GB1232126A - - Google Patents
Info
- Publication number
- GB1232126A GB1232126A GB1232126DA GB1232126A GB 1232126 A GB1232126 A GB 1232126A GB 1232126D A GB1232126D A GB 1232126DA GB 1232126 A GB1232126 A GB 1232126A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- platinum
- metal
- providing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
1,232,126. Semi-conductor devices. RCA CORPORATION. 16 Sept., 1969 [23 Dec., 1968], No. 45588/69. Heading H1K. A method of providing electrodes on a semiconductor wafer 10 comprises providing a first, metal, layer 16 which contacts the wafer surface where required through apertures in an insulating surface layer 12, then providing a second, platinum, layer 36 over the first layer, and coating this second layer with a third, metal, layer, providing apertures in the third layer by masking and etching to expose portions of the platinum layer and etching the exposed platinum away using an etchant which does not attack the metals of the first and third layers. The third layer is then removed over the remaining platinum portions 36 by etching, the first layer being protected meanwhile by an insulating layer 40, and a good conducting metal 20 such as gold, silver or copper is electrolytically plated on these remaining portions 36 to complete the electrodes. Finally the insulating layer 40 is removed and parts of the metal layer 16 are etched away to separate the electrodes from one another. The metals used for the first and third layers may be titanium, tantalum, or rhodium, and the semi-conductor is silicon or gallium arsenide. The compositions of the chemical etchants used in the process are given.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78621868A | 1968-12-23 | 1968-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1232126A true GB1232126A (en) | 1971-05-19 |
Family
ID=25137939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1232126D Expired GB1232126A (en) | 1968-12-23 | 1969-09-16 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4842023B1 (en) |
DE (1) | DE1947026B2 (en) |
FR (1) | FR2026831A1 (en) |
GB (1) | GB1232126A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3700569A (en) * | 1971-09-10 | 1972-10-24 | Bell Telephone Labor Inc | Method of metallizing devices |
JPS5174735U (en) * | 1974-12-06 | 1976-06-11 | ||
CH648692A5 (en) * | 1979-09-05 | 1985-03-29 | Bbc Brown Boveri & Cie | Contact arrangement on a semiconductor component |
EP0312965B1 (en) * | 1987-10-23 | 1992-12-30 | Siemens Aktiengesellschaft | Method of producing a planar self-aligned heterojunction bipolar transistor |
-
1969
- 1969-09-16 GB GB1232126D patent/GB1232126A/en not_active Expired
- 1969-09-17 DE DE19691947026 patent/DE1947026B2/en active Pending
- 1969-09-18 FR FR6931755A patent/FR2026831A1/fr not_active Withdrawn
- 1969-09-22 JP JP7575069A patent/JPS4842023B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1947026B2 (en) | 1973-12-20 |
FR2026831A1 (en) | 1970-09-25 |
JPS4842023B1 (en) | 1973-12-10 |
DE1947026A1 (en) | 1971-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1240189A (en) | Method and structure in forming electrically continuous circuit through insulating layer | |
US3586922A (en) | Multiple-layer metal structure and processing | |
US3560358A (en) | Electrolytic etching of platinum for metallization | |
US3341753A (en) | Metallic contacts for semiconductor devices | |
GB1243247A (en) | Ohmic contact and electrical interconnection system for electronic devices | |
JPS6064431A (en) | Method of etching refractory metal film on semiconductor structure | |
GB1318770A (en) | Methods of etching semiconductor bodies | |
GB1232126A (en) | ||
US3490943A (en) | Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods | |
GB1143506A (en) | Method of producing semiconductor devices having connecting leads attached thereto | |
US4322264A (en) | Method for selective etching of titaniumdioxide relative to aluminum | |
US3368124A (en) | Semiconductor devices | |
US4082604A (en) | Semiconductor process | |
US3639186A (en) | Process for the production of finely etched patterns | |
US3699010A (en) | Beam lead plating process | |
GB1348731A (en) | Interconnection of electrical devices | |
GB1269130A (en) | Improvements relating to ohmic contacts for semiconductor devices | |
US3714521A (en) | Semiconductor device or monolithic integrated circuit with tungsten interconnections | |
US3847690A (en) | Method of protecting against electrochemical effects during metal etching | |
US3280382A (en) | Semiconductor diode comprising caustic-resistant surface coating | |
JPS5491087A (en) | Manufacture of thin-film solar cell | |
GB8515479D0 (en) | Providing electrical connections to planar semiconductor devices | |
GB1244759A (en) | Improvements in and relating to methods of manufacturing semiconductor devices | |
US3716428A (en) | Method of etching a metal which can be passivated | |
GB1416650A (en) | Method of depositing electrode leads |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |