GB847189A - Zone melting apparatus - Google Patents

Zone melting apparatus

Info

Publication number
GB847189A
GB847189A GB29542/58A GB2954258A GB847189A GB 847189 A GB847189 A GB 847189A GB 29542/58 A GB29542/58 A GB 29542/58A GB 2954258 A GB2954258 A GB 2954258A GB 847189 A GB847189 A GB 847189A
Authority
GB
United Kingdom
Prior art keywords
coil
coils
rod
current
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29542/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Publication of GB847189A publication Critical patent/GB847189A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

In the zone refining of a rod of silicon or <PICT:0847189/III/1> <PICT:0847189/III/2> germanium by the passage therethrough of a molten zone produced by a suitably energized induction coil, a second induction coil energized at a frequency insufficient of itself to melt the rod is placed below the first coil to enable the formation of an enlarged molten zone. A third coil similar to the second coil may be placed above the first coil. The second and third coils may have one or more turns. They may each be upright or inverted frusto-conical shape. Fig. 2 illustrates two coils 44 and 36, and Fig. 3 three coils 44, 36, and 50. The rod may be preheated, e.g. by the longitudinal passage of a current therethrough. A current of 3-5 mc/s may be passed through the first coil, and a current of 500 kc/s through the second and third coils. Apparatus (Fig. 1, not shown) for supporting the rod is described.
GB29542/58A 1957-09-23 1958-09-15 Zone melting apparatus Expired GB847189A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US685652A US2897329A (en) 1957-09-23 1957-09-23 Zone melting apparatus

Publications (1)

Publication Number Publication Date
GB847189A true GB847189A (en) 1960-09-07

Family

ID=24753126

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29542/58A Expired GB847189A (en) 1957-09-23 1958-09-15 Zone melting apparatus

Country Status (3)

Country Link
US (1) US2897329A (en)
FR (1) FR1224825A (en)
GB (1) GB847189A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212051B (en) * 1961-03-17 1966-03-10 Siemens Ag Process for crucible zone melting of rods made of silicon

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236919A (en) * 1957-03-07 1900-01-01
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
US3086850A (en) * 1959-06-17 1963-04-23 Itt Method and means for growing and treating crystals
US3101257A (en) * 1959-08-17 1963-08-20 Lawrence M Hagen Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
NL112520C (en) * 1959-10-19
NL260305A (en) * 1960-01-20
US3092462A (en) * 1960-01-28 1963-06-04 Philips Corp Method for the manufacture of rods of meltable material
DE1163559B (en) * 1960-08-20 1964-02-20 Siemens Ag Method and device for the production of single-crystal rods, in particular for semiconductor arrangements, by means of crucible-free zone melting
NL269311A (en) * 1960-09-20
US3156807A (en) * 1961-10-27 1964-11-10 North American Aviation Inc Induction heating method and means
DE1235463B (en) * 1963-01-31 1967-03-02 Commissariat Energie Atomique Process for compressing chemical compounds which are not electrically conductive or are poorly conductive at room temperature
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
CA888377A (en) * 1969-09-29 1971-12-14 Canadian Westinghouse Company Limited Vacuum induction heat treatment of long tubular products
US3858549A (en) * 1973-08-15 1975-01-07 Siemens Ag Apparatus for controlled doping of semiconductor crystals
US4120743A (en) * 1975-12-31 1978-10-17 Motorola, Inc. Crossed grain growth
US4419177A (en) * 1980-09-29 1983-12-06 Olin Corporation Process for electromagnetically casting or reforming strip materials
JPS6041036B2 (en) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 GaAs floating zone melting grass crystal production equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212051B (en) * 1961-03-17 1966-03-10 Siemens Ag Process for crucible zone melting of rods made of silicon

Also Published As

Publication number Publication date
FR1224825A (en) 1960-06-27
US2897329A (en) 1959-07-28

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