JPS5210073A - Equipment for liquid phase epitaxial growth - Google Patents
Equipment for liquid phase epitaxial growthInfo
- Publication number
- JPS5210073A JPS5210073A JP8653875A JP8653875A JPS5210073A JP S5210073 A JPS5210073 A JP S5210073A JP 8653875 A JP8653875 A JP 8653875A JP 8653875 A JP8653875 A JP 8653875A JP S5210073 A JPS5210073 A JP S5210073A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- equipment
- epitaxial growth
- phase epitaxial
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To grow an uniform crystal layer on a substrate having large area consuming a small amount of solution by arranging a substrate in a snall gap to whicg a solution is inserted to make liquid phase growth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8653875A JPS5210073A (en) | 1975-07-14 | 1975-07-14 | Equipment for liquid phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8653875A JPS5210073A (en) | 1975-07-14 | 1975-07-14 | Equipment for liquid phase epitaxial growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5210073A true JPS5210073A (en) | 1977-01-26 |
JPS5426467B2 JPS5426467B2 (en) | 1979-09-04 |
Family
ID=13889765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8653875A Granted JPS5210073A (en) | 1975-07-14 | 1975-07-14 | Equipment for liquid phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5210073A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5254371A (en) * | 1975-10-30 | 1977-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth method |
JPS5261958A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Method and device for liquid phase crystal crowth |
JPS52146554A (en) * | 1976-05-31 | 1977-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Multilayer epitaxial growth and its apparatus |
-
1975
- 1975-07-14 JP JP8653875A patent/JPS5210073A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5254371A (en) * | 1975-10-30 | 1977-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth method |
JPS5441391B2 (en) * | 1975-10-30 | 1979-12-07 | ||
JPS5261958A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Method and device for liquid phase crystal crowth |
JPS52146554A (en) * | 1976-05-31 | 1977-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Multilayer epitaxial growth and its apparatus |
JPS5510970B2 (en) * | 1976-05-31 | 1980-03-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS5426467B2 (en) | 1979-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IE34306L (en) | Epitaxial growth of semiconductor crystals. | |
JPS5260300A (en) | Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet | |
JPS5210073A (en) | Equipment for liquid phase epitaxial growth | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5262698A (en) | Working method of garnet crystal | |
JPS53147684A (en) | Method of and apparatus for liquid phase epitaxial growth | |
JPS5252899A (en) | Apparatus for liquid phase epitaxial crystal growth | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS5435899A (en) | Production of rare earth element gallium garnet single crystal | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS5261958A (en) | Method and device for liquid phase crystal crowth | |
JPS5316647A (en) | Manufacture of liquid crystal display device | |
JPS52117900A (en) | Growing method for single crystal thin film of bismuth oxide compounds | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS5387985A (en) | Gaseous phase epitaxial growth method for compound semiconductor crystal | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5349396A (en) | Both-side polishing machine | |
JPS51114384A (en) | Liquid phase epitaxial crystal growth | |
JPS5337184A (en) | Epitaxially growing method in liquid phase | |
JPS5335699A (en) | Growing method for heteroepitaxial membrane | |
JPS52127500A (en) | Production of linb1-taxo3 single crystal film | |
JPS51141577A (en) | Method and apparatus for epitaxial growth in the liquid phase | |
JPS5365300A (en) | Method of growing single crystal epitaxial layer on substrate and basic holder used in this method | |
JPS5269560A (en) | Electronic line irradiation epitaxial method |