Electric Industrial Co., Ltd. Method of making metal coated foil speaker diaphragm

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