JPS5645894A - Reducing method for defect of silicon single crystal - Google Patents
Reducing method for defect of silicon single crystalInfo
- Publication number
- JPS5645894A JPS5645894A JP12209779A JP12209779A JPS5645894A JP S5645894 A JPS5645894 A JP S5645894A JP 12209779 A JP12209779 A JP 12209779A JP 12209779 A JP12209779 A JP 12209779A JP S5645894 A JPS5645894 A JP S5645894A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- crucible
- silicon single
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a high quality silicon single crystal by heating a growing crystal to a specified temp. with a heating means while controlling the internal temp. state of a single crystal growing apparatus and by carrying out rapid cooling to reduce defects of the crystal due to the heat history.
CONSTITUTION: Silicon put into quartz crucible 2a in furnace chamber 1 is melted with heating element 5, and while rotating crucible 2a with rotating shaft 8, silicon single crystal 4 is pulled up with rotating shaft 7. By supplying an electric current to high frequency induction heating coil 12, upper carbon cylinder 9 ≤15cm away from the surface of the melt in crucible 2a is heated to ≥900°C to heat or keep single crystal 4 at ≥900°C, and the time required to cool crystal 4 from 900°C to 600°C is controlled to a fixed short time with cooling pipe 10 arranged over cylinder 9 with heat insulating pad 11 in-between.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12209779A JPS5645894A (en) | 1979-09-25 | 1979-09-25 | Reducing method for defect of silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12209779A JPS5645894A (en) | 1979-09-25 | 1979-09-25 | Reducing method for defect of silicon single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5645894A true JPS5645894A (en) | 1981-04-25 |
Family
ID=14827567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12209779A Pending JPS5645894A (en) | 1979-09-25 | 1979-09-25 | Reducing method for defect of silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645894A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151393A (en) * | 1982-02-26 | 1983-09-08 | Fujitsu Ltd | Production of silicon crystal |
JPS60204693A (en) * | 1984-03-28 | 1985-10-16 | Toshiba Corp | Method of pulling up compound semiconductor crystal and device therefor |
JPH0193489A (en) * | 1987-10-01 | 1989-04-12 | Kyushu Electron Metal Co Ltd | Production of single crystal for semiconductor |
JPH0194468U (en) * | 1987-12-16 | 1989-06-21 | ||
JPH01313384A (en) * | 1988-06-13 | 1989-12-18 | Mitsubishi Metal Corp | Method for growing silicon single crystal |
JPH03153595A (en) * | 1989-11-11 | 1991-07-01 | Osaka Titanium Co Ltd | Device for pulling single crystal |
JPH0442893A (en) * | 1990-06-07 | 1992-02-13 | Mitsubishi Materials Corp | Silicon wafer |
KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
-
1979
- 1979-09-25 JP JP12209779A patent/JPS5645894A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151393A (en) * | 1982-02-26 | 1983-09-08 | Fujitsu Ltd | Production of silicon crystal |
JPH021119B2 (en) * | 1982-02-26 | 1990-01-10 | Fujitsu Ltd | |
JPS60204693A (en) * | 1984-03-28 | 1985-10-16 | Toshiba Corp | Method of pulling up compound semiconductor crystal and device therefor |
JPH0193489A (en) * | 1987-10-01 | 1989-04-12 | Kyushu Electron Metal Co Ltd | Production of single crystal for semiconductor |
JPH0194468U (en) * | 1987-12-16 | 1989-06-21 | ||
JPH0523579Y2 (en) * | 1987-12-16 | 1993-06-16 | ||
JPH01313384A (en) * | 1988-06-13 | 1989-12-18 | Mitsubishi Metal Corp | Method for growing silicon single crystal |
JPH03153595A (en) * | 1989-11-11 | 1991-07-01 | Osaka Titanium Co Ltd | Device for pulling single crystal |
JPH0442893A (en) * | 1990-06-07 | 1992-02-13 | Mitsubishi Materials Corp | Silicon wafer |
KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
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