FR1262176A - Semiconductor and conductor device - Google Patents

Semiconductor and conductor device

Info

Publication number
FR1262176A
FR1262176A FR831640A FR831640A FR1262176A FR 1262176 A FR1262176 A FR 1262176A FR 831640 A FR831640 A FR 831640A FR 831640 A FR831640 A FR 831640A FR 1262176 A FR1262176 A FR 1262176A
Authority
FR
France
Prior art keywords
semiconductor
conductor device
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR831640A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US830507A external-priority patent/US2981877A/en
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Priority to FR831640A priority Critical patent/FR1262176A/en
Application granted granted Critical
Publication of FR1262176A publication Critical patent/FR1262176A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
FR831640A 1959-07-30 1960-06-30 Semiconductor and conductor device Expired FR1262176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR831640A FR1262176A (en) 1959-07-30 1960-06-30 Semiconductor and conductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US830507A US2981877A (en) 1959-07-30 1959-07-30 Semiconductor device-and-lead structure
FR831640A FR1262176A (en) 1959-07-30 1960-06-30 Semiconductor and conductor device

Publications (1)

Publication Number Publication Date
FR1262176A true FR1262176A (en) 1961-05-26

Family

ID=26186616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR831640A Expired FR1262176A (en) 1959-07-30 1960-06-30 Semiconductor and conductor device

Country Status (1)

Country Link
FR (1) FR1262176A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208407B (en) * 1961-12-27 1966-01-05 Ass Elect Ind Process for the manufacture of semiconductor components
DE1228003B (en) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter High breakdown voltage transistor with high emitter yield
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
DE1282196B (en) * 1963-12-17 1968-11-07 Western Electric Co Semiconductor component with a protection device for its pn transitions
DE1293904B (en) * 1961-07-15 1969-04-30 Telefunken Patent Method for contacting the alloy electrodes of semiconductor devices
DE1489247B1 (en) * 1963-07-08 1970-07-23 Rca Corp Semiconductor component with a disk-shaped semiconductor body
DE1489031B1 (en) * 1963-11-08 1972-01-05 Ibm Transistor having a wafer-shaped semiconductor body and method for its manufacture

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293904B (en) * 1961-07-15 1969-04-30 Telefunken Patent Method for contacting the alloy electrodes of semiconductor devices
DE1208407B (en) * 1961-12-27 1966-01-05 Ass Elect Ind Process for the manufacture of semiconductor components
DE1228003B (en) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter High breakdown voltage transistor with high emitter yield
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
DE1259469B (en) * 1963-05-24 1968-01-25 Ibm Process for the production of inversion layer-free semiconductor junctions
DE1489247B1 (en) * 1963-07-08 1970-07-23 Rca Corp Semiconductor component with a disk-shaped semiconductor body
DE1489031B1 (en) * 1963-11-08 1972-01-05 Ibm Transistor having a wafer-shaped semiconductor body and method for its manufacture
DE1282196B (en) * 1963-12-17 1968-11-07 Western Electric Co Semiconductor component with a protection device for its pn transitions

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