GB762982A - Improvements relating to the melting of silicon - Google Patents

Improvements relating to the melting of silicon

Info

Publication number
GB762982A
GB762982A GB365654A GB365654A GB762982A GB 762982 A GB762982 A GB 762982A GB 365654 A GB365654 A GB 365654A GB 365654 A GB365654 A GB 365654A GB 762982 A GB762982 A GB 762982A
Authority
GB
United Kingdom
Prior art keywords
silicon
ingot
induction heating
pict
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB365654A
Inventor
James Wakefield
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB365654A priority Critical patent/GB762982A/en
Priority to FR1118960D priority patent/FR1118960A/en
Publication of GB762982A publication Critical patent/GB762982A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J6/00Heat treatments such as Calcining; Fusing ; Pyrolysis
    • B01J6/005Fusing
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0762982/III/1> <PICT:0762982/III/2> In the zone refining of silicon by means of high frequency induction heating, the silicon is preheated, e.g. to 500 DEG C. or above, by passing an electric current through the silicon. When the induction heating becomes effective, the preheating may be terminated or reduced. As shown an ingot of silicon is clamped between two electrodes 2a and 2b which are preferably water cooled and of stainless steel. The electrodes are connected by a bridge 3 and insulator 4 and are movable vertically. Surrounding the ingot is a watercooled induction heating coil 5 and a heat concentrator in the form of a hollow cylinder 7 of magnetic material having an internal flange 8 and radial slit 10 (Fig. 2). The concentrator is preferably water cooled. The ingot is enclosed in a container 11, e.g. of borosilicate glass having an opening for evacuating the container or supplying inert gas thereto. The apparatus may also be used for fusing together two pieces of silicon, especially for fusing a mono-crystal seed to a polycrystalline ingot in order to grow a single crystal.
GB365654A 1954-02-08 1954-02-08 Improvements relating to the melting of silicon Expired GB762982A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB365654A GB762982A (en) 1954-02-08 1954-02-08 Improvements relating to the melting of silicon
FR1118960D FR1118960A (en) 1954-02-08 1955-02-08 Improvements in silicon fusion processes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB365654A GB762982A (en) 1954-02-08 1954-02-08 Improvements relating to the melting of silicon

Publications (1)

Publication Number Publication Date
GB762982A true GB762982A (en) 1956-12-05

Family

ID=9762440

Family Applications (1)

Application Number Title Priority Date Filing Date
GB365654A Expired GB762982A (en) 1954-02-08 1954-02-08 Improvements relating to the melting of silicon

Country Status (2)

Country Link
FR (1) FR1118960A (en)
GB (1) GB762982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
CN114471371A (en) * 2021-12-23 2022-05-13 宏雷机械设备(南通)有限公司 Toluene recovery device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
CN114471371A (en) * 2021-12-23 2022-05-13 宏雷机械设备(南通)有限公司 Toluene recovery device
CN114471371B (en) * 2021-12-23 2023-10-27 宏雷机械设备(南通)有限公司 Toluene recovery device

Also Published As

Publication number Publication date
FR1118960A (en) 1956-06-13

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