JPS52101698A - Vapor phase growth of gallium arsenide - Google Patents

Vapor phase growth of gallium arsenide

Info

Publication number
JPS52101698A
JPS52101698A JP1802076A JP1802076A JPS52101698A JP S52101698 A JPS52101698 A JP S52101698A JP 1802076 A JP1802076 A JP 1802076A JP 1802076 A JP1802076 A JP 1802076A JP S52101698 A JPS52101698 A JP S52101698A
Authority
JP
Japan
Prior art keywords
vapor phase
gallium arsenide
phase growth
layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1802076A
Other languages
Japanese (ja)
Inventor
Takatoshi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1802076A priority Critical patent/JPS52101698A/en
Publication of JPS52101698A publication Critical patent/JPS52101698A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a GaAs layer on a GaAs substrate of (311) B face by pyrolyzing organic gallium compounds and As gas so as to make the GaAs layer mirror surface and to improve the yield of the layer when used in a semiconductor device.
JP1802076A 1976-02-23 1976-02-23 Vapor phase growth of gallium arsenide Pending JPS52101698A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1802076A JPS52101698A (en) 1976-02-23 1976-02-23 Vapor phase growth of gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1802076A JPS52101698A (en) 1976-02-23 1976-02-23 Vapor phase growth of gallium arsenide

Publications (1)

Publication Number Publication Date
JPS52101698A true JPS52101698A (en) 1977-08-25

Family

ID=11959974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1802076A Pending JPS52101698A (en) 1976-02-23 1976-02-23 Vapor phase growth of gallium arsenide

Country Status (1)

Country Link
JP (1) JPS52101698A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611313A1 (en) * 1986-08-28 1988-08-26 Sony Corp VERY FAST SOLID SEMICONDUCTOR COMPRISING GROUP III / V AND METHOD OF MANUFACTURING THE SAME

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611313A1 (en) * 1986-08-28 1988-08-26 Sony Corp VERY FAST SOLID SEMICONDUCTOR COMPRISING GROUP III / V AND METHOD OF MANUFACTURING THE SAME

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