GB894739A - Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting - Google Patents

Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting

Info

Publication number
GB894739A
GB894739A GB2941/61A GB294161A GB894739A GB 894739 A GB894739 A GB 894739A GB 2941/61 A GB2941/61 A GB 2941/61A GB 294161 A GB294161 A GB 294161A GB 894739 A GB894739 A GB 894739A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
melting
seed
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2941/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB894739A publication Critical patent/GB894739A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10L—FUELS NOT OTHERWISE PROVIDED FOR; NATURAL GAS; SYNTHETIC NATURAL GAS OBTAINED BY PROCESSES NOT COVERED BY SUBCLASSES C10G, C10K; LIQUEFIED PETROLEUM GAS; ADDING MATERIALS TO FUELS OR FIRES TO REDUCE SMOKE OR UNDESIRABLE DEPOSITS OR TO FACILITATE SOOT REMOVAL; FIRELIGHTERS
    • C10L1/00—Liquid carbonaceous fuels
    • C10L1/04—Liquid carbonaceous fuels essentially based on blends of hydrocarbons
    • C10L1/06—Liquid carbonaceous fuels essentially based on blends of hydrocarbons for spark ignition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Abstract

894,739. Zone-melting. PHILIPS ELECTRICAL INDUSTRIES Ltd. Jan. 25, 1961 [Jan. 28, 1960], No. 2941/61. Drawings to Specification. Class 32. In the formation of a monocrystalline rod of silicon having a protective film of silicon monoxide by zone-melting in an atmosphere comprising oxygen, a molten zone is passed from one end of the polycrystalline rod into a monocrystalline seed joined to the other end and back to the first mentioned end. The rod may be supported in a crucible or at each end only. The passage of the molten zone in the first direction may be through a gas-liquid surface layer, the cross-sectional area of the zone being gradually increased to its maximum within the seed on reversal of direction. Heating may be by a surrounding induction coil. Initial formation of the molten zone at the end of the polycrystalline rod spaced from the seed ensures that irregularities in the initially formed silicon monoxide film affect one end only of the resulting monocrystalline rod, which end may be cut off from the rest of the rod.
GB2941/61A 1960-01-28 1961-01-25 Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting Expired GB894739A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL247855 1960-01-28

Publications (1)

Publication Number Publication Date
GB894739A true GB894739A (en) 1962-04-26

Family

ID=31979972

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2941/61A Expired GB894739A (en) 1960-01-28 1961-01-25 Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting

Country Status (4)

Country Link
US (1) US3092462A (en)
DE (1) DE1209997B (en)
FR (1) FR1280914A (en)
GB (1) GB894739A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519399A (en) * 1967-05-22 1970-07-07 Hughes Aircraft Co Method for growing single crystals of semiconductors
US4126509A (en) * 1975-11-14 1978-11-21 Siemens Aktiengesellschaft Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1303150B (en) * 1961-01-13 1971-05-13 Philips Nv
US4120743A (en) * 1975-12-31 1978-10-17 Motorola, Inc. Crossed grain growth
US4532000A (en) * 1983-09-28 1985-07-30 Hughes Aircraft Company Fabrication of single crystal fibers from congruently melting polycrystalline fibers
DE4105910A1 (en) * 1991-02-26 1992-08-27 Bayer Ag METHOD FOR PRODUCING METAL FILMS AND THE USE THEREOF

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
GB745698A (en) * 1953-09-25 1956-02-29 Standard Telephones Cables Ltd Improvements in or relating to methods of producing silicon of high purity
NL95386C (en) * 1954-02-24
DE1051013B (en) * 1955-06-17 1959-02-19 Western Electric Company, Incorporated, New York, N. Y. (V. St. A.) Method for keeping liquids, in particular melts, free-floating
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US2967115A (en) * 1958-07-25 1961-01-03 Gen Electric Method of depositing silicon on a silica coated substrate
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519399A (en) * 1967-05-22 1970-07-07 Hughes Aircraft Co Method for growing single crystals of semiconductors
US4126509A (en) * 1975-11-14 1978-11-21 Siemens Aktiengesellschaft Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal

Also Published As

Publication number Publication date
US3092462A (en) 1963-06-04
DE1209997B (en) 1966-02-03
FR1280914A (en) 1962-01-08

Similar Documents

Publication Publication Date Title
GB894739A (en) Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting
GB916390A (en) Method of drawing a semi-conductor rod from a melt
GB1034503A (en) Improvements in or relating to the production of crystalline material
GB1022427A (en) An apparatus for zone-by-zone melting a rod of crystalline material
GB1029804A (en) A process for producing a substantially monocrystalline rod of semiconductor material
JPS51134071A (en) Method to eliminate crystal defects of silicon
JPS5315081A (en) Junction type field effect transistor and its production
GB1079870A (en) A method of melting a rod of crystalline material zone-by-zone
GB709364A (en) Improvements in and relating to methods of stabilizing semiconductor materials
GB1059960A (en) The production of semi-conductor rods
JPS5345679A (en) Pulling-up apparatus for sillicon single crystal
GB1095587A (en)
GB1081827A (en) Improvements in or relating to a floating zone process
GB1375132A (en)
GB1006034A (en) A method of producing a rod of semi-conductor material
GB1191166A (en) Zone Melting
GB1084930A (en) Zone-by-zone melting of a rod of semi-conductor material
Vavilov et al. Influence of the Irradiation Temperature and of the Nature of Dopant on the Formation of Defects in n-Type Electron-Irradiated Si
GB1230726A (en)
GB1312884A (en) Zone refining process
JPS57106598A (en) Semiconductor crystal growing device
GB931692A (en) A process for doping semi-conductor material with boron
GB1045526A (en) A method of zone-by-zone melting a rod of semiconductor material
JPS5326663A (en) Manu facture of semiconductor device
GB1386356A (en) Zone melting process