JPS5645894A - Reducing method for defect of silicon single crystal - Google Patents

Reducing method for defect of silicon single crystal

Info

Publication number
JPS5645894A
JPS5645894A JP12209779A JP12209779A JPS5645894A JP S5645894 A JPS5645894 A JP S5645894A JP 12209779 A JP12209779 A JP 12209779A JP 12209779 A JP12209779 A JP 12209779A JP S5645894 A JPS5645894 A JP S5645894A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
crucible
silicon single
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12209779A
Other languages
Japanese (ja)
Inventor
Hideo Nakanishi
Keigo Hoshikawa
Masayuki Suzuki
Masaharu Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Kokusai Electric Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Kokusai Electric Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12209779A priority Critical patent/JPS5645894A/en
Publication of JPS5645894A publication Critical patent/JPS5645894A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high quality silicon single crystal by heating a growing crystal to a specified temp. with a heating means while controlling the internal temp. state of a single crystal growing apparatus and by carrying out rapid cooling to reduce defects of the crystal due to the heat history.
CONSTITUTION: Silicon put into quartz crucible 2a in furnace chamber 1 is melted with heating element 5, and while rotating crucible 2a with rotating shaft 8, silicon single crystal 4 is pulled up with rotating shaft 7. By supplying an electric current to high frequency induction heating coil 12, upper carbon cylinder 9 ≤15cm away from the surface of the melt in crucible 2a is heated to ≥900°C to heat or keep single crystal 4 at ≥900°C, and the time required to cool crystal 4 from 900°C to 600°C is controlled to a fixed short time with cooling pipe 10 arranged over cylinder 9 with heat insulating pad 11 in-between.
COPYRIGHT: (C)1981,JPO&Japio
JP12209779A 1979-09-25 1979-09-25 Reducing method for defect of silicon single crystal Pending JPS5645894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12209779A JPS5645894A (en) 1979-09-25 1979-09-25 Reducing method for defect of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12209779A JPS5645894A (en) 1979-09-25 1979-09-25 Reducing method for defect of silicon single crystal

Publications (1)

Publication Number Publication Date
JPS5645894A true JPS5645894A (en) 1981-04-25

Family

ID=14827567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12209779A Pending JPS5645894A (en) 1979-09-25 1979-09-25 Reducing method for defect of silicon single crystal

Country Status (1)

Country Link
JP (1) JPS5645894A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151393A (en) * 1982-02-26 1983-09-08 Fujitsu Ltd Production of silicon crystal
JPS60204693A (en) * 1984-03-28 1985-10-16 Toshiba Corp Method of pulling up compound semiconductor crystal and device therefor
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JPH0194468U (en) * 1987-12-16 1989-06-21
JPH01313384A (en) * 1988-06-13 1989-12-18 Mitsubishi Metal Corp Method for growing silicon single crystal
JPH03153595A (en) * 1989-11-11 1991-07-01 Osaka Titanium Co Ltd Device for pulling single crystal
JPH0442893A (en) * 1990-06-07 1992-02-13 Mitsubishi Materials Corp Silicon wafer
KR20030020809A (en) * 2001-09-04 2003-03-10 전우용 Appratus and method of sapphire production by high frequency reduction heating process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151393A (en) * 1982-02-26 1983-09-08 Fujitsu Ltd Production of silicon crystal
JPH021119B2 (en) * 1982-02-26 1990-01-10 Fujitsu Ltd
JPS60204693A (en) * 1984-03-28 1985-10-16 Toshiba Corp Method of pulling up compound semiconductor crystal and device therefor
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JPH0194468U (en) * 1987-12-16 1989-06-21
JPH0523579Y2 (en) * 1987-12-16 1993-06-16
JPH01313384A (en) * 1988-06-13 1989-12-18 Mitsubishi Metal Corp Method for growing silicon single crystal
JPH03153595A (en) * 1989-11-11 1991-07-01 Osaka Titanium Co Ltd Device for pulling single crystal
JPH0442893A (en) * 1990-06-07 1992-02-13 Mitsubishi Materials Corp Silicon wafer
KR20030020809A (en) * 2001-09-04 2003-03-10 전우용 Appratus and method of sapphire production by high frequency reduction heating process

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