GB1056919A - Process for growing semiconductor crystals - Google Patents
Process for growing semiconductor crystalsInfo
- Publication number
- GB1056919A GB1056919A GB51325/64A GB5132564A GB1056919A GB 1056919 A GB1056919 A GB 1056919A GB 51325/64 A GB51325/64 A GB 51325/64A GB 5132564 A GB5132564 A GB 5132564A GB 1056919 A GB1056919 A GB 1056919A
- Authority
- GB
- United Kingdom
- Prior art keywords
- hydrogen
- passing
- germanium
- substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A process for epitaxially depositing germanium on a substrate comprises:- 1) passing a mixture of hydrogen or helium and a germanium halide, halogen or halogen acid into a first reactor containing Ge, and 2) passing the product of the first stage, mixed with hydrogen, into a second reaction chamber containing a germanium substrate. The reactor in step 1 is preferably packed with a bed of germanium at a temperature of 290 DEG - 450 DEG C. and the substrate in step 2 is preferably maintained at 500-920 DEG C. Gaseous doping agents may also be included in the feed mixture to give various kinds of semi-conductor structures.ALSO:A process for epitaxially depositing silicon on a substrate comprises: (1) passing a mixture of hydrogen or helium with a silicon halide, a halogen or a halogen acid into a first reaction chamber containing silicon (preferably a packed bed thereof at 700-980 DEG C.), and (2) passing the product of step 1 mixed with hydrogen into a second reaction chamber containing a silicon substrate (preferably at 1050-1250 DEG C.). Gaseous doping agents may be included in the feed mixture to give various kinds of semiconductor structures.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US334859A US3297501A (en) | 1963-12-31 | 1963-12-31 | Process for epitaxial growth of semiconductor single crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1056919A true GB1056919A (en) | 1967-02-01 |
Family
ID=23309173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51325/64A Expired GB1056919A (en) | 1963-12-31 | 1964-12-17 | Process for growing semiconductor crystals |
Country Status (5)
Country | Link |
---|---|
US (1) | US3297501A (en) |
AT (1) | AT261675B (en) |
DE (1) | DE1282613B (en) |
FR (1) | FR1419209A (en) |
GB (1) | GB1056919A (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1458474A1 (en) * | 1963-12-21 | 1968-12-19 | Siemens Ag | Process for the preparation of intermetallic superconducting compounds |
US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
DE1544259A1 (en) * | 1965-02-05 | 1970-07-09 | Siemens Ag | Process for the production of uniform epitaxial growth layers |
US3338761A (en) * | 1965-03-31 | 1967-08-29 | Texas Instruments Inc | Method and apparatus for making compound materials |
US3635771A (en) * | 1968-05-21 | 1972-01-18 | Texas Instruments Inc | Method of depositing semiconductor material |
US3517643A (en) * | 1968-11-25 | 1970-06-30 | Sylvania Electric Prod | Vapor deposition apparatus including diffuser means |
US3865072A (en) * | 1973-10-18 | 1975-02-11 | Hls Ind | Apparatus for chemically depositing epitaxial layers on semiconductor substrates |
JPS6047202B2 (en) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | Super hard high purity oriented polycrystalline silicon nitride |
JPS55167041A (en) * | 1979-06-14 | 1980-12-26 | Toshiba Corp | Vertical type gaseous phase growth device |
JPS59156996A (en) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | Method and device for manufacturing crystalline film of compound |
US4949671A (en) * | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US4854266A (en) * | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
JPH02222134A (en) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | Thin film forming apparatus |
US6527865B1 (en) * | 1997-09-11 | 2003-03-04 | Applied Materials, Inc. | Temperature controlled gas feedthrough |
US20050098107A1 (en) * | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
US7112541B2 (en) * | 2004-05-06 | 2006-09-26 | Applied Materials, Inc. | In-situ oxide capping after CVD low k deposition |
CN102154628B (en) * | 2004-08-02 | 2014-05-07 | 维高仪器股份有限公司 | Multi-gas distribution injector for chemical vapor deposition reactors |
US7273823B2 (en) * | 2005-06-03 | 2007-09-25 | Applied Materials, Inc. | Situ oxide cap layer development |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (en) * | 1951-03-07 | 1900-01-01 | ||
US2767052A (en) * | 1952-06-26 | 1956-10-16 | Eagle Picher Co | Recovery of germanium from scrap materials |
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
DE1054436B (en) * | 1956-02-11 | 1959-04-09 | Pechiney Prod Chimiques Sa | Process for the production of compact silicon of high purity |
DE1048638B (en) * | 1957-07-02 | 1959-01-15 | Siemens &. Halske Aktiengesellschaft, Berlin und München | Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction |
US3020129A (en) * | 1958-07-25 | 1962-02-06 | Gen Electric | Production of silicon of improved purity |
US3068066A (en) * | 1959-03-10 | 1962-12-11 | Ciba Ltd | Process for the manufacture of double salts of niobium chloride and tantalum chloride |
US3009834A (en) * | 1959-10-29 | 1961-11-21 | Jacques M Hanlet | Process of forming an electroluminescent article and the resulting article |
-
1963
- 1963-12-31 US US334859A patent/US3297501A/en not_active Expired - Lifetime
-
1964
- 1964-12-17 GB GB51325/64A patent/GB1056919A/en not_active Expired
- 1964-12-24 DE DEJ27224A patent/DE1282613B/en active Pending
- 1964-12-28 AT AT1097264A patent/AT261675B/en active
- 1964-12-29 FR FR165A patent/FR1419209A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1419209A (en) | 1965-11-26 |
US3297501A (en) | 1967-01-10 |
DE1282613B (en) | 1968-11-14 |
AT261675B (en) | 1968-05-10 |
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