GB1022427A - An apparatus for zone-by-zone melting a rod of crystalline material - Google Patents

An apparatus for zone-by-zone melting a rod of crystalline material

Info

Publication number
GB1022427A
GB1022427A GB4979/65A GB497965A GB1022427A GB 1022427 A GB1022427 A GB 1022427A GB 4979/65 A GB4979/65 A GB 4979/65A GB 497965 A GB497965 A GB 497965A GB 1022427 A GB1022427 A GB 1022427A
Authority
GB
United Kingdom
Prior art keywords
zone
rod
concentrator
melting
heating coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4979/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1022427A publication Critical patent/GB1022427A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,022,427. Zone - melting. SIEMENSSCHUCKERTWERKE A.G. Feb. 4, 1965 [Feb. 8, 1964], No. 4979/65. Heading B1S. A rod is zone-melted using a pan cake induction heating coil aided by a concentrator of variable diameter. The rod may be of circular, square or hexagonal cross-section, and may be of silicon, germanium, tungsten or molybdenum. The induction heating current may be 1-5 megacycles/sec. The concentrator may be of silver or copper coated with silver, may be water-cooled, and may be divided into 2-4 relatively movable parts. It may lie within or above or below the heating coil. Two concentrators may be employed, one above and one below the heating coil. The zone-melting may be effected in a vacuum or protective gas atmosphere. A monocrystalline rod having a diameter of 12-40 mm. may be produced using a seed having a diameter of 3-5 mm. As shown, a concentrator in four parts surrounds a cylindrical rod.
GB4979/65A 1964-02-08 1965-02-04 An apparatus for zone-by-zone melting a rod of crystalline material Expired GB1022427A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES89439A DE1260439B (en) 1964-02-08 1964-02-08 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1022427A true GB1022427A (en) 1966-03-16

Family

ID=7515113

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4979/65A Expired GB1022427A (en) 1964-02-08 1965-02-04 An apparatus for zone-by-zone melting a rod of crystalline material

Country Status (7)

Country Link
US (1) US3342970A (en)
BE (1) BE659252A (en)
CH (1) CH414553A (en)
DE (1) DE1260439B (en)
FR (1) FR1445481A (en)
GB (1) GB1022427A (en)
SE (1) SE302116B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
DE2538854B2 (en) * 1975-09-01 1979-02-15 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Single-turn induction heating coil for crucible-free zone melting
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
US4458127A (en) * 1981-05-26 1984-07-03 Park-Ohio Industries, Inc. Inductor for annealing work hardened portions of structural beams
DE3143146A1 (en) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3226713A1 (en) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3229461A1 (en) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR POT-FREE ZONE MELTING OF A SEMICONDUCTOR STICK, PARTICULARLY MADE OF SILICON
US4549051A (en) * 1984-02-15 1985-10-22 Ness Richard A Induction heating device for nozzles of containers
JPS63291888A (en) * 1987-05-25 1988-11-29 Shin Etsu Handotai Co Ltd Production device for semiconductor single crystal
DE3938937A1 (en) * 1989-11-24 1991-05-29 Wacker Chemitronic METHOD AND DEVICE FOR PRODUCING SILICON RODS WITH A HIGH OXYGEN CONTENT BY PULLING ZONE-FREE, THROUGH AVAILABLE SILICON RODS AND THE SILICONE DISC MADE THEREOF
WO2010007678A1 (en) * 2008-07-17 2010-01-21 電気興業株式会社 Structure of guide chip for high-frequency induction heating coil

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL61586C (en) * 1944-04-26
BE561654A (en) * 1953-09-25 1900-01-01
NL258961A (en) * 1959-12-23
US3100250A (en) * 1961-04-07 1963-08-06 Herczog Andrew Zone melting apparatus
FR1358425A (en) * 1963-01-22 1964-04-17 Traitements Electrolytiques & High Frequency Plasma Torch Improvement

Also Published As

Publication number Publication date
FR1445481A (en) 1966-07-15
BE659252A (en) 1965-08-04
CH414553A (en) 1966-06-15
US3342970A (en) 1967-09-19
SE302116B (en) 1968-07-08
DE1260439B (en) 1968-02-08

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