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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP3014476ApriorityCriticalpatent/JPS52113676A/en
Publication of JPS52113676ApublicationCriticalpatent/JPS52113676A/en
PURPOSE: To avoid formation of a modified layer on the surface part and obtain a high frequency diode, transistor, etc. having the higher dielectric strength of Schottky junctions by growing a GaAs layer on a GaAs substrate and covering this layer with a semi-insulating GaAs layer.