JPS5210073A - Equipment for liquid phase epitaxial growth - Google Patents

Equipment for liquid phase epitaxial growth

Info

Publication number
JPS5210073A
JPS5210073A JP8653875A JP8653875A JPS5210073A JP S5210073 A JPS5210073 A JP S5210073A JP 8653875 A JP8653875 A JP 8653875A JP 8653875 A JP8653875 A JP 8653875A JP S5210073 A JPS5210073 A JP S5210073A
Authority
JP
Japan
Prior art keywords
liquid phase
equipment
epitaxial growth
phase epitaxial
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8653875A
Other languages
Japanese (ja)
Other versions
JPS5426467B2 (en
Inventor
Kazuhisa Murata
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8653875A priority Critical patent/JPS5210073A/en
Publication of JPS5210073A publication Critical patent/JPS5210073A/en
Publication of JPS5426467B2 publication Critical patent/JPS5426467B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To grow an uniform crystal layer on a substrate having large area consuming a small amount of solution by arranging a substrate in a snall gap to whicg a solution is inserted to make liquid phase growth.
JP8653875A 1975-07-14 1975-07-14 Equipment for liquid phase epitaxial growth Granted JPS5210073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8653875A JPS5210073A (en) 1975-07-14 1975-07-14 Equipment for liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8653875A JPS5210073A (en) 1975-07-14 1975-07-14 Equipment for liquid phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5210073A true JPS5210073A (en) 1977-01-26
JPS5426467B2 JPS5426467B2 (en) 1979-09-04

Family

ID=13889765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8653875A Granted JPS5210073A (en) 1975-07-14 1975-07-14 Equipment for liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5210073A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254371A (en) * 1975-10-30 1977-05-02 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth method
JPS5261958A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Method and device for liquid phase crystal crowth
JPS52146554A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Multilayer epitaxial growth and its apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254371A (en) * 1975-10-30 1977-05-02 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth method
JPS5441391B2 (en) * 1975-10-30 1979-12-07
JPS5261958A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Method and device for liquid phase crystal crowth
JPS52146554A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Multilayer epitaxial growth and its apparatus
JPS5510970B2 (en) * 1976-05-31 1980-03-21

Also Published As

Publication number Publication date
JPS5426467B2 (en) 1979-09-04

Similar Documents

Publication Publication Date Title
IE34306L (en) Epitaxial growth of semiconductor crystals.
JPS5260300A (en) Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet
JPS5210073A (en) Equipment for liquid phase epitaxial growth
JPS547861A (en) Liquid phase epitaxial growth method
JPS5262698A (en) Working method of garnet crystal
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS5252899A (en) Apparatus for liquid phase epitaxial crystal growth
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5435899A (en) Production of rare earth element gallium garnet single crystal
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5316647A (en) Manufacture of liquid crystal display device
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS52106673A (en) Crystal growing method and device thereof
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS52155189A (en) Multiple layer crystal growth
JPS5211860A (en) Liquid phase epitaxial device
JPS5349396A (en) Both-side polishing machine
JPS51114384A (en) Liquid phase epitaxial crystal growth
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS5335699A (en) Growing method for heteroepitaxial membrane
JPS52127500A (en) Production of linb1-taxo3 single crystal film
JPS51141577A (en) Method and apparatus for epitaxial growth in the liquid phase
JPS5365300A (en) Method of growing single crystal epitaxial layer on substrate and basic holder used in this method
JPS5269560A (en) Electronic line irradiation epitaxial method