GB1056919A - Process for growing semiconductor crystals - Google Patents

Process for growing semiconductor crystals

Info

Publication number
GB1056919A
GB1056919A GB51325/64A GB5132564A GB1056919A GB 1056919 A GB1056919 A GB 1056919A GB 51325/64 A GB51325/64 A GB 51325/64A GB 5132564 A GB5132564 A GB 5132564A GB 1056919 A GB1056919 A GB 1056919A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
passing
germanium
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51325/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1056919A publication Critical patent/GB1056919A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Abstract

A process for epitaxially depositing germanium on a substrate comprises:- 1) passing a mixture of hydrogen or helium and a germanium halide, halogen or halogen acid into a first reactor containing Ge, and 2) passing the product of the first stage, mixed with hydrogen, into a second reaction chamber containing a germanium substrate. The reactor in step 1 is preferably packed with a bed of germanium at a temperature of 290 DEG - 450 DEG C. and the substrate in step 2 is preferably maintained at 500-920 DEG C. Gaseous doping agents may also be included in the feed mixture to give various kinds of semi-conductor structures.ALSO:A process for epitaxially depositing silicon on a substrate comprises: (1) passing a mixture of hydrogen or helium with a silicon halide, a halogen or a halogen acid into a first reaction chamber containing silicon (preferably a packed bed thereof at 700-980 DEG C.), and (2) passing the product of step 1 mixed with hydrogen into a second reaction chamber containing a silicon substrate (preferably at 1050-1250 DEG C.). Gaseous doping agents may be included in the feed mixture to give various kinds of semiconductor structures.
GB51325/64A 1963-12-31 1964-12-17 Process for growing semiconductor crystals Expired GB1056919A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US334859A US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals

Publications (1)

Publication Number Publication Date
GB1056919A true GB1056919A (en) 1967-02-01

Family

ID=23309173

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51325/64A Expired GB1056919A (en) 1963-12-31 1964-12-17 Process for growing semiconductor crystals

Country Status (5)

Country Link
US (1) US3297501A (en)
AT (1) AT261675B (en)
DE (1) DE1282613B (en)
FR (1) FR1419209A (en)
GB (1) GB1056919A (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1458474A1 (en) * 1963-12-21 1968-12-19 Siemens Ag Process for the preparation of intermetallic superconducting compounds
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1544259A1 (en) * 1965-02-05 1970-07-09 Siemens Ag Process for the production of uniform epitaxial growth layers
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
JPS6047202B2 (en) * 1976-01-13 1985-10-21 東北大学金属材料研究所長 Super hard high purity oriented polycrystalline silicon nitride
JPS55167041A (en) * 1979-06-14 1980-12-26 Toshiba Corp Vertical type gaseous phase growth device
JPS59156996A (en) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd Method and device for manufacturing crystalline film of compound
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
JPH02222134A (en) * 1989-02-23 1990-09-04 Nobuo Mikoshiba Thin film forming apparatus
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
CN102154628B (en) * 2004-08-02 2014-05-07 维高仪器股份有限公司 Multi-gas distribution injector for chemical vapor deposition reactors
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (en) * 1951-03-07 1900-01-01
US2767052A (en) * 1952-06-26 1956-10-16 Eagle Picher Co Recovery of germanium from scrap materials
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
DE1054436B (en) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Process for the production of compact silicon of high purity
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
US3068066A (en) * 1959-03-10 1962-12-11 Ciba Ltd Process for the manufacture of double salts of niobium chloride and tantalum chloride
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article

Also Published As

Publication number Publication date
US3297501A (en) 1967-01-10
FR1419209A (en) 1965-11-26
AT261675B (en) 1968-05-10
DE1282613B (en) 1968-11-14

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