GB955700A - Process for the production of coatings of very pure silicon carbide free from bindingagents - Google Patents

Process for the production of coatings of very pure silicon carbide free from bindingagents

Info

Publication number
GB955700A
GB955700A GB25039/60A GB2503960A GB955700A GB 955700 A GB955700 A GB 955700A GB 25039/60 A GB25039/60 A GB 25039/60A GB 2503960 A GB2503960 A GB 2503960A GB 955700 A GB955700 A GB 955700A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicon carbide
coatings
organo
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25039/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB955700A publication Critical patent/GB955700A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

In a process for the deposition fo silicon carbide coatings a gaseous mixture consisting, by volume, of not more than 40% of one or more organo-silicon compounds and not less than 60% of a gaseous diluent is passed at a temperature of 1450-1600 DEG C., under a pressure of 0.1 - 100 atmospheres gauge and at a velocity of 0.01 - 500 cm./sec., calculated at 20 DEG C., in contact with the substrate(s) to be coated. Doped coatings may be deposited by using an organo-silicon compound which contains an element of Group II - VII of the Periodic Table bound to silicon and/or carbon, or by adding such an element in elementary or combined state to the gaseous mixture. Specified organo-silicon compounds are dimethyl and tetramethyl silane, methyl trichloro- and dimethyl dichloro-silane, and phenyltrichlorosilane. Specified diluents are hydrogen, nitrogen, carbon monoxide and rare gases. Specified substrates are carbon, graphite, silicon, boron, tantalum, titanium, tungsten, molybdenum, silicon carbide, boron carbide and titanium carbide. If desired, the coating may be built up in different layers by variation of the composition of the gas mixture. After coating, the substrate may be removed to produce a pure silicon carbide article. Specification 920,123 is referred to.
GB25039/60A 1959-07-17 1960-07-18 Process for the production of coatings of very pure silicon carbide free from bindingagents Expired GB955700A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW0026032 1959-07-17

Publications (1)

Publication Number Publication Date
GB955700A true GB955700A (en) 1964-04-15

Family

ID=7598229

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25039/60A Expired GB955700A (en) 1959-07-17 1960-07-18 Process for the production of coatings of very pure silicon carbide free from bindingagents

Country Status (3)

Country Link
BE (1) BE593059A (en)
DE (1) DE1302312B (en)
GB (1) GB955700A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340636A (en) * 1980-07-30 1982-07-20 Avco Corporation Coated stoichiometric silicon carbide
US4702960A (en) * 1980-07-30 1987-10-27 Avco Corporation Surface treatment for carbon and product

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467598A (en) * 1977-11-09 1979-05-31 Ngk Insulators Ltd Manufacture of silicon carbide powder and manufacture of silicon carbide sintered body using said powder
CA1121971A (en) * 1978-05-30 1982-04-20 Dow Corning Corporation Method for preparing silicon carbide
US4613490A (en) * 1984-05-08 1986-09-23 Mitsubishi Gas Chemical Company, Inc. Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof
JPH0521297Y2 (en) * 1986-07-31 1993-06-01
JPH03153876A (en) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd Silicon carbide member

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340636A (en) * 1980-07-30 1982-07-20 Avco Corporation Coated stoichiometric silicon carbide
US4702960A (en) * 1980-07-30 1987-10-27 Avco Corporation Surface treatment for carbon and product

Also Published As

Publication number Publication date
BE593059A (en) 1961-01-16
DE1302312B (en) 1972-03-09

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