JPS54150377A - Upbringing method for single crystal - Google Patents

Upbringing method for single crystal

Info

Publication number
JPS54150377A
JPS54150377A JP5982878A JP5982878A JPS54150377A JP S54150377 A JPS54150377 A JP S54150377A JP 5982878 A JP5982878 A JP 5982878A JP 5982878 A JP5982878 A JP 5982878A JP S54150377 A JPS54150377 A JP S54150377A
Authority
JP
Japan
Prior art keywords
single crystal
rotations
solid
flat face
nearly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5982878A
Other languages
Japanese (ja)
Other versions
JPS6129914B2 (en
Inventor
Koji Tada
Hirokuni Nanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP5982878A priority Critical patent/JPS54150377A/en
Publication of JPS54150377A publication Critical patent/JPS54150377A/en
Publication of JPS6129914B2 publication Critical patent/JPS6129914B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To simply and easily manufacture high quality large single crystal, by regulating the number of rotations of lifting shaft so as to keep the shape of solid- liquid interface nearly in flat face corresponding to the change of thermal enviromment accompanied by the development of crystal upbringing.
CONSTITUTION: Shape of the solid-liquid interface 4 is grown up keeping nearly in flat face by pulling up the single crystal 1 of B12SiO20 etc., especially giving suitable rotation to the axis 3 after contacting seed crystal attached to the lifting shaft 3 with the molten liquid 2. On this occasion, in regard to the most suitable number of rotations of lifting shaft ωc keeping the interface 4 at flat face, straight-line relation shown by the formula ωc=aK+b (a and b;experimentally found constant), is comfirmed between ωc and the aspect ratio K=H/D(H;height of the molten liquid, D; diameter of molten liquid) experimentally. That is, the formation of solid-liquid interface of the single crystal 1 is able to keep always flat maintaining the other factor nearly constant, by decreasing the number of rotations ωc of the shaft 3 and accordingly, high quality large single crystal having uniform characteristics, is able to manufacture easily.
COPYRIGHT: (C)1979,JPO&Japio
JP5982878A 1978-05-18 1978-05-18 Upbringing method for single crystal Granted JPS54150377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5982878A JPS54150377A (en) 1978-05-18 1978-05-18 Upbringing method for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5982878A JPS54150377A (en) 1978-05-18 1978-05-18 Upbringing method for single crystal

Publications (2)

Publication Number Publication Date
JPS54150377A true JPS54150377A (en) 1979-11-26
JPS6129914B2 JPS6129914B2 (en) 1986-07-10

Family

ID=13124468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5982878A Granted JPS54150377A (en) 1978-05-18 1978-05-18 Upbringing method for single crystal

Country Status (1)

Country Link
JP (1) JPS54150377A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899199A (en) * 1981-12-04 1983-06-13 Matsushima Kogyo Co Ltd Synthesizing method for artificial beryl single crystal by pulling method
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JP2012224516A (en) * 2011-04-20 2012-11-15 Sumitomo Metal Mining Co Ltd Method for producing oxide single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899199A (en) * 1981-12-04 1983-06-13 Matsushima Kogyo Co Ltd Synthesizing method for artificial beryl single crystal by pulling method
JPH0224799B2 (en) * 1981-12-04 1990-05-30 Matsushima Kogyo Kk
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JP2012224516A (en) * 2011-04-20 2012-11-15 Sumitomo Metal Mining Co Ltd Method for producing oxide single crystal

Also Published As

Publication number Publication date
JPS6129914B2 (en) 1986-07-10

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