FR2008120A1 - - Google Patents

Info

Publication number
FR2008120A1
FR2008120A1 FR6914270A FR6914270A FR2008120A1 FR 2008120 A1 FR2008120 A1 FR 2008120A1 FR 6914270 A FR6914270 A FR 6914270A FR 6914270 A FR6914270 A FR 6914270A FR 2008120 A1 FR2008120 A1 FR 2008120A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6914270A
Other languages
French (fr)
Other versions
FR2008120B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2008120A1 publication Critical patent/FR2008120A1/fr
Application granted granted Critical
Publication of FR2008120B1 publication Critical patent/FR2008120B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
FR6914270A 1968-05-09 1969-05-05 Expired FR2008120B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72792768A 1968-05-09 1968-05-09

Publications (2)

Publication Number Publication Date
FR2008120A1 true FR2008120A1 (en) 1970-01-16
FR2008120B1 FR2008120B1 (en) 1973-10-19

Family

ID=24924677

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6914270A Expired FR2008120B1 (en) 1968-05-09 1969-05-05

Country Status (8)

Country Link
US (1) US3551219A (en)
BE (1) BE730166A (en)
CA (1) CA918041A (en)
DE (1) DE1922892B2 (en)
FR (1) FR2008120B1 (en)
GB (1) GB1259897A (en)
NL (1) NL6906839A (en)
SE (1) SE348949B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858551A (en) * 1972-06-14 1975-01-07 Matsushita Electric Ind Co Ltd Apparatus for epitaxial growth from the liquid state
US3990392A (en) * 1968-12-31 1976-11-09 U.S. Philips Corporation Epitaxial growth apparatus
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices
JPS5329065B1 (en) * 1971-03-31 1978-08-18
US3925117A (en) * 1971-05-28 1975-12-09 Texas Instruments Inc Method for the two-stage epitaxial growth of iii' v semiconductor compounds
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
US3959036A (en) * 1973-12-03 1976-05-25 Bell Telephone Laboratories, Incorporated Method for the production of a germanium doped gas contact layer
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
*REVUE AMERICAINE "APPLIED PHYSICS LETTERS", VOLUME 11, 1ER AOUT 1967, "EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 K FROM GA1-XALXAS J-N JUNCTIONS GROWN BY LIQUIDPHASE EPITAXY" H.RUPPRECHT ET AL PAGES 81-83 *
REVUE AMERICAINE "JOURNAL OF APPLIED PHYSICS, VOLUME 37, OCTOBER 1966 "PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP"M.R.LORENZ ET AL PAGES 4094-4102. *
REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOLUME 10, MARS 1968, "ELECTROLUMINESCENT DISPLAY DEVICES" H.S.RUPPRECHT ET AL PAGE 1479) *

Also Published As

Publication number Publication date
CA918041A (en) 1973-01-02
NL6906839A (en) 1969-11-11
GB1259897A (en) 1972-01-12
DE1922892B2 (en) 1971-02-11
SE348949B (en) 1972-09-18
US3551219A (en) 1970-12-29
FR2008120B1 (en) 1973-10-19
DE1922892A1 (en) 1970-04-30
BE730166A (en) 1969-09-01

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Legal Events

Date Code Title Description
ST Notification of lapse