GB1016578A - Improvements in or relating to processes for the production of high purity monocrystalline silicon - Google Patents

Improvements in or relating to processes for the production of high purity monocrystalline silicon

Info

Publication number
GB1016578A
GB1016578A GB31276/63A GB3127663A GB1016578A GB 1016578 A GB1016578 A GB 1016578A GB 31276/63 A GB31276/63 A GB 31276/63A GB 3127663 A GB3127663 A GB 3127663A GB 1016578 A GB1016578 A GB 1016578A
Authority
GB
United Kingdom
Prior art keywords
carrier
hydrogen halide
hcl
silicon
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31276/63A
Inventor
Erhard Sirtl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES66651A external-priority patent/DE1124028B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1016578A publication Critical patent/GB1016578A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Abstract

<PICT:1016578/C1/1> Monocrystalline Si is produced by initially passing a gas mixture of H2, hydrogen halide and a silicon-halogen compound, over a heated Si carrier and then reducing the proportion of hydrogen halide so that Si is deposited on the carrier. The initial gas mixture removes the oxide film and surface layers of Si from the carrier, thus exposing the undisturbed Si lattice. Sufficient hydrogen halide is maintained during deposition to prevent impurities, e.g. boron, being deposited. The carrier may also be pretreated with H2 or H2 + hydrogen halide. Si rod 2 is mounted between electrodes 13, e.g. of graphite, in quartz vessel 1, and heated by an electric current flowing through it to 1150 DEG C. H2 from 9 and HCl from 10 are passed through trap 23 to freeze out water vapour, and mixed with silicon-chlorine compound evaporating from 8. This cleaning mixture, containing up to 30% HCl with up to 5% SiHCl3 or 2% SiCl4, flows through vessel 1 at 50-100 1/h. The HCl feed is then reduced, the temperature of the carrier may be increased, and the flow of gas increased to 500 1/h. SiHBr3 or SiBr4 may also be used. Reference has been directed by the Comptroller to Specifications 809,280, 914,042 and 926,807.
GB31276/63A 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon Expired GB1016578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66651A DE1124028B (en) 1960-01-15 1960-01-15 Process for producing single crystal silicon

Publications (1)

Publication Number Publication Date
GB1016578A true GB1016578A (en) 1966-01-12

Family

ID=7498973

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1517/61A Expired GB926807A (en) 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method
GB31276/63A Expired GB1016578A (en) 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1517/61A Expired GB926807A (en) 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method

Country Status (4)

Country Link
US (1) US3239372A (en)
CH (1) CH426742A (en)
GB (2) GB926807A (en)
NL (3) NL260072A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
DE1444526B2 (en) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Method of depositing a semi-conductive element
US3862020A (en) * 1970-12-07 1975-01-21 Dow Corning Production method for polycrystalline semiconductor bodies
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
IN157312B (en) * 1982-01-12 1986-03-01 Rca Corp
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
JP2651146B2 (en) * 1987-03-02 1997-09-10 キヤノン株式会社 Crystal manufacturing method
ES2331283B1 (en) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) HIGH PURITY SILICON DEPOSIT REACTOR FOR PHOTOVOLTAIC APPLICATIONS.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (en) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Process for the production of the purest silicon
DE1054436B (en) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Process for the production of compact silicon of high purity

Also Published As

Publication number Publication date
NL260072A (en)
US3239372A (en) 1966-03-08
GB926807A (en) 1963-05-22
NL271203A (en)
NL131048C (en)
CH426742A (en) 1966-12-31

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