JPS53100177A - Growing method for band crystal - Google Patents
Growing method for band crystalInfo
- Publication number
- JPS53100177A JPS53100177A JP1428877A JP1428877A JPS53100177A JP S53100177 A JPS53100177 A JP S53100177A JP 1428877 A JP1428877 A JP 1428877A JP 1428877 A JP1428877 A JP 1428877A JP S53100177 A JPS53100177 A JP S53100177A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growing method
- band crystal
- slit
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow band crystal with very few triangular or fan-shaped parts of crystal and without causing adherence of grown crystal to the upper end of the slit by bringing seed crystal with breadth at the lowest end larger than that of die slit into contact with the surface of a molten liquid over whole range in lateral direction, and by pulling up the seed crystal.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1428877A JPS589793B2 (en) | 1977-02-14 | 1977-02-14 | How to grow band crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1428877A JPS589793B2 (en) | 1977-02-14 | 1977-02-14 | How to grow band crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53100177A true JPS53100177A (en) | 1978-09-01 |
JPS589793B2 JPS589793B2 (en) | 1983-02-22 |
Family
ID=11856898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1428877A Expired JPS589793B2 (en) | 1977-02-14 | 1977-02-14 | How to grow band crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS589793B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014073314A1 (en) * | 2012-11-07 | 2014-05-15 | 株式会社タムラ製作所 | METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL |
-
1977
- 1977-02-14 JP JP1428877A patent/JPS589793B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014073314A1 (en) * | 2012-11-07 | 2014-05-15 | 株式会社タムラ製作所 | METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL |
JP2014094839A (en) * | 2012-11-07 | 2014-05-22 | Tamura Seisakusho Co Ltd | METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL |
US9926646B2 (en) | 2012-11-07 | 2018-03-27 | Tamura Corporation | Method for growing B-Ga2O3-based single crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS589793B2 (en) | 1983-02-22 |
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