GB1354495A - Methods of growing crystals - Google Patents

Methods of growing crystals

Info

Publication number
GB1354495A
GB1354495A GB1354495DA GB1354495A GB 1354495 A GB1354495 A GB 1354495A GB 1354495D A GB1354495D A GB 1354495DA GB 1354495 A GB1354495 A GB 1354495A
Authority
GB
United Kingdom
Prior art keywords
crystal
cylinder
melt
crucible
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Publication of GB1354495A publication Critical patent/GB1354495A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1354495 Crystal-pulling MULLARD Ltd 6 July 1971 [30 July 1970] 36986/70 Heading B1S In a crystal pulling apparatus, wherein a crystal 15 is pulled from a melt 14 in a crucible 1, the crucible contains a hollow porous cylindrical member 12, the crystal being pulled from inside this cylinder, to suppress thermal oscillations in the melt. Both the cylinder and the crucible are of platinum in the embodiment, the cylinder being of platinum gauze. An irregular mass of platinum wire may be placed at the bottom of cylinder 12 to further damp thermal oscillation. The diameter of the crystal may be controlled by an oxygen jet from a nozzle 11 and a heat shield 10 may be present. A cobalt-doped zinc tungstate crystal was described as being grown, although strontium barium niobate is also mentioned. Heating of the melt is by a radio frequency coil 8.
GB1354495D 1970-07-30 1970-07-30 Methods of growing crystals Expired GB1354495A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3698670 1970-07-30

Publications (1)

Publication Number Publication Date
GB1354495A true GB1354495A (en) 1974-06-05

Family

ID=10392793

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1354495D Expired GB1354495A (en) 1970-07-30 1970-07-30 Methods of growing crystals

Country Status (1)

Country Link
GB (1) GB1354495A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4474641A (en) * 1981-04-29 1984-10-02 U.S. Philips Corporation Method of drawing a silicon rod
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
GB2207617A (en) * 1987-08-06 1989-02-08 Atomic Energy Authority Uk Single crystal pulling
RU2560402C1 (en) * 2014-02-14 2015-08-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Method for monocrystal growing from molten metal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
US4474641A (en) * 1981-04-29 1984-10-02 U.S. Philips Corporation Method of drawing a silicon rod
GB2207617A (en) * 1987-08-06 1989-02-08 Atomic Energy Authority Uk Single crystal pulling
RU2560402C1 (en) * 2014-02-14 2015-08-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Method for monocrystal growing from molten metal

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees