JPH0873299A - Continuous raw material supply type apparatus for producing ferrite single crystal - Google Patents
Continuous raw material supply type apparatus for producing ferrite single crystalInfo
- Publication number
- JPH0873299A JPH0873299A JP6238408A JP23840894A JPH0873299A JP H0873299 A JPH0873299 A JP H0873299A JP 6238408 A JP6238408 A JP 6238408A JP 23840894 A JP23840894 A JP 23840894A JP H0873299 A JPH0873299 A JP H0873299A
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- Prior art keywords
- heating
- single crystal
- raw material
- ferrite single
- crystal
- Prior art date
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- Soft Magnetic Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、原料連続供給式フェラ
イト単結晶製造装置の改良に関する発明である。特に、
大型で長尺な単結晶を引下げ法（ブリッジマン法とも言
う）で育成する分野に於いて、供給原料を連続的に育成
るつぼ内へ供給する装置を持つ単結晶育成装置に利用で
きるものである。良質で生産原価の廉価な単結晶を製造
する場合は、大型で長尺な単結晶を得ることが重要課題
になっている。特に、大型で長尺な単結晶をブリッジマ
ン法で育成する為に発明された装置で、育成されたフェ
ライト単結晶の内部の組成（ＭｎＯ，ＺｎＯ，Ｆｅ ，
Ｏ ）を均一にし、更に亀裂のない、サブグレ−ンの少
ない結晶を得る為のものである。利用される分野は、磁
気ヘッド用ＭｎＺｎフェライト単結晶である。その他に
は、表面弾性波用のゲルマニウム酸ビスマス、ホウ酸リ
チウム、タンタル酸リチウム及びニオブ酸リチウム等の
分野である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a continuous feed type ferrite single crystal production apparatus for raw materials. In particular,
In the field of growing large and long single crystals by the pull-down method (also called Bridgman method), it can be used as a single-crystal growing device having a device for continuously feeding a feed material into a crucible. . When manufacturing a single crystal of good quality and low production cost, obtaining a large and long single crystal is an important issue. In particular, in the device invented for growing a large and long single crystal by the Bridgman method, the internal composition (MnO, ZnO, Fe 3,
O 2) is made uniform, and a crystal free from cracks and having a small number of subgrains is obtained. The field of use is MnZn ferrite single crystal for magnetic heads. Other fields include bismuth germanate for surface acoustic waves, lithium borate, lithium tantalate, and lithium niobate.
【０００２】[0002]
【従来の技術】従来の技術は、特に大型で長尺な単結晶
をブリッジマン法で育成するには、発熱体部を長くする
ために垂直に配置された炉芯管と直角方向にケラマック
ス（ＬａＣｒＯ系）の発熱体を両側に平行あるいは四角
い井桁構造に配置されていた。また、各加熱部を３ゾ−
ンに分割し、独立に温度制御することにより、均一温度
部分を長くする方法が採られてきた。元来結晶育成は、
原料をいったん溶融し、溶液及び融液から固体への相転
移である為に、固体と液体の遷移層は薄い程、良質な結
晶が得られるとされている。このことは、結晶が固化す
る部分での、温度勾配中が、育成後の結晶に亀裂が入ら
ない程度に大きいほど良いことを意味しているが、この
点従来のＬａＣｒＯ電気炉は何も考慮されずにいた。2. Description of the Related Art In the prior art, in particular, in order to grow a large and long single crystal by the Bridgman method, a Keramax is arranged in a direction perpendicular to a furnace core tube vertically arranged to elongate a heating element. The (LaCrO-based) heating elements were arranged on both sides in parallel or in a square girder structure. In addition, each heating unit is
A method has been adopted in which the uniform temperature portion is lengthened by dividing the temperature into independent parts and controlling the temperature independently. Originally, crystal growth was
It is said that the thinner the transition layer between the solid and the liquid, the better the quality of the crystal, because the raw material is once melted and the phase transition from the solution or the melt to the solid is performed. This means that it is better that the temperature gradient in the portion where the crystal is solidified is large enough so that cracks do not occur in the crystal after the growth, but in this respect, the conventional LaCrO electric furnace has no consideration. I was left without it.
