GB878765A - Improvements in and relating to processes for the manufacture of semiconductor materials - Google Patents

Improvements in and relating to processes for the manufacture of semiconductor materials

Info

Publication number
GB878765A
GB878765A GB3375856A GB3375856A GB878765A GB 878765 A GB878765 A GB 878765A GB 3375856 A GB3375856 A GB 3375856A GB 3375856 A GB3375856 A GB 3375856A GB 878765 A GB878765 A GB 878765A
Authority
GB
United Kingdom
Prior art keywords
relating
manufacture
processes
nov
semiconductor materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3375856A
Inventor
Frederick Claud Cowlard
Leighton George Penhale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB3375856A priority Critical patent/GB878765A/en
Priority to DEP19604A priority patent/DE1180353B/en
Priority to DEP19605A priority patent/DE1185592B/en
Publication of GB878765A publication Critical patent/GB878765A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

878,765. Semi-conductors. PLESSEY CO. Ltd. Nov. 5, 1957 [Nov. 5, 1956], No. 33758/56. Class 37. Doped semi-conductor material is prepared by supplying a gaseous hydride of the semiconductor element together with a desired proportion of a gaseous hydride of the impurity element, to a decomposition chamber for simultaneous decomposition. The Figure shows an example in which a controlled flow of monosilane is applied to a decomposition chamber 4 with either a controlled amount of borane if P-type silicon is desired, or of phosphine if N-type is desired. Excess hydrides and hydrogen are removed by exhaust means 12 and the doped silicon is obtained at 13. The desired proportion of impurity may be obtained by control of the partial pressures. Specifications 878,763 and 878,764 are referred to. Reference has been directed by the Comptroller to Specification 778,383.
GB3375856A 1956-11-05 1956-11-05 Improvements in and relating to processes for the manufacture of semiconductor materials Expired GB878765A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB3375856A GB878765A (en) 1956-11-05 1956-11-05 Improvements in and relating to processes for the manufacture of semiconductor materials
DEP19604A DE1180353B (en) 1956-11-05 1957-11-05 Process for producing crystalline silicon of the highest purity
DEP19605A DE1185592B (en) 1956-11-05 1957-11-05 Process for making doped crystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3375856A GB878765A (en) 1956-11-05 1956-11-05 Improvements in and relating to processes for the manufacture of semiconductor materials

Publications (1)

Publication Number Publication Date
GB878765A true GB878765A (en) 1961-10-04

Family

ID=10357061

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3375856A Expired GB878765A (en) 1956-11-05 1956-11-05 Improvements in and relating to processes for the manufacture of semiconductor materials

Country Status (2)

Country Link
DE (2) DE1185592B (en)
GB (1) GB878765A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2636348A1 (en) * 1976-08-12 1978-02-16 Wacker Chemitronic METHOD FOR MANUFACTURING PURE ELEMENTARY SEMICONDUCTOR MATERIAL

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE304857C (en) * 1913-10-16 1918-04-08
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances

Also Published As

Publication number Publication date
DE1185592B (en) 1965-01-21
DE1180353B (en) 1964-10-29

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