GB1070288A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1070288A
GB1070288A GB2477464A GB2477464A GB1070288A GB 1070288 A GB1070288 A GB 1070288A GB 2477464 A GB2477464 A GB 2477464A GB 2477464 A GB2477464 A GB 2477464A GB 1070288 A GB1070288 A GB 1070288A
Authority
GB
United Kingdom
Prior art keywords
silicon
intersect
transistors
wafer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2477464A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1070288A publication Critical patent/GB1070288A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

1,070,288. Transistors. RADIO CORPORATION OF AMERICA. June 15, 1964 [July 8, 1963], No. 24774/64. Heading H1K. The invention relates to transistors in which both emitter and collector junctions come to the upper surface of the wafer and are there protected by an insulating film, for example of magnesium fluoride, magnesium chloride, or silicon oxide. Silicon oxide films are conveniently, formed by spraying on to the wafer the thermal decomposition products of a siloxane. Suitable semi-conductors are silicon, germanium, and silicon-germanium alloys. The intersect of one of the two junctions with the surface is covered by a metallic layer lying on the insulating film and forming an extension of a main electrode. A similar extension of another main electrode may cover the intersect of the other junction with the surface. To form the electrodes, holes are formed in the insulating layer and aluminium (for example) is deposited either selectively or overall, in the latter case unwanted metal being removed by grinding, lapping, or etching.
GB2477464A 1963-07-08 1964-06-15 Semiconductor devices Expired GB1070288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29340663A 1963-07-08 1963-07-08

Publications (1)

Publication Number Publication Date
GB1070288A true GB1070288A (en) 1967-06-01

Family

ID=23128953

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2477464A Expired GB1070288A (en) 1963-07-08 1964-06-15 Semiconductor devices

Country Status (7)

Country Link
JP (1) JPS4841074B1 (en)
BR (1) BR6460534D0 (en)
DE (1) DE1489247B1 (en)
ES (1) ES301778A1 (en)
GB (1) GB1070288A (en)
NL (1) NL6407694A (en)
SE (1) SE316530B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137478A (en) * 1974-04-18 1975-10-31

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL204955A (en) * 1956-02-28
US2890395A (en) * 1957-10-31 1959-06-09 Jay W Lathrop Semiconductor construction
US2989669A (en) * 1959-01-27 1961-06-20 Jay W Lathrop Miniature hermetically sealed semiconductor construction
FR1262176A (en) * 1959-07-30 1961-05-26 Fairchild Semiconductor Semiconductor and conductor device
NL254726A (en) * 1959-08-11
NL274830A (en) * 1961-04-12
FR1316061A (en) * 1961-04-12 1963-01-25 Fairchild Camera Instr Co Semiconductor with regulated surface potential

Also Published As

Publication number Publication date
DE1489247B1 (en) 1970-07-23
JPS4841074B1 (en) 1973-12-04
NL6407694A (en) 1965-01-11
BR6460534D0 (en) 1973-05-15
ES301778A1 (en) 1965-01-01
SE316530B (en) 1969-10-27

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