【０００３】しかし、ケラマックス発熱体は、その特性
から加熱時にはＣｒが常に蒸発し、炉芯管や炉材等周囲
のものを汚染していた。このＣｒが結晶内に入る懸念が
あり、磁気特性への影響が心配されていたとの欠点があ
った。また、従来の大型育成装置では、結晶育成部の温
度勾配が８〜１８℃／ｃｍ程度であり、これでは、サブ
グレ−ンが入り、更にＰｔの混入があり、結晶の歩留ま
りが悪かったとの欠点があった。However, in the Keramax heating element, Cr is always evaporated during heating due to its characteristic, and the surroundings such as the furnace core tube and the furnace material are contaminated. There is a concern that this Cr may enter the crystal and there is a concern that it may affect the magnetic properties. Further, in the conventional large-sized growing apparatus, the temperature gradient of the crystal growing portion is about 8 to 18 ° C./cm, and this has a disadvantage that the yield of the crystals is poor due to the inclusion of subgrains and the inclusion of Pt. was there.
【０００４】[0004]
【発明が解決しようとする課題】本装置は、高品質で大
型で長尺なフェライト単結晶を連続供給式の引下げ法で
大量に製造する為に発明された装置である。ブリッジマ
ン法によってフェライト単結晶を製造する為には、製造
コストの観点から、大型で長尺な単結晶で、かつ酸化
鉄、酸化マンガン、酸化亜鉛の組成が一定であり、方位
のずれであるサブグレ−ンが少なく、白金の混入がない
こと、亀裂がないこと、更にＣｒ等の磁気特性に影響す
る磁性不純物がない単結晶を製造することが好ましいこ
とは一般的に理解されている。本発明は、前記の問題点
を解決する為の原料連続供給式フェライト単結晶製造装
置を提供することを目的とするものである。The present apparatus is an apparatus invented for producing a large quantity of high-quality, large-sized and long ferrite single crystals by a continuous feeding type pulling down method. In order to manufacture a ferrite single crystal by the Bridgman method, from the viewpoint of manufacturing cost, it is a large and long single crystal, and the composition of iron oxide, manganese oxide, and zinc oxide is constant, and the orientation is shifted. It is generally understood that it is preferable to produce a single crystal having a small amount of subgrains, no platinum inclusion, no cracks, and no magnetic impurities such as Cr that affect magnetic properties. An object of the present invention is to provide a raw material continuous supply type ferrite single crystal manufacturing apparatus for solving the above problems.
【０００５】[0005]
【課題を解決するための手段】前記目的を達成するため
に、発明者は鋭意努力を重ねた結果、フェライト単結晶
に悪影響のないＭｏＳｉ系発熱体を用いて、更に多ゾ−
ンに分割し、その間に空気等のガスや水で冷却できる冷
却体を挿入したことにより、従来の結晶育成部の温度勾
配を１８〜３５℃／ｃｍにすることができ、サブグレ−
ンやＰｔによる悪影響を減らし、結晶の良品歩留まりを
従来の６０％から９０％に向上させることができるよう
になった。また、結晶の長さに応じて結晶内部に亀裂が
入らないように、高温発熱体部の下側に、温度が１１０
０℃以上に上げることができる加熱部を少なくとも１ゾ
−ン設けることにより、育成後の結晶内部の温度差を５
００ｍｍで５００℃以下に押さえ亀裂を無くすることが
できた。更に、副次効果ではあるが、結晶育成速度を
２．０ｍｍ／Ｈから、２．５ｍｍ／Ｈにでき、生産性も
向上させることができた。そして、このことは従来のケ
ラマックス３ゾ−ン電気炉においても、結晶固化部に関
係するゾ−ンの間に本発明のガス及び水等の冷却体を入
れる構造にすれば、同様の効果をもたらす。In order to achieve the above object, the inventor has made diligent efforts, and as a result, using a MoSi-based heating element that does not adversely affect the ferrite single crystal, a higher number of zones were obtained.
The temperature gradient of the conventional crystal growth part can be set to 18 to 35 ° C./cm by inserting a cooling body that can be cooled with a gas such as air or water between them.
