GB1259897A - Method for growing epitaxial films - Google Patents
Method for growing epitaxial filmsInfo
- Publication number
- GB1259897A GB1259897A GB23528/69A GB2352869A GB1259897A GB 1259897 A GB1259897 A GB 1259897A GB 23528/69 A GB23528/69 A GB 23528/69A GB 2352869 A GB2352869 A GB 2352869A GB 1259897 A GB1259897 A GB 1259897A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- phosphide
- wafer
- tube
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 2
- PPNXXZIBFHTHDM-UHFFFAOYSA-N aluminium phosphide Chemical compound P#[Al] PPNXXZIBFHTHDM-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
1,259,897. Crystal-growing. WESTERN ELECTRIC CO. Inc. 8 May, 1969 [9 May, 1968], No. 23528/69. Heading B1S. A IIIa-Va compound is grown from a source solution in a well 16 or 17, in a boat crucible 14 contained in a tippable tube 11, onto a seed wafer 24 mounted between shoulders 19 and 20 on the underside of a slidable holder 15, after tipping of the tube anticlockwise or clockwise, respectively, on a cradle (23, Fig. 1) from the inoperative position shown. Shoulder 19 or 20 thereby sweeps off surface impurities from the solution and allows the wafer to be brought into contact with clean surface of the solution. Using n- and p-type material in the respective wells and tipping the tube successively in both directions an n-p junction may be formed. The solution may be of aluminium arsenide or phosphide, or gallium aluminium arsenide or phosphide. Tellurium may be used as dopant and zinc as solvent. The wafer may be of gallium arsenide or phosphide and may have its major faces perpendicular to the (111)-axis. Growing may be effected in hydrogen.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72792768A | 1968-05-09 | 1968-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1259897A true GB1259897A (en) | 1972-01-12 |
Family
ID=24924677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23528/69A Expired GB1259897A (en) | 1968-05-09 | 1969-05-08 | Method for growing epitaxial films |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3551219A (en) |
| BE (1) | BE730166A (en) |
| CA (1) | CA918041A (en) |
| DE (1) | DE1922892B2 (en) |
| FR (1) | FR2008120B1 (en) |
| GB (1) | GB1259897A (en) |
| NL (1) | NL6906839A (en) |
| SE (1) | SE348949B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3858551A (en) * | 1972-06-14 | 1975-01-07 | Matsushita Electric Ind Co Ltd | Apparatus for epitaxial growth from the liquid state |
| US3990392A (en) * | 1968-12-31 | 1976-11-09 | U.S. Philips Corporation | Epitaxial growth apparatus |
| US3664294A (en) * | 1970-01-29 | 1972-05-23 | Fairchild Camera Instr Co | Push-pull structure for solution epitaxial growth of iii{14 v compounds |
| US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
| US3648654A (en) * | 1970-03-16 | 1972-03-14 | Bell Telephone Labor Inc | Vertical liquid phase crystal growth apparatus |
| US3804060A (en) * | 1970-03-27 | 1974-04-16 | Sperry Rand Corp | Liquid epitaxy apparatus |
| US3770518A (en) * | 1971-01-28 | 1973-11-06 | Varian Associates | Method of making gallium arsenide semiconductive devices |
| JPS5329065B1 (en) * | 1971-03-31 | 1978-08-18 | ||
| US3925117A (en) * | 1971-05-28 | 1975-12-09 | Texas Instruments Inc | Method for the two-stage epitaxial growth of iii' v semiconductor compounds |
| US3762367A (en) * | 1973-01-12 | 1973-10-02 | Handotai Kenkyu Shinkokai | Growth apparatus for a liquid growth multi-layer film |
| US3959036A (en) * | 1973-12-03 | 1976-05-25 | Bell Telephone Laboratories, Incorporated | Method for the production of a germanium doped gas contact layer |
| JPS5120081A (en) * | 1974-08-12 | 1976-02-17 | Hitachi Ltd | Ketsushoseichohoho oyobi sochi |
-
1968
- 1968-05-09 US US727927A patent/US3551219A/en not_active Expired - Lifetime
-
1969
- 1969-01-14 CA CA040129A patent/CA918041A/en not_active Expired
- 1969-03-20 BE BE730166D patent/BE730166A/xx unknown
- 1969-04-30 SE SE06161/69*A patent/SE348949B/xx unknown
- 1969-05-05 NL NL6906839A patent/NL6906839A/xx unknown
- 1969-05-05 FR FR6914270A patent/FR2008120B1/fr not_active Expired
- 1969-05-06 DE DE19691922892 patent/DE1922892B2/en active Pending
- 1969-05-08 GB GB23528/69A patent/GB1259897A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA918041A (en) | 1973-01-02 |
| NL6906839A (en) | 1969-11-11 |
| FR2008120A1 (en) | 1970-01-16 |
| DE1922892B2 (en) | 1971-02-11 |
| SE348949B (en) | 1972-09-18 |
| US3551219A (en) | 1970-12-29 |
| FR2008120B1 (en) | 1973-10-19 |
| DE1922892A1 (en) | 1970-04-30 |
| BE730166A (en) | 1969-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |