JPS54112789A - Growing method for single crystal - Google Patents
Growing method for single crystalInfo
- Publication number
- JPS54112789A JPS54112789A JP1976678A JP1976678A JPS54112789A JP S54112789 A JPS54112789 A JP S54112789A JP 1976678 A JP1976678 A JP 1976678A JP 1976678 A JP1976678 A JP 1976678A JP S54112789 A JPS54112789 A JP S54112789A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- liq
- interface
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
PURPOSE: To grow eulitite group cpd. single crystal with formation of a small number of voids, by selecting number of revolution of crystal to regulate the ratio of raised height H at the solid/liq. interface of the crystal to the diameter D of grown crystal, i.e., H/D, in a specified range.
CONSTITUTION: In growing by Cyochralsky method eulitite group single crystal, e.g., Bi4Ge3O12, Bi4Si3O12, the number of revolution of the crystal is selected so that the ratio of the raised height H of the crystal at solid/liq. interface to the diameter D or the single crystal, i.e., H/D, may lie in a range -0.2W+0.3, the plus sign indicating convex, and the minus sign concave. In short, the flatter is the solid/ liq. interface of the crystal, the less is the formation of the voids, and the higher is the quality and yield of the single crystal.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976678A JPS5849517B2 (en) | 1978-02-24 | 1978-02-24 | Single crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976678A JPS5849517B2 (en) | 1978-02-24 | 1978-02-24 | Single crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54112789A true JPS54112789A (en) | 1979-09-03 |
| JPS5849517B2 JPS5849517B2 (en) | 1983-11-04 |
Family
ID=12008452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1976678A Expired JPS5849517B2 (en) | 1978-02-24 | 1978-02-24 | Single crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5849517B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314293A (en) * | 1985-01-24 | 1994-05-24 | Adept Technology, Inc. | Direct drive robotic system |
| CN102010196A (en) * | 2010-10-12 | 2011-04-13 | 陕西科技大学 | Method for preparing Bi4Si3O12 powder by using molten salt method |
| CN111549373A (en) * | 2020-05-14 | 2020-08-18 | 北方民族大学 | Pulling method for growing bismuth silicate (Bi) with uniform components4Si3O12Method for producing BSO) crystals |
-
1978
- 1978-02-24 JP JP1976678A patent/JPS5849517B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314293A (en) * | 1985-01-24 | 1994-05-24 | Adept Technology, Inc. | Direct drive robotic system |
| CN102010196A (en) * | 2010-10-12 | 2011-04-13 | 陕西科技大学 | Method for preparing Bi4Si3O12 powder by using molten salt method |
| CN111549373A (en) * | 2020-05-14 | 2020-08-18 | 北方民族大学 | Pulling method for growing bismuth silicate (Bi) with uniform components4Si3O12Method for producing BSO) crystals |
| CN111549373B (en) * | 2020-05-14 | 2021-12-24 | 北方民族大学 | Pulling method for growing bismuth silicate (Bi) with uniform components4Si3O12Method for producing BSO) crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5849517B2 (en) | 1983-11-04 |
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