GB1008299A - Improvements in or relating to the zone melting of silicon rods - Google Patents

Improvements in or relating to the zone melting of silicon rods

Info

Publication number
GB1008299A
GB1008299A GB4820363A GB4820363A GB1008299A GB 1008299 A GB1008299 A GB 1008299A GB 4820363 A GB4820363 A GB 4820363A GB 4820363 A GB4820363 A GB 4820363A GB 1008299 A GB1008299 A GB 1008299A
Authority
GB
United Kingdom
Prior art keywords
rod
boundary angle
relating
zone
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4820363A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1008299A publication Critical patent/GB1008299A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,008,299. Zone - melting. SIEMENS & HALSKE A.G. Dec. 6, 1963 [Dec. 7, 1962], No. 48203/63. Heading B1S. In the downward passage of a molten zone produced by induction heating through a silicon rod, the boundary angle of the molten zone at one of the liquid-solid interfaces is maintained at 12 degrees Π1 degree. The boundary angle may be maintained by the use of one or more short circuiting rings or of one or more additional coils wound in the opposite direction to the heating coil and carrying a weak current of the same frequency as that of the heating coil. A rod of smaller diameter than the initial rod with the boundary angle at the upper interface (Fig. 1) or a rod of unchanged diameter with the boundary angle at the lower interface (Fig. 2) may be produced.
GB4820363A 1962-12-07 1963-12-06 Improvements in or relating to the zone melting of silicon rods Expired GB1008299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082750 1962-12-07

Publications (1)

Publication Number Publication Date
GB1008299A true GB1008299A (en) 1965-10-27

Family

ID=7510570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4820363A Expired GB1008299A (en) 1962-12-07 1963-12-06 Improvements in or relating to the zone melting of silicon rods

Country Status (4)

Country Link
CH (1) CH414552A (en)
DE (1) DE1248614B (en)
GB (1) GB1008299A (en)
NL (1) NL299517A (en)

Also Published As

Publication number Publication date
CH414552A (en) 1966-06-15
NL299517A (en)
DE1248614B (en) 1967-08-31

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