JPS5532768A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5532768A
JPS5532768A JP10642078A JP10642078A JPS5532768A JP S5532768 A JPS5532768 A JP S5532768A JP 10642078 A JP10642078 A JP 10642078A JP 10642078 A JP10642078 A JP 10642078A JP S5532768 A JPS5532768 A JP S5532768A
Authority
JP
Japan
Prior art keywords
single crystal
crucible
density
crystal
grow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10642078A
Other languages
Japanese (ja)
Inventor
Toshiharu Ito
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10642078A priority Critical patent/JPS5532768A/en
Publication of JPS5532768A publication Critical patent/JPS5532768A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simply produce a single crystal of high quality and a fixed diameter with high productivity by providing a temp. gradient to a crucible to grow a single crystal of a diameter related to the radius of the crucible, the density of a melt and the density of the crystal.
CONSTITUTION: A melt of density dL is charged into a crucible of radius rc to grow a single crystal of density ds with a seed crystal fitted to the melt. In case of dL/ds<0.90 a suitable temp. gradient is provided to the crucible to grow a single crystal of radius r represented by the equation by pulling a seed crystal. A simple pulling mechanism alone for attaching the single crystal is required, simplifying the single crystal growing device. Since no sudden temp. change occurs, a high quality single crystal with no flaw and strain can be obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP10642078A 1978-08-31 1978-08-31 Production of single crystal Pending JPS5532768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10642078A JPS5532768A (en) 1978-08-31 1978-08-31 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10642078A JPS5532768A (en) 1978-08-31 1978-08-31 Production of single crystal

Publications (1)

Publication Number Publication Date
JPS5532768A true JPS5532768A (en) 1980-03-07

Family

ID=14433165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10642078A Pending JPS5532768A (en) 1978-08-31 1978-08-31 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5532768A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624164A (en) * 1986-03-31 1987-01-10 Kanzaki Paper Mfg Co Ltd Sheet connecting method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624164A (en) * 1986-03-31 1987-01-10 Kanzaki Paper Mfg Co Ltd Sheet connecting method

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