GB1089696A - The formation of tubular single crystals - Google Patents
The formation of tubular single crystalsInfo
- Publication number
- GB1089696A GB1089696A GB46806/64A GB4680664A GB1089696A GB 1089696 A GB1089696 A GB 1089696A GB 46806/64 A GB46806/64 A GB 46806/64A GB 4680664 A GB4680664 A GB 4680664A GB 1089696 A GB1089696 A GB 1089696A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tubular
- charge
- seed
- plate
- monocrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/18—Heating of the molten zone the heating element being in contact with, or immersed in, the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A tubular monocrystal consisting of the mixed tungstates of calcium, sodium and neodymium and for use in the manufacture of lasers is produced by passing a heated perforated plate 2 and associated molten zone through a tubular charge material 1 from the tubular end face of a rotating seed 3 (Fig. 1, not shown). The material of the charge may have been pressed into tubular form and sintered. The single crystal may have been formed by machining a recess in one end face of a monocrystalline rod. The plate may be of iridium or rhodium and may be resistively heated by a three phase current. It may have three perforations 8 and a central opening 12 corresponding to the bore of the tubular monocrystal (Fig. 2, not shown). It may have an annular ridge containing the perforations on its lower surface (Fig. 3, not shown). The charge, seed and plate may be surrounded by a silica shield containing an atmosphere consisting of 90% of argon and 10% of oxygen. The atmos may pass to the interior of the charge &c., through bores 10 in the seed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB46806/64A GB1089696A (en) | 1964-11-17 | 1964-11-17 | The formation of tubular single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB46806/64A GB1089696A (en) | 1964-11-17 | 1964-11-17 | The formation of tubular single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1089696A true GB1089696A (en) | 1967-11-01 |
Family
ID=10442664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB46806/64A Expired GB1089696A (en) | 1964-11-17 | 1964-11-17 | The formation of tubular single crystals |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1089696A (en) |
-
1964
- 1964-11-17 GB GB46806/64A patent/GB1089696A/en not_active Expired
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