JPS5659693A - Beltlike crystal manufacturing apparatus - Google Patents

Beltlike crystal manufacturing apparatus

Info

Publication number
JPS5659693A
JPS5659693A JP13592479A JP13592479A JPS5659693A JP S5659693 A JPS5659693 A JP S5659693A JP 13592479 A JP13592479 A JP 13592479A JP 13592479 A JP13592479 A JP 13592479A JP S5659693 A JPS5659693 A JP S5659693A
Authority
JP
Japan
Prior art keywords
crystal
beltlike
melt
cover
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13592479A
Other languages
Japanese (ja)
Inventor
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP13592479A priority Critical patent/JPS5659693A/en
Publication of JPS5659693A publication Critical patent/JPS5659693A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To stably obtain a broad thin beltilike crystal by placing a cover having a crystal pulling opening over the crucible of a beltlike crystal manufacturing apparatus and setting an after-heater having a crystal pulling hole of predetermined form on the cover opening.
CONSTITUTION: The lower end of die 5 having slit 4 is dipped in desired crystal melt 3 in crucible 2 installed in quartz tube 1, melt 3 is kept at a predetermined temp. with high frequency heating source 6, and seed crystal 8 is pulled up to grow a beltlike crystal. Cover 9 having crystal pulling opening 10 is placed over crucible 2 of this apparatus, and after-heater 11 having crystal pulling hole 12 about equal to the cross-sectional form of growing crystal 8 and tapered toward hole 12 is set on opening 10 of cover 9. As a result, a temp. fluctuation of melt 3 and a temp. difference of melt 3 in the pulling direction are controlled to very low levels, so broad thin beltlike crystal 8 is obtd. stably.
COPYRIGHT: (C)1981,JPO&Japio
JP13592479A 1979-10-23 1979-10-23 Beltlike crystal manufacturing apparatus Pending JPS5659693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13592479A JPS5659693A (en) 1979-10-23 1979-10-23 Beltlike crystal manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13592479A JPS5659693A (en) 1979-10-23 1979-10-23 Beltlike crystal manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPS5659693A true JPS5659693A (en) 1981-05-23

Family

ID=15163026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13592479A Pending JPS5659693A (en) 1979-10-23 1979-10-23 Beltlike crystal manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPS5659693A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826097A (en) * 1981-08-03 1983-02-16 モ−ビル・ソラ−、エナ−ジ−・コ−ポレ−ション Tubular crystal member growth device
JP2007532458A (en) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Single crystal and manufacturing method thereof
JP2010504274A (en) * 2006-09-22 2010-02-12 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Method and apparatus for C-plane sapphire
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826097A (en) * 1981-08-03 1983-02-16 モ−ビル・ソラ−、エナ−ジ−・コ−ポレ−ション Tubular crystal member growth device
JPH0327513B2 (en) * 1981-08-03 1991-04-16 Moobiru Soraa Enaajii Corp
JP2007532458A (en) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Single crystal and manufacturing method thereof
JP2010229030A (en) * 2004-04-08 2010-10-14 Saint-Gobain Ceramics & Plastics Inc Single crystal and method for fabricating same
US8157913B2 (en) 2004-04-08 2012-04-17 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire single crystal
USRE43469E1 (en) 2004-04-08 2012-06-12 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US8685161B2 (en) 2004-04-08 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
US9926645B2 (en) 2004-04-08 2018-03-27 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a single crystal sheet using a die having a thermal gradient along its length
US9963800B2 (en) 2004-04-08 2018-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of making a sapphire component including machining a sapphire single crystal
JP2010504274A (en) * 2006-09-22 2010-02-12 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Method and apparatus for C-plane sapphire
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

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