GB992975A - Improvements in and relating to semi-conductor devices - Google Patents
Improvements in and relating to semi-conductor devicesInfo
- Publication number
- GB992975A GB992975A GB8816/62A GB881662A GB992975A GB 992975 A GB992975 A GB 992975A GB 8816/62 A GB8816/62 A GB 8816/62A GB 881662 A GB881662 A GB 881662A GB 992975 A GB992975 A GB 992975A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- semi
- area
- areas
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
992,975. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS-G.m.b.H. March 7, 1962, No. 8816/62. Heading H1K. An ohmic contact to a precise area of a semiconductor body is provided by completely covering the body, apart from the area concerned, with a protection layer and then soldering a conductor to the area. In one example a silicon wafer is heated in water vapour 15 to provide an oxide coating which is then partially removed by etching areas not protected by a wax coating. These areas are coated with the soldering material which is alloyed to the semi-conductor body and the conductor either in separate steps or in one operation. The solder may consist of goldantimony or aluminium and the conductor of copper. Germanium may be used in place of silicon and a plurality of contacts may be soldered simultaneously. The invention may be used in thermo-electric applications.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8816/62A GB992975A (en) | 1962-03-07 | 1962-03-07 | Improvements in and relating to semi-conductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8816/62A GB992975A (en) | 1962-03-07 | 1962-03-07 | Improvements in and relating to semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB992975A true GB992975A (en) | 1965-05-26 |
Family
ID=9859777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8816/62A Expired GB992975A (en) | 1962-03-07 | 1962-03-07 | Improvements in and relating to semi-conductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB992975A (en) |
-
1962
- 1962-03-07 GB GB8816/62A patent/GB992975A/en not_active Expired
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