JPS5435899A - Production of rare earth element gallium garnet single crystal - Google Patents

Production of rare earth element gallium garnet single crystal

Info

Publication number
JPS5435899A
JPS5435899A JP10153677A JP10153677A JPS5435899A JP S5435899 A JPS5435899 A JP S5435899A JP 10153677 A JP10153677 A JP 10153677A JP 10153677 A JP10153677 A JP 10153677A JP S5435899 A JPS5435899 A JP S5435899A
Authority
JP
Japan
Prior art keywords
single crystal
production
rare earth
earth element
garnet single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10153677A
Other languages
Japanese (ja)
Other versions
JPS5953240B2 (en
Inventor
Kazumasa Takagi
Tokumi Fukazawa
Seikichi Akiyama
Mitsuru Ishii
Fumio Nitanda
Kohei Ito
Tei Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52101536A priority Critical patent/JPS5953240B2/en
Publication of JPS5435899A publication Critical patent/JPS5435899A/en
Publication of JPS5953240B2 publication Critical patent/JPS5953240B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To grow a straight single crystal of high quality and enhance the yield by continuously reducing the rotational fraquency of the crystal so as to maintain the same shape of the solid-melt interface of the crystal in a process for growing the parallel portion of the crystal.
COPYRIGHT: (C)1979,JPO&Japio
JP52101536A 1977-08-26 1977-08-26 Method for producing rare earth gallium garnet single crystal Expired JPS5953240B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52101536A JPS5953240B2 (en) 1977-08-26 1977-08-26 Method for producing rare earth gallium garnet single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52101536A JPS5953240B2 (en) 1977-08-26 1977-08-26 Method for producing rare earth gallium garnet single crystal

Publications (2)

Publication Number Publication Date
JPS5435899A true JPS5435899A (en) 1979-03-16
JPS5953240B2 JPS5953240B2 (en) 1984-12-24

Family

ID=14303153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52101536A Expired JPS5953240B2 (en) 1977-08-26 1977-08-26 Method for producing rare earth gallium garnet single crystal

Country Status (1)

Country Link
JP (1) JPS5953240B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155826A (en) * 1981-02-25 1982-09-27 Tektronix Inc Optical isolator circuit
JP2012224516A (en) * 2011-04-20 2012-11-15 Sumitomo Metal Mining Co Ltd Method for producing oxide single crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6696470B2 (en) * 2017-03-24 2020-05-20 株式会社豊田自動織機 Electric compressor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994582A (en) * 1973-01-16 1974-09-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994582A (en) * 1973-01-16 1974-09-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155826A (en) * 1981-02-25 1982-09-27 Tektronix Inc Optical isolator circuit
JP2012224516A (en) * 2011-04-20 2012-11-15 Sumitomo Metal Mining Co Ltd Method for producing oxide single crystal

Also Published As

Publication number Publication date
JPS5953240B2 (en) 1984-12-24

Similar Documents

Publication Publication Date Title
JPS5347765A (en) Semiconductor crystal growth method
JPS5435899A (en) Production of rare earth element gallium garnet single crystal
JPS549174A (en) Method of producing seingle crystal
JPS5365997A (en) Manufacturing process of tantalum acid lithium single crystal
JPS549171A (en) Single crystal pulling method
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS524782A (en) Liquid phase epitaxial growth method
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS52138095A (en) Growth of sapphire single crystal
JPS52155189A (en) Multiple layer crystal growth
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS5435898A (en) Growing method for rare earth element gallium garnet single crystal
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS52114269A (en) Selective liquid growing method
JPS5211193A (en) Production of crystalline gypsum fiber
JPS52135264A (en) Liquid phase epitaxial growth method
JPS51111481A (en) Apparatus for ribbon-from single crystal growth
JPS5688899A (en) Growth of artificial rock crystal
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS5250164A (en) Process for production of semiconductor single crystal
JPS53100177A (en) Growing method for band crystal
JPS52153900A (en) Production of spinel-type ferrite single crystals
JPS5261958A (en) Method and device for liquid phase crystal crowth