JPS53100177A - Growing method for band crystal - Google Patents

Growing method for band crystal

Info

Publication number
JPS53100177A
JPS53100177A JP1428877A JP1428877A JPS53100177A JP S53100177 A JPS53100177 A JP S53100177A JP 1428877 A JP1428877 A JP 1428877A JP 1428877 A JP1428877 A JP 1428877A JP S53100177 A JPS53100177 A JP S53100177A
Authority
JP
Japan
Prior art keywords
crystal
growing method
band crystal
slit
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1428877A
Other languages
Japanese (ja)
Other versions
JPS589793B2 (en
Inventor
Toshiro Matsui
Hiroshi Ito
Naoaki Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1428877A priority Critical patent/JPS589793B2/en
Publication of JPS53100177A publication Critical patent/JPS53100177A/en
Publication of JPS589793B2 publication Critical patent/JPS589793B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow band crystal with very few triangular or fan-shaped parts of crystal and without causing adherence of grown crystal to the upper end of the slit by bringing seed crystal with breadth at the lowest end larger than that of die slit into contact with the surface of a molten liquid over whole range in lateral direction, and by pulling up the seed crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP1428877A 1977-02-14 1977-02-14 How to grow band crystals Expired JPS589793B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1428877A JPS589793B2 (en) 1977-02-14 1977-02-14 How to grow band crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1428877A JPS589793B2 (en) 1977-02-14 1977-02-14 How to grow band crystals

Publications (2)

Publication Number Publication Date
JPS53100177A true JPS53100177A (en) 1978-09-01
JPS589793B2 JPS589793B2 (en) 1983-02-22

Family

ID=11856898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1428877A Expired JPS589793B2 (en) 1977-02-14 1977-02-14 How to grow band crystals

Country Status (1)

Country Link
JP (1) JPS589793B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073314A1 (en) * 2012-11-07 2014-05-15 株式会社タムラ製作所 METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073314A1 (en) * 2012-11-07 2014-05-15 株式会社タムラ製作所 METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL
JP2014094839A (en) * 2012-11-07 2014-05-22 Tamura Seisakusho Co Ltd METHOD FOR GROWING β-Ga2O3 SINGLE CRYSTAL
US9926646B2 (en) 2012-11-07 2018-03-27 Tamura Corporation Method for growing B-Ga2O3-based single crystal

Also Published As

Publication number Publication date
JPS589793B2 (en) 1983-02-22

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