NL7010220A - Epitaxial single crystal film - Google Patents

Epitaxial single crystal film

Info

Publication number
NL7010220A
NL7010220A NL7010220A NL7010220A NL7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A NL 7010220 A NL7010220 A NL 7010220A
Authority
NL
Netherlands
Prior art keywords
single crystal
crystal film
oxide
film
group
Prior art date
Application number
NL7010220A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7010220A publication Critical patent/NL7010220A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Epitaxial mixture consists of a monocrystalline, electrically insulating substrate selected from sapphire, spinel, chrysoberyl, gadolinium-gallium garnet, Be oxide, Th oxide, CaF2, BaF2 and a film of a single crystal, consisting of binary and ternary semiconductor mixtures, such as the gps. III - V, which are deposited epitaxially on the substrate, while the component of the group IV is selected from Al, In for the binary case, and Al Ga, AlIN, GaIn and AlGaIn for the ternary case, and the component of group V is selected from As, Sb and P. Film pref. consists of Ga As (P or Sb)x (where x = 0 - 1). Used for making intergrated circuits.
NL7010220A 1969-10-01 1970-07-10 Epitaxial single crystal film NL7010220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6483569A 1969-10-01 1969-10-01

Publications (1)

Publication Number Publication Date
NL7010220A true NL7010220A (en) 1971-04-05

Family

ID=22058538

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7010220A NL7010220A (en) 1969-10-01 1970-07-10 Epitaxial single crystal film

Country Status (2)

Country Link
BE (1) BE751978A (en)
NL (1) NL7010220A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4136350A (en) * 1977-07-14 1979-01-23 Bell Telephone Laboratories, Incorporated Epitaxial growth of dissimilar materials

Also Published As

Publication number Publication date
BE751978A (en) 1970-11-16

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