It has become possible to reduce the adverse effect of boron and Pt and improve the yield of non-defective crystals from 60% to 90%. Further, in order to prevent cracks from being generated inside the crystal depending on the length of the crystal, a temperature of 110
By providing at least one heating zone capable of raising the temperature to 0 ° C. or higher, the temperature difference inside the crystal after the growth is reduced to 5
It was possible to eliminate cracks when pressed to 500 ° C. or less at 00 mm. Further, although it is a side effect, the crystal growth rate could be increased from 2.0 mm / H to 2.5 mm / H, and the productivity could be improved. The same effect can be obtained even in the conventional Keramax 3 zone electric furnace if the cooling body such as the gas and water of the present invention is inserted between the zones related to the crystal solidification section. Bring
【０００６】[0006]
【実施例】次に、本発明を図面に基づいて詳細に説明す
る。図１は、本発明である原料連続供給式フェライト単
結晶製造装置の電気炉部の正面概略図である。本原料連
続供給式フェライト単結晶製造装置Ａは、炉体ベ−ス板
４上に架台１を組み立て、前記架台１内に各種機器を設
置してある。架台１内の上部には、原料１７を入れる原
料容器１６が容器支持台２１により支持されているとと
もに、雲台２１上に放射温度計１８が設置されていて、
放射温度計１８と原料容器１６との間には鏡１９が設置
されている。架台１の中央部には、炉支持板２及び炉止
め板３により保持されている電気炉９が設置されてい
て、前記電気炉９内には、駆動機構部５により駆動する
駆動ボ−ルネジ６及びガイド管２２により支持されてい
るるつぼ受け台２３のるつぼ支持管８に支持されてるつ
ぼ１１が設置されている。そして、原料容器１６の下部
にはノス゛ル１５が取り付けられており、前記ノス゛ル
１５はるつぼ１１の上部に取り付けられている供給用ガ
イド管１４に接続されている。符号１３は融液、符号１
２は育成後の結晶を示す。The present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic front view of an electric furnace section of the apparatus for continuously supplying a raw material ferrite single crystal according to the present invention. In the continuous feed type ferrite single crystal manufacturing apparatus A of the present invention, a gantry 1 is assembled on a furnace base plate 4 and various equipment is installed in the gantry 1. In the upper part of the gantry 1, a raw material container 16 for containing a raw material 17 is supported by a container support 21, and a radiation thermometer 18 is installed on the platform 21.
A mirror 19 is installed between the radiation thermometer 18 and the raw material container 16. An electric furnace 9 held by a furnace support plate 2 and a furnace stop plate 3 is installed in a central portion of the gantry 1, and a drive ball screw driven by a drive mechanism unit 5 is provided in the electric furnace 9. The crucible 11 supported by the crucible support tube 8 of the crucible holder 23 supported by the guide tube 6 and the guide tube 22 is installed. A nozzle 15 is attached to a lower portion of the raw material container 16, and the nozzle 15 is connected to a supply guide tube 14 attached to an upper portion of the crucible 11. Reference numeral 13 is a melt, reference numeral 1
2 indicates a crystal after being grown.
【０００７】図２は、本発明に関わる原料連続供給式フ
ェライト単結晶製造装置の横断面図である。本実施例
は、図２に示すように、白金育成るつぼ４６は、アルミ
ナ支持管４５に支えられ、この支持管４５は支持台５０
に置かれ、この支持台５０は駆動部４８により上下に移
動することができる。電気炉Ａは、分割された高温加熱
部３１・３２・３３（図面では発熱体はＭｏＳｉ系）に
なり、高温加熱部３２と高温加熱部３３の間には冷却体
３４があり、この部分で最適な温度勾配が設定される。
符号３５及び符号３６は結晶の保温筒を示し、育成後の
結晶は結晶保温筒３５と結晶保温筒３６の位置に置か
れ、亀裂が入らないように５００ｍｍで１１００℃以上
に保たれている部分である。符号４０・符号４１・符号
４２・符号４３及び符号４４は、各加熱部３１・３２・
３３の温度制御用の熱電対であり、符号３９は結晶から
蒸発するＺｎＯ成分や発熱体からでる不純物が結晶部に
入らないようにする分離するアルミナ管である。符号３
７は電気炉の炉のケ−スであり、符号４９は炉対部であ
る。FIG. 2 is a cross sectional view of a continuous feed type ferrite single crystal manufacturing apparatus according to the present invention. In this embodiment, as shown in FIG. 2, the platinum growth crucible 46 is supported by an alumina support tube 45, and the support tube 45 supports the support base 50.
The support base 50 can be moved up and down by the drive unit 48. The electric furnace A is divided into high-temperature heating parts 31, 32, 33 (in the drawing, the heating element is a MoSi system), and a cooling body 34 is provided between the high-temperature heating part 32 and the high-temperature heating part 33. The optimum temperature gradient is set.
Reference numerals 35 and 36 denote crystal heat-retaining cylinders, and the grown crystal is placed at the positions of the crystal heat-retaining cylinders 35 and 36 and kept at 1100 ° C. or higher at 500 mm to prevent cracking. Is. Reference numeral 40, reference numeral 41, reference numeral 42, reference numeral 43, and reference numeral 44 indicate heating portions 31, 32,
Reference numeral 39 is a thermocouple for temperature control of 33, and reference numeral 39 is an alumina tube for separating ZnO components evaporated from the crystal and impurities generated from the heating element so as not to enter the crystal part. Code 3
Reference numeral 7 is a case of an electric furnace, and reference numeral 49 is a furnace pair.
