FR1509713A - Manufacturing process for high resistivity compounds and alloys - Google Patents

Manufacturing process for high resistivity compounds and alloys

Info

Publication number
FR1509713A
FR1509713A FR93148A FR93148A FR1509713A FR 1509713 A FR1509713 A FR 1509713A FR 93148 A FR93148 A FR 93148A FR 93148 A FR93148 A FR 93148A FR 1509713 A FR1509713 A FR 1509713A
Authority
FR
France
Prior art keywords
alloys
manufacturing process
high resistivity
compounds
resistivity compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR93148A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of FR1509713A publication Critical patent/FR1509713A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
FR93148A 1966-02-02 1967-01-31 Manufacturing process for high resistivity compounds and alloys Expired FR1509713A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52453866A 1966-02-02 1966-02-02

Publications (1)

Publication Number Publication Date
FR1509713A true FR1509713A (en) 1968-01-12

Family

ID=24089646

Family Applications (1)

Application Number Title Priority Date Filing Date
FR93148A Expired FR1509713A (en) 1966-02-02 1967-01-31 Manufacturing process for high resistivity compounds and alloys

Country Status (5)

Country Link
US (1) US3421952A (en)
FR (1) FR1509713A (en)
GB (1) GB1176691A (en)
NL (1) NL6701280A (en)
SE (1) SE311012B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit
US3494743A (en) * 1967-11-01 1970-02-10 Atomic Energy Commission Vapor phase reactor for producing multicomponent compounds
JPS4831021B1 (en) * 1968-09-14 1973-09-26
NL7100218A (en) * 1970-01-09 1971-07-13
BE752487A (en) * 1970-06-24 1970-12-01 Cockerill PROCESS FOR MANUFACTURING A WELDING WIRE AND OBTAINED WIRE,
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
US3855613A (en) * 1973-06-22 1974-12-17 Rca Corp A solid state switch using an improved junction field effect transistor
FR2320774A1 (en) * 1974-01-10 1977-03-11 Radiotechnique Compelec METHOD AND DEVICE FOR DEPOSIT OF DOPE MATERIAL
US4062706A (en) * 1976-04-12 1977-12-13 Robert Arthur Ruehrwein Process for III-V compound epitaxial crystals utilizing inert carrier gas
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
CA1210526A (en) * 1983-10-21 1986-08-26 Judith A. Long Device having semi-insulating indium phosphides based compositions
JPH0630339B2 (en) * 1984-07-16 1994-04-20 新技術事業団 Method for producing GaAs single crystal
GB2248456A (en) * 1990-09-12 1992-04-08 Philips Electronic Associated A method of growing III-V compound semiconductor material on a substrate
CN107268085A (en) * 2017-08-01 2017-10-20 江西德义半导体科技有限公司 The preparation method and device of a kind of semi-insulating GaAs polycrystalline carbon dope

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
NL129707C (en) * 1959-06-18
US3277006A (en) * 1962-06-28 1966-10-04 Texas Instruments Inc Double doping of iii-v compound semiconductor material
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
NL295293A (en) * 1962-07-13
NL295918A (en) * 1962-07-31
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same

Also Published As

Publication number Publication date
GB1176691A (en) 1970-01-07
NL6701280A (en) 1967-08-03
US3421952A (en) 1969-01-14
SE311012B (en) 1969-05-27

Similar Documents

Publication Publication Date Title
FR1385185A (en) Solid delay line and its manufacturing process
FR1509713A (en) Manufacturing process for high resistivity compounds and alloys
FR1482902A (en) Ribonucleoside compounds and their manufacturing process
FR1460528A (en) New indolylcarboxylic compounds and their manufacturing process
FR1358741A (en) Heterocyclic compounds and their manufacturing process
FR1513416A (en) Alkyl metal compounds and process for manufacturing said compounds
FR1507392A (en) Process for manufacturing superconducting tapes
CH465230A (en) Polyamide-imide manufacturing process
FR1535012A (en) Process for manufacturing 4-oxopiperidines and new compounds obtained
FR1360633A (en) Refractory compounds and their manufacturing process
FR1542161A (en) New manufacturing process for 2-arylamino-1, 3-diazacycloalkenes- (2)
FR1498015A (en) Polyamide-imide manufacturing process
FR1530985A (en) Manufacturing process for anthraquinone compounds
FR1541394A (en) Manufacturing process of new 3, 4-dihydroxyphenylalkanolamines
FR1537704A (en) New polyblend and manufacturing process
FR1522005A (en) Process for manufacturing thionosalicylanilides
FR1441795A (en) Diazo-photosensitive compounds and their manufacturing process
FR1450008A (en) Compound filaments and dies for their manufacture
FR1453358A (en) Dialkylamino-hydroxy-organosilicon compounds and process for their manufacture
FR1511840A (en) Novel steroid compounds and their manufacturing process
FR1447967A (en) New manufacturing process for 3-amino- or 3-acylamino-pyrazinoylguanidines and pyrazinamidoguanidines
FR1463285A (en) Process for the manufacture of 6, 11-dihydro-dibenzo- [b, e] -oxepin-6-ones with basic substituents
FR1423343A (en) Graphite manufacturing process
FR1459177A (en) New compositions based on polyvinyl compounds and their manufacturing process
FR1478361A (en) New polythiourea-substituted thiourea derivatives and their manufacturing process