JPS5274285A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5274285A
JPS5274285A JP14961575A JP14961575A JPS5274285A JP S5274285 A JPS5274285 A JP S5274285A JP 14961575 A JP14961575 A JP 14961575A JP 14961575 A JP14961575 A JP 14961575A JP S5274285 A JPS5274285 A JP S5274285A
Authority
JP
Japan
Prior art keywords
gaas
production
semiconductor device
atomosphere
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14961575A
Other languages
Japanese (ja)
Inventor
Noriyuki Shige
Motonao Hirao
Kazutoshi Saito
Kazuhiro Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14961575A priority Critical patent/JPS5274285A/en
Publication of JPS5274285A publication Critical patent/JPS5274285A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a Schottky gate FET of reduced series resistance and improved high frequency and noise characteristics by using AlxGa1-xAs whose coefficient of themal expansion agrees well with that of GaAs and in which the growth of GaAs and other crystals is hard to occur when once taken out into the atomosphere, as a coating film.
COPYRIGHT: (C)1977,JPO&Japio
JP14961575A 1975-12-17 1975-12-17 Production of semiconductor device Pending JPS5274285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14961575A JPS5274285A (en) 1975-12-17 1975-12-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14961575A JPS5274285A (en) 1975-12-17 1975-12-17 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5274285A true JPS5274285A (en) 1977-06-22

Family

ID=15479071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14961575A Pending JPS5274285A (en) 1975-12-17 1975-12-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5274285A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4963507A (en) * 1987-04-30 1990-10-16 Siemens Aktiengesellschaft Method and manufacturing a laser diode with buried active layer
US5102812A (en) * 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4963507A (en) * 1987-04-30 1990-10-16 Siemens Aktiengesellschaft Method and manufacturing a laser diode with buried active layer
US5102812A (en) * 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure

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