【０００８】図１及び図２には明示されていないが、炉
の上部には原料の連続供給装置があり、育成量に見合う
原料が自動的に供給される。結晶を更に長尺にするため
には、２ゾ−ンの発熱対部を長くし、保温筒３５及び保
温筒３６の保温筒の長さを結晶の長さに見合うようにす
れば長尺の結晶を形成することができる。そして、本装
置の高温加熱部３１・３２・３３の発熱体は１８００℃
以上に加熱することができるものである。Although not clearly shown in FIGS. 1 and 2, there is a continuous feed device for the raw material in the upper part of the furnace, and the raw material corresponding to the growing amount is automatically fed. In order to make the crystal longer, the length of the heating zone of the two zones is made longer and the length of the heat retaining tubes of the heat retaining tubes 35 and 36 is adjusted to the length of the crystal. Crystals can be formed. And the heating element of the high temperature heating part 31, 32, 33 of this device is 1800 ° C.
The above can be heated.
【０００９】次に結晶を形成するための実施条件につい
て述べる。 育成結晶： マンガン亜鉛フェライト ＭｎＯ，ＺｎＯ，Ｆｅ2Ｏ3 育成法方： ブリッジマン法 育成るつぼ：白金製、φ７０ ５００ 以上 育成温度： １６６０ （従来方法では１６７０ ） 炉 芯 管： １００／ ９０ １０００ 育成速度： ２．５ ／ｈ（従来は、２．０ ／Ｈ） 温度勾配： ３０ ／ 雰 囲 気： 空気中 原料連続 供給方法： ペレット粉体原料供給方法 充填原料 形状： 粉体（約０．１ｇｒ） 連続充填量：０．８０１ｇｒ／ｍｉｎ． 加熱ゾ−ン 数： 高温部３ゾ−ン 保温部２ゾ−ン 冷却体： 空気ガス冷却方法 温度制御： デジタルプログラム制御 熱電対帰還制御 育成駆動部：低速でスム−ズに駆動する精密駆動部Next, the operating conditions for forming crystals will be described. Growth crystal: Manganese zinc ferrite MnO, ZnO, Fe 2 O 3 Growth method: Bridgman method Growth crucible: Platinum, φ70 500 or more Growth temperature: 1660 (1670 in conventional method) Core tube: 100/90 1000 Growth rate : 2.5 / h (previously 2.0 / H) Temperature gradient: 30 / Atmosphere: In air Raw material continuous feeding method: Pellet powder raw material feeding method Filling raw material shape: Powder (about 0.1 gr) Continuous filling amount: 0.801 gr / min. Number of heating zones: 3 zones of high temperature section 2 zones of heat retaining section Coolant: Air gas cooling method Temperature control: Digital program control Thermocouple feedback control Growth drive section: Precision drive section that drives smoothly at low speed
【００１０】図３は、Ｍｎｚｎフェライト単結晶の結晶
長と組成分布図である。図３が示すのは以下の内容であ
る。即ち、本来、原料連続供給法の特徴は、融液である
液体量を常に一定に保持するために、結晶化する量と同
一成分比を有する原料の供給量を一定にすることによ
り、多成分系の結晶育成に置いて、結晶の夫々の部署で
一定成分にすることができる。つまり、結晶化する量と
原料を連続的に一定量供給させ、同一にすることであ
る。最初は、るつぼ内に一定量の原料をいれ、これを加
熱溶融させて、いくらかを結晶育成した後に、適当な融
液量で原料の連続供給を開始する。実際は、従来法のよ
うに最初は融液量と結晶である固体の量が一定である
が、暫く経って結晶化が進んでくると、結晶である固体
量が増加し、固体の断熱効果により、液体量が増加し一
定成分領域が少なくなる。本装置は、この欠点を解決す
る為に開発されたもので、発熱体にＭｏＳｉ系の高温発
熱体を炉芯管の周囲に配置し、更に、３ゾ−ン に分割
制御し、温度勾配を大きくすることにより、結晶化後の
固体の断熱効果を最初から一定にし、結晶量が大きくな
っても、その効果が変らないようにすることにより、一
定成分領域を拡大することができた。FIG. 3 is a crystal length and composition distribution chart of the Mnnz ferrite single crystal. FIG. 3 shows the following contents. That is, originally, the feature of the continuous feed method for raw materials is that, in order to always keep the amount of liquid, which is a melt, constant, the feed amount of raw materials having the same composition ratio as the amount of crystallization is made constant, so that multi-component In the crystal growth of the system, it is possible to make a constant component in each department of the crystal. That is, the amount of crystallization and the amount of raw material are continuously supplied in a constant amount so that they are the same. First, a certain amount of raw material is put into the crucible, and this is heated and melted to grow some crystals, and then continuous supply of the raw material is started with an appropriate amount of melt. Actually, the amount of melt and the amount of solids that are crystals are constant at first as in the conventional method, but when crystallization progresses for a while, the amount of solids that are crystals increases, and due to the adiabatic effect of the solids. , The amount of liquid increases and the constant component area decreases. This device was developed to solve this drawback. A MoSi-based high-temperature heating element is placed around the furnace core tube as a heating element, and the temperature gradient is controlled by dividing it into three zones. By increasing the amount, the adiabatic effect of the solid after crystallization was made constant from the beginning, and even if the amount of crystals was increased, the effect was not changed, so that the constant component region could be expanded.
