GB949799A - Process for the production of crystalline semi-conductor material - Google Patents
Process for the production of crystalline semi-conductor materialInfo
- Publication number
- GB949799A GB949799A GB11828/61A GB1182861A GB949799A GB 949799 A GB949799 A GB 949799A GB 11828/61 A GB11828/61 A GB 11828/61A GB 1182861 A GB1182861 A GB 1182861A GB 949799 A GB949799 A GB 949799A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor material
- semi
- production
- deposition
- pure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Crystalline semi-conductor material is produced by epitaxial deposition of one semiconductor material on to a dendritic crystal of the same or different semi-conductor material. The deposited material is obtained from a gas by chemical reaction. The dendritic material may be pure or doped material and one or more pure or doped layers of the same or different conductivity types may be deposited if desired by using successive furnaces and reaction chambers. Deposition may be effected by the process described in Specification 914,042 in which some of the carrier crystal is first removed before deposition commences. The semi-conductor material may consist of germanium, silicon or gallium arsenide. The invention may be applied to the production of solid body micro circuits incorporating different circuit elements in one body. Specification 861,135 also is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES67895A DE1197058B (en) | 1960-04-02 | 1960-04-02 | Process for the production of single-crystal, flat semiconductor bodies |
Publications (1)
Publication Number | Publication Date |
---|---|
GB949799A true GB949799A (en) | 1964-02-19 |
Family
ID=7499892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB11828/61A Expired GB949799A (en) | 1960-04-02 | 1961-03-30 | Process for the production of crystalline semi-conductor material |
Country Status (6)
Country | Link |
---|---|
US (1) | US3341376A (en) |
BE (1) | BE601988A (en) |
CH (1) | CH425738A (en) |
DE (1) | DE1197058B (en) |
GB (1) | GB949799A (en) |
NL (1) | NL262949A (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB524765I5 (en) * | 1966-02-03 | 1900-01-01 | ||
US3493811A (en) * | 1966-06-22 | 1970-02-03 | Hewlett Packard Co | Epitaxial semiconductor material on dissimilar substrate and method for producing the same |
US3441453A (en) * | 1966-12-21 | 1969-04-29 | Texas Instruments Inc | Method for making graded composition mixed compound semiconductor materials |
US3473974A (en) * | 1967-02-14 | 1969-10-21 | Westinghouse Electric Corp | Utilization of trace impurities in the vapor growth of crystals |
US3473978A (en) * | 1967-04-24 | 1969-10-21 | Motorola Inc | Epitaxial growth of germanium |
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
US3635683A (en) * | 1968-06-05 | 1972-01-18 | Texas Instruments Inc | Method of crystal growth by vapor deposition |
US3907607A (en) * | 1969-07-14 | 1975-09-23 | Corning Glass Works | Continuous processing of ribbon material |
FR2133498B1 (en) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
JPS4834798A (en) * | 1971-09-06 | 1973-05-22 | ||
US3935040A (en) * | 1971-10-20 | 1976-01-27 | Harris Corporation | Process for forming monolithic semiconductor display |
US3984857A (en) * | 1973-06-13 | 1976-10-05 | Harris Corporation | Heteroepitaxial displays |
US3985590A (en) * | 1973-06-13 | 1976-10-12 | Harris Corporation | Process for forming heteroepitaxial structure |
US5328549A (en) * | 1980-04-10 | 1994-07-12 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US5217564A (en) * | 1980-04-10 | 1993-06-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US5273616A (en) * | 1980-04-10 | 1993-12-28 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US5362682A (en) * | 1980-04-10 | 1994-11-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US5588994A (en) * | 1980-04-10 | 1996-12-31 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
DE3176676D1 (en) * | 1980-04-10 | 1988-04-07 | Massachusetts Inst Technology | Methods of producing sheets of crystalline material and devices amde therefrom |
US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
US4419178A (en) * | 1981-06-19 | 1983-12-06 | Rode Daniel L | Continuous ribbon epitaxy |
US4863760A (en) * | 1987-12-04 | 1989-09-05 | Hewlett-Packard Company | High speed chemical vapor deposition process utilizing a reactor having a fiber coating liquid seal and a gas sea; |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA649733A (en) * | 1962-10-02 | L. Longini Richard | Treatment of semiconductor materials | |
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
NL130620C (en) * | 1954-05-18 | 1900-01-01 | ||
DE1017795B (en) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Process for the production of the purest crystalline substances, preferably semiconductor substances |
US2759848A (en) * | 1954-12-28 | 1956-08-21 | Bell Telephone Labor Inc | Deposition of metal films from carbonyls |
US2970068A (en) * | 1955-03-07 | 1961-01-31 | Union Carbide Corp | Method of making a composite stock |
US3030189A (en) * | 1958-05-19 | 1962-04-17 | Siemens Ag | Methods of producing substances of highest purity, particularly electric semiconductors |
US2995470A (en) * | 1958-07-16 | 1961-08-08 | Robbart Edward | Method and apparatus for treating continuous lengths of material with gaseous compositions |
NL241834A (en) * | 1958-08-28 | 1900-01-01 | ||
US3206406A (en) * | 1960-05-09 | 1965-09-14 | Merck & Co Inc | Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals |
US3152022A (en) * | 1962-05-25 | 1964-10-06 | Bell Telephone Labor Inc | Epitaxial deposition on the surface of a freshly grown dendrite |
-
0
- NL NL262949D patent/NL262949A/xx unknown
-
1960
- 1960-04-02 DE DES67895A patent/DE1197058B/en active Pending
-
1961
- 1961-03-29 BE BE601988A patent/BE601988A/en unknown
- 1961-03-30 GB GB11828/61A patent/GB949799A/en not_active Expired
- 1961-03-30 CH CH378461A patent/CH425738A/en unknown
-
1965
- 1965-12-13 US US523486A patent/US3341376A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3341376A (en) | 1967-09-12 |
BE601988A (en) | 1961-09-29 |
NL262949A (en) | 1900-01-01 |
CH425738A (en) | 1966-12-15 |
DE1197058B (en) | 1965-07-22 |
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