GB1175449A - Crucible-Free Zone-by-Zone Melting Operations - Google Patents

Crucible-Free Zone-by-Zone Melting Operations

Info

Publication number
GB1175449A
GB1175449A GB27106/67A GB2710667A GB1175449A GB 1175449 A GB1175449 A GB 1175449A GB 27106/67 A GB27106/67 A GB 27106/67A GB 2710667 A GB2710667 A GB 2710667A GB 1175449 A GB1175449 A GB 1175449A
Authority
GB
United Kingdom
Prior art keywords
zone
rod
recrystallized
supply
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27106/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1175449A publication Critical patent/GB1175449A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating

Abstract

1,175,449. Floating zone-melting. SIEMENS A.G, 12 June, 1967 [15 June, 1966], No. 27106/67. Heading B1S. In the floating zone-melting of a silicon rod attached to a seed using an induction coil, the coil is eccentrically disposed with respect to the supply rod and the recrystallized rod for at least part of the operation. The coil may be reciprocated by rectilinear or circular movement of its axis at e.g. 9 alternations per minute between maximum and minimum eccentricity. The speed of passage of the molten zone may be 2 mm/min. The recrystallized rod may be rotated at 20 rpm. The cross-sectional area of the seed may be up to one tenth that of the supply rod. In steady operation, the diameter of both the supply and recrystallized rods may be larger than that of the coil. The supply and recrystallized rods may be on the same axis (Fig. 2) or may be offset (Fig. 5).
GB27106/67A 1966-06-15 1967-06-12 Crucible-Free Zone-by-Zone Melting Operations Expired GB1175449A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0104290 1966-06-15

Publications (1)

Publication Number Publication Date
GB1175449A true GB1175449A (en) 1969-12-23

Family

ID=7525764

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27106/67A Expired GB1175449A (en) 1966-06-15 1967-06-12 Crucible-Free Zone-by-Zone Melting Operations

Country Status (5)

Country Link
US (1) US3685973A (en)
BE (1) BE699651A (en)
DK (1) DK138779B (en)
GB (1) GB1175449A (en)
NL (1) NL143435B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
DE2533858C2 (en) * 1975-07-29 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Device for crucible-free zone melting of a semiconductor material rod with an induction heating coil fixed in the axial direction
DE2538812A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD OF DOPING SEMICONDUCTOR RODS
JPS63291888A (en) * 1987-05-25 1988-11-29 Shin Etsu Handotai Co Ltd Production device for semiconductor single crystal
US5319670A (en) * 1992-07-24 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Velocity damper for electromagnetically levitated materials

Also Published As

Publication number Publication date
DK138779C (en) 1979-04-09
DE1519894A1 (en) 1971-01-21
DK138779B (en) 1978-10-30
US3685973A (en) 1972-08-22
NL6708321A (en) 1967-12-18
BE699651A (en) 1967-12-08
DE1519894B2 (en) 1975-10-09
NL143435B (en) 1974-10-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee