JPS5274285A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5274285A JPS5274285A JP14961575A JP14961575A JPS5274285A JP S5274285 A JPS5274285 A JP S5274285A JP 14961575 A JP14961575 A JP 14961575A JP 14961575 A JP14961575 A JP 14961575A JP S5274285 A JPS5274285 A JP S5274285A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- production
- semiconductor device
- atomosphere
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a Schottky gate FET of reduced series resistance and improved high frequency and noise characteristics by using AlxGa1-xAs whose coefficient of themal expansion agrees well with that of GaAs and in which the growth of GaAs and other crystals is hard to occur when once taken out into the atomosphere, as a coating film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961575A JPS5274285A (en) | 1975-12-17 | 1975-12-17 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961575A JPS5274285A (en) | 1975-12-17 | 1975-12-17 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5274285A true JPS5274285A (en) | 1977-06-22 |
Family
ID=15479071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14961575A Pending JPS5274285A (en) | 1975-12-17 | 1975-12-17 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5274285A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389768A (en) * | 1981-04-17 | 1983-06-28 | International Business Machines Corporation | Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors |
US4963507A (en) * | 1987-04-30 | 1990-10-16 | Siemens Aktiengesellschaft | Method and manufacturing a laser diode with buried active layer |
US5102812A (en) * | 1989-11-09 | 1992-04-07 | Bell Communications Research | Method of making a lateral bipolar heterojunction structure |
-
1975
- 1975-12-17 JP JP14961575A patent/JPS5274285A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389768A (en) * | 1981-04-17 | 1983-06-28 | International Business Machines Corporation | Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors |
US4963507A (en) * | 1987-04-30 | 1990-10-16 | Siemens Aktiengesellschaft | Method and manufacturing a laser diode with buried active layer |
US5102812A (en) * | 1989-11-09 | 1992-04-07 | Bell Communications Research | Method of making a lateral bipolar heterojunction structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5274285A (en) | Production of semiconductor device | |
JPS52152184A (en) | Semiconductor device | |
JPS5414174A (en) | Manufacture for semiconductor device | |
JPS5329072A (en) | Gallium arsenide semiconductor device | |
JPS53111283A (en) | Compound semiconductor device and production of the same | |
JPS5315299A (en) | Liquid-phase epitaxial growth method of electrooptical crystals | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5425678A (en) | Field effect transistor of ultra high frequency and high output | |
JPS52127188A (en) | Semiconductor device | |
JPS5329679A (en) | Junction type field effect semiconductor device | |
JPS53125777A (en) | Manufacture for field effect transistor | |
JPS5260080A (en) | Semiconductor device | |
JPS543481A (en) | Field effect type semiconductor switching element | |
JPS5378177A (en) | Field effect transistor | |
JPS5393788A (en) | Production of semiconductor device | |
JPS5253678A (en) | Semiconductor integrated circuit and productin of the same | |
JPS5322383A (en) | Iil simiconductor device | |
JPS5326663A (en) | Manu facture of semiconductor device | |
JPS52144972A (en) | Formation method of photo resist film | |
JPS5289071A (en) | Semiconductor device | |
JPS5337380A (en) | Schottky barrier type semiconductor | |
JPS5229186A (en) | Photosemiconductor device | |
JPS52113676A (en) | Semiconductor device | |
JPS5338250A (en) | Transistor circuit | |
JPS52103399A (en) | Production of gallium nitride |