GB1002528A - Manufacture of semiconductive bodies - Google Patents

Manufacture of semiconductive bodies

Info

Publication number
GB1002528A
GB1002528A GB47382/63A GB4738263A GB1002528A GB 1002528 A GB1002528 A GB 1002528A GB 47382/63 A GB47382/63 A GB 47382/63A GB 4738263 A GB4738263 A GB 4738263A GB 1002528 A GB1002528 A GB 1002528A
Authority
GB
United Kingdom
Prior art keywords
cadmium
source
gaas
semi
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47382/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1002528A publication Critical patent/GB1002528A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,002,528. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 2, 1963 [Dec. 31, 1962], No. 47382/63. Heading H1K. A method of producing a smooth-surfaced epitazial deposit of semi-conductive material on a substrate comprises reacting a halogen transport element with a source of both semi-conductive material and cadmium and decomposing the vapour so formed on to a heated substrate, the deposit having a cadmium concentration of the order of the limit of solubility for cadmium in the semi-conductive deposit. As shown, an N-type gallium arsenide (GaAs) wafer 6 is placed in a sealed quartz reaction tube 1 together with a source 3 of GaAs, a source 4 of iodine or other halogen, and a source 5 of cadmium. The materials of sources 3, 4 and 5 are heated by coil 2a, whilst wafer 6, which may be masked, is heated by coil 2b. The iodine reacts with the sources of GaAs and cadmium and forms a vapour 8 which decomposes on the wafer 6 to produce an epitaxial deposit 7 of P-type GaAs. A Group II element such as zinc may be included in the GaAs source 3 or the cadmium source 5 to produce greater impurity concentrations in the deposited layer. An " open tube system of vapour deposition may also be used. The substrate may also be of P-type material.
GB47382/63A 1962-12-31 1963-12-02 Manufacture of semiconductive bodies Expired GB1002528A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US248520A US3179541A (en) 1962-12-31 1962-12-31 Vapor growth with smooth surfaces by introducing cadmium into the semiconductor material

Publications (1)

Publication Number Publication Date
GB1002528A true GB1002528A (en) 1965-08-25

Family

ID=22939512

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47382/63A Expired GB1002528A (en) 1962-12-31 1963-12-02 Manufacture of semiconductive bodies

Country Status (4)

Country Link
US (1) US3179541A (en)
DE (1) DE1240826B (en)
FR (1) FR1378629A (en)
GB (1) GB1002528A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3303067A (en) * 1963-12-26 1967-02-07 Ibm Method of fabricating thin film transistor devices
US3377209A (en) * 1964-05-01 1968-04-09 Ca Nat Research Council Method of making p-n junctions by hydrothermally growing
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
NL252531A (en) * 1959-06-30 1900-01-01
NL254846A (en) * 1959-08-29
DE1161036B (en) * 1960-03-21 1964-01-09 Texas Instruments Inc Process for the production of highly doped AB semiconductor compounds

Also Published As

Publication number Publication date
DE1240826B (en) 1967-05-24
US3179541A (en) 1965-04-20
FR1378629A (en) 1964-11-13

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