NL7010220A - Epitaxial single crystal film - Google Patents
Epitaxial single crystal filmInfo
- Publication number
- NL7010220A NL7010220A NL7010220A NL7010220A NL7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A
- Authority
- NL
- Netherlands
- Prior art keywords
- single crystal
- crystal film
- oxide
- film
- group
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Epitaxial mixture consists of a monocrystalline, electrically insulating substrate selected from sapphire, spinel, chrysoberyl, gadolinium-gallium garnet, Be oxide, Th oxide, CaF2, BaF2 and a film of a single crystal, consisting of binary and ternary semiconductor mixtures, such as the gps. III - V, which are deposited epitaxially on the substrate, while the component of the group IV is selected from Al, In for the binary case, and Al Ga, AlIN, GaIn and AlGaIn for the ternary case, and the component of group V is selected from As, Sb and P. Film pref. consists of Ga As (P or Sb)x (where x = 0 - 1). Used for making intergrated circuits.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6483569A | 1969-10-01 | 1969-10-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7010220A true NL7010220A (en) | 1971-04-05 |
Family
ID=22058538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7010220A NL7010220A (en) | 1969-10-01 | 1970-07-10 | Epitaxial single crystal film |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE751978A (en) |
NL (1) | NL7010220A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4136350A (en) * | 1977-07-14 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Epitaxial growth of dissimilar materials |
-
1970
- 1970-06-15 BE BE751978D patent/BE751978A/en unknown
- 1970-07-10 NL NL7010220A patent/NL7010220A/en unknown
Also Published As
Publication number | Publication date |
---|---|
BE751978A (en) | 1970-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS4930557B1 (en) | ||
GB1378327A (en) | Iii-v compound on insulating substrate | |
GB1320773A (en) | Method for forming epitaxial crystals or wafers in selected regions of substraes | |
GB1319311A (en) | Epitaxial composite and method of making | |
GB1340671A (en) | Process for epitaxially growing semiconductor crystals of predetermined conductivity type | |
GB1259897A (en) | Method for growing epitaxial films | |
NL7010220A (en) | Epitaxial single crystal film | |
GB1211358A (en) | Improvements in or relating to methods of manufacturing group iii-v semiconductor materials and to materials so produced | |
JPS5289070A (en) | Semiconductor device | |
GB1176950A (en) | Semiconductor Devices | |
JPS52152184A (en) | Semiconductor device | |
JPS52139376A (en) | Production of semiconductor device | |
GB1243295A (en) | Improvements in or relating to the production of thin monocrystalline semiconductor layers | |
JPS5724591A (en) | Manufacture of semiconductor laser device | |
JPS5289071A (en) | Semiconductor device | |
JPS5244584A (en) | Method of treating semiconductor substrate | |
JPS5595318A (en) | Production of amorphous film | |
JPS5274285A (en) | Production of semiconductor device | |
JPS526080A (en) | Production method of semiconductor wafer | |
JPS5271172A (en) | Growth of p type boron phosphide semiconductor | |
JPS5354972A (en) | Production of semiconductor device | |
CHU et al. | Gallium nitride optoelectronic devices(Growth of bulk gallium nitride crystals by ammonolysis of gallium monochloride)[Final Technical Report, 1 Sep. 1971- 31 Aug. 1972] | |
JPS5254371A (en) | Liquid phase epitaxial growth method | |
JPS52109867A (en) | Manufacture for semiconductor crystal | |
JPS52116786A (en) | Production of gallium compound crystal |