ES301778A1 - A semiconductor device. (Machine-translation by Google Translate, not legally binding) - Google Patents

A semiconductor device. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES301778A1
ES301778A1 ES0301778A ES301778A ES301778A1 ES 301778 A1 ES301778 A1 ES 301778A1 ES 0301778 A ES0301778 A ES 0301778A ES 301778 A ES301778 A ES 301778A ES 301778 A1 ES301778 A1 ES 301778A1
Authority
ES
Spain
Prior art keywords
wafer
translation
machine
semiconductor device
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0301778A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES301778A1 publication Critical patent/ES301778A1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A semiconductor device consisting of: a wafer of crystalline semiconductor material provided with a rectifying barrier that intercepts the surface of the wafer; a dielectric film on a portion of said surface of the wafer and covering said surface intercept of said barrier; a metal electrode in contact with said wafer surface; and a metal cover extending over a portion of said dielectric film and resting on the entire surface interceptor of the wafer of said barrier. (Machine-translation by Google Translate, not legally binding)
ES0301778A 1963-07-08 1964-07-07 A semiconductor device. (Machine-translation by Google Translate, not legally binding) Expired ES301778A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29340663A 1963-07-08 1963-07-08

Publications (1)

Publication Number Publication Date
ES301778A1 true ES301778A1 (en) 1965-01-01

Family

ID=23128953

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0301778A Expired ES301778A1 (en) 1963-07-08 1964-07-07 A semiconductor device. (Machine-translation by Google Translate, not legally binding)

Country Status (7)

Country Link
JP (1) JPS4841074B1 (en)
BR (1) BR6460534D0 (en)
DE (1) DE1489247B1 (en)
ES (1) ES301778A1 (en)
GB (1) GB1070288A (en)
NL (1) NL6407694A (en)
SE (1) SE316530B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137478A (en) * 1974-04-18 1975-10-31

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE555335A (en) * 1956-02-28
US2890395A (en) * 1957-10-31 1959-06-09 Jay W Lathrop Semiconductor construction
US2989669A (en) * 1959-01-27 1961-06-20 Jay W Lathrop Miniature hermetically sealed semiconductor construction
FR1262176A (en) * 1959-07-30 1961-05-26 Fairchild Semiconductor Semiconductor and conductor device
NL131156C (en) * 1959-08-11
NL274830A (en) * 1961-04-12
FR1316061A (en) * 1961-04-12 1963-01-25 Fairchild Camera Instr Co Semiconductor with regulated surface potential

Also Published As

Publication number Publication date
DE1489247B1 (en) 1970-07-23
SE316530B (en) 1969-10-27
BR6460534D0 (en) 1973-05-15
JPS4841074B1 (en) 1973-12-04
NL6407694A (en) 1965-01-11
GB1070288A (en) 1967-06-01

Similar Documents

Publication Publication Date Title
ES326632A1 (en) A semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES307516A1 (en) Method of protection of a pn unión that separates two semiconductors of opposite conductivities. (Machine-translation by Google Translate, not legally binding)
ES310007A1 (en) A device of solid state field effect. (Machine-translation by Google Translate, not legally binding)
ES321208A1 (en) A method of producing a semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES309288A3 (en) A solid state electrical device. (Machine-translation by Google Translate, not legally binding)
ES328172A1 (en) A composite semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES315030A1 (en) A semiconductor device of field effect of isolated portal. (Machine-translation by Google Translate, not legally binding)
ES325504A1 (en) A semiconductor device of door field effect isolated. (Machine-translation by Google Translate, not legally binding)
CA845885A (en) Semiconductor switching device
GB710245A (en) Contact device
ES330535A1 (en) An effect gunn device. (Machine-translation by Google Translate, not legally binding)
ES301778A1 (en) A semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES273893A1 (en) Semiconductor device
ES360290A1 (en) Improvements in the construction of semiconductor devices. (Machine-translation by Google Translate, not legally binding)
ES374056A1 (en) Barrier layer devices and methods for their manufacture
ES321146A1 (en) A semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES246605A1 (en) Semi-conductive device and method of making
ES329228A1 (en) A transistor device. (Machine-translation by Google Translate, not legally binding)
CA657345A (en) Semi-conductor switching device
ES226670A1 (en) A semiconductor switching device (Machine-translation by Google Translate, not legally binding)
ES364326A1 (en) A rectifier contact device for a semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES312269A1 (en) A semiconductor device. (Machine-translation by Google Translate, not legally binding)
ES391827A1 (en) A controlled semiconductor rectifier device. (Machine-translation by Google Translate, not legally binding)
ES451614A1 (en) Semiconductor device
ES328500A1 (en) Procedure for semiconductor metalization. (Machine-translation by Google Translate, not legally binding)