GB1176691A - High Resistivity Compounds and Alloys and Methods of Making Same. - Google Patents

High Resistivity Compounds and Alloys and Methods of Making Same.

Info

Publication number
GB1176691A
GB1176691A GB80/67A GB8067A GB1176691A GB 1176691 A GB1176691 A GB 1176691A GB 80/67 A GB80/67 A GB 80/67A GB 8067 A GB8067 A GB 8067A GB 1176691 A GB1176691 A GB 1176691A
Authority
GB
United Kingdom
Prior art keywords
semi
gaas
produced
iron
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB80/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1176691A publication Critical patent/GB1176691A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1,176,691. Semi-conductor devices &c. TEXAS INSTRUMENTS Inc. 2 Jan., 1967 [2 Feb., 1966], No. 80/67. Heading H1K. [Also in Division C1] Composite structures of alternate layers of semi-insulating and low resistivity semi-conducting material are produced using an irondoped III-V material as the semi-conducting material. Various networks within a single wafer of monocrystalline material can be formed by epitaxial deposition on an appropriate substrate. The semi-insulating material is formed by reacting a gaseous mixture including hydrogen, at least one Group V element or a volatile compound of a Group V element and at least one Group III element or volatile compound of a Group III element in a reaction chamber in which iron arsenide also is present, as a gas, during the formation of the deposit of the Group III-V material. The method, apart from the iron doping, is conventional. In one example, iron arsenide is produced by a prearseniding treatment and is then used as dopant in the deposition of GaAs on a monocrystalline GaAs wafer. The layer produced was P-type with a resistivity of 10<SP>5</SP> ohm cm. A second layer may be produced, omitting the dopant, to give a monocrystalline wafer having two layers of low resistivity GaAs contiguous with but separated by a layer of semi-insulating GaAs. Layers of iron-doped Ga(As, P) ranging from GaAs 0 . 98 P 0À02 to GaAs 0À3 P 0À7 are also obtained. Other III-V compounds such as arsenides, phosphides and antimonides of aluminium, gallium and indium are also referred to. Other substrates mentioned are germanium, silicon, and II-VI compounds.
GB80/67A 1966-02-02 1967-01-02 High Resistivity Compounds and Alloys and Methods of Making Same. Expired GB1176691A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52453866A 1966-02-02 1966-02-02

Publications (1)

Publication Number Publication Date
GB1176691A true GB1176691A (en) 1970-01-07

Family

ID=24089646

Family Applications (1)

Application Number Title Priority Date Filing Date
GB80/67A Expired GB1176691A (en) 1966-02-02 1967-01-02 High Resistivity Compounds and Alloys and Methods of Making Same.

Country Status (5)

Country Link
US (1) US3421952A (en)
FR (1) FR1509713A (en)
GB (1) GB1176691A (en)
NL (1) NL6701280A (en)
SE (1) SE311012B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
GB2248456A (en) * 1990-09-12 1992-04-08 Philips Electronic Associated A method of growing III-V compound semiconductor material on a substrate
CN107268085A (en) * 2017-08-01 2017-10-20 江西德义半导体科技有限公司 The preparation method and device of a kind of semi-insulating GaAs polycrystalline carbon dope

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit
US3494743A (en) * 1967-11-01 1970-02-10 Atomic Energy Commission Vapor phase reactor for producing multicomponent compounds
JPS4831021B1 (en) * 1968-09-14 1973-09-26
US4007074A (en) * 1970-01-09 1977-02-08 Hitachi, Ltd. Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor
BE752487A (en) * 1970-06-24 1970-12-01 Cockerill PROCESS FOR MANUFACTURING A WELDING WIRE AND OBTAINED WIRE,
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
US3855613A (en) * 1973-06-22 1974-12-17 Rca Corp A solid state switch using an improved junction field effect transistor
FR2320774A1 (en) * 1974-01-10 1977-03-11 Radiotechnique Compelec METHOD AND DEVICE FOR DEPOSIT OF DOPE MATERIAL
US4062706A (en) * 1976-04-12 1977-12-13 Robert Arthur Ruehrwein Process for III-V compound epitaxial crystals utilizing inert carrier gas
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
CA1210526A (en) * 1983-10-21 1986-08-26 Judith A. Long Device having semi-insulating indium phosphides based compositions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
NL252729A (en) * 1959-06-18
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3277006A (en) * 1962-06-28 1966-10-04 Texas Instruments Inc Double doping of iii-v compound semiconductor material
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
NL295293A (en) * 1962-07-13
NL295918A (en) * 1962-07-31
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
DE3525397A1 (en) * 1984-07-16 1986-02-20 Yoshihiro Sendai Miyagi Kokubun METHOD FOR PRODUCING GAAS SINGLE CRYSTALS
GB2248456A (en) * 1990-09-12 1992-04-08 Philips Electronic Associated A method of growing III-V compound semiconductor material on a substrate
CN107268085A (en) * 2017-08-01 2017-10-20 江西德义半导体科技有限公司 The preparation method and device of a kind of semi-insulating GaAs polycrystalline carbon dope

Also Published As

Publication number Publication date
NL6701280A (en) 1967-08-03
US3421952A (en) 1969-01-14
FR1509713A (en) 1968-01-12
SE311012B (en) 1969-05-27

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