JPS5254371A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS5254371A
JPS5254371A JP12984675A JP12984675A JPS5254371A JP S5254371 A JPS5254371 A JP S5254371A JP 12984675 A JP12984675 A JP 12984675A JP 12984675 A JP12984675 A JP 12984675A JP S5254371 A JPS5254371 A JP S5254371A
Authority
JP
Japan
Prior art keywords
liquid phase
phase epitaxial
epitaxial growth
growth method
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12984675A
Other languages
Japanese (ja)
Other versions
JPS5441391B2 (en
Inventor
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12984675A priority Critical patent/JPS5254371A/en
Publication of JPS5254371A publication Critical patent/JPS5254371A/en
Publication of JPS5441391B2 publication Critical patent/JPS5441391B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a semiconductor device such as semiconductor laser with a lower threshold value and longer service life by controlling the changes in the compositions between layers having varying compositions, in a method of forming multilayer liquid phase epitaxial wafer of GaAs Al Ga As bases.
COPYRIGHT: (C)1977,JPO&Japio
JP12984675A 1975-10-30 1975-10-30 Liquid phase epitaxial growth method Granted JPS5254371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12984675A JPS5254371A (en) 1975-10-30 1975-10-30 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12984675A JPS5254371A (en) 1975-10-30 1975-10-30 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5254371A true JPS5254371A (en) 1977-05-02
JPS5441391B2 JPS5441391B2 (en) 1979-12-07

Family

ID=15019672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12984675A Granted JPS5254371A (en) 1975-10-30 1975-10-30 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5254371A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934275A (en) * 1972-07-28 1974-03-29
JPS5210073A (en) * 1975-07-14 1977-01-26 Sharp Corp Equipment for liquid phase epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934275A (en) * 1972-07-28 1974-03-29
JPS5210073A (en) * 1975-07-14 1977-01-26 Sharp Corp Equipment for liquid phase epitaxial growth

Also Published As

Publication number Publication date
JPS5441391B2 (en) 1979-12-07

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