【００１１】[0011]
【発明の効果】本発明は、以上説明したような構成であ
るから以下の効果が得られる。第１に、大型で長尺な単
結晶で、かつ酸化鉄、酸化マンガン、酸化亜鉛の組成が
一定であり、方位のずれであるサブグレ−ンが少なく、
白金の混入がなく、亀裂がないこと、更にＣｒ等の磁気
特性に影響する磁性不純物がない単結晶を製造できると
の効果が得られる。第２に、良質で生産原価の廉価な単
結晶を製造できるとの効果が得られる。Since the present invention has the above-described structure, the following effects can be obtained. First, it is a large and long single crystal, and the composition of iron oxide, manganese oxide, and zinc oxide is constant, and there are few subgrains that are misalignment of orientation.
It is possible to obtain an effect that a single crystal can be produced in which platinum is not mixed, cracks are not generated, and magnetic impurities such as Cr that influence magnetic properties are not produced. Secondly, it is possible to obtain the effect that a single crystal of high quality and low production cost can be manufactured.
【図１】本発明である原料連続供給式フェライト単結晶
製造装置の電気炉部の正面概略図。FIG. 1 is a schematic front view of an electric furnace section of a continuous raw material supply type ferrite single crystal production apparatus according to the present invention.
【図２】本発明に関わる原料連続供給式フェライト単結
晶製造装置の横断面図。FIG. 2 is a cross-sectional view of a continuous feed type ferrite single crystal manufacturing apparatus according to the present invention.
【図３】Ｍｎｚｎフェライト単結晶の結晶長と組成分布
図。FIG. 3 is a crystal length and composition distribution chart of a Mnnz ferrite single crystal.
１ 架台 ２ 炉支持板 ３ 炉止め板 ４ 炉体ベ−ス板 ５ 駆動機構部 ６ 駆動ボ−ルネジ ７ 雰囲気フランジ ８ ルツボ支持管 ９ 電気炉 １０ 発熱体 １１ るつぼ １２ 育成後の結晶 １３ 融液 １４ 供給用ガイド管 １５ ノス゛ル １６ 原料容器 １７ 原料 １８ 放射温度計 １９ 鏡 ２０ 雲台 ２１ 容器支持台 ２２ ガイド管 ２３ るつぼ受台 ３１ 高温加熱部 ３２ 高温加熱部 ３３ 高温加熱部 ３４ 冷却体 ３５ 結晶保温筒 ３６ 結晶保温筒 ３７ ケ−ス ３８ 断熱材 ３９ アルミナ管 ４０ 温度制御用熱電対 ４１ 温度制御用熱電対 ４２ 温度制御用熱電対 ４３ 温度制御用熱電対 ４４ 温度制御用熱電対 ４５ アルミナ支持管 ４６ 白金育成るつぼ ４７ 対熱製蛇腹 ４８ 駆動部 ４９ 炉体部 ５０ 支持台 1 Platform 2 Furnace Support Plate 3 Furnace Stop Plate 4 Furnace Base Plate 5 Drive Mechanism Section 6 Drive Ball Screw 7 Atmosphere Flange 8 Crucible Support Tube 9 Electric Furnace 10 Heating Element 11 Crucible 12 Crystals 13 After Growth 13 Melt 14 Supply guide tube 15 Nozzle 16 Raw material container 17 Raw material 18 Radiation thermometer 19 Mirror 20 Pan head 21 Container support stand 22 Guide tube 23 Crucible receiving stand 31 High temperature heating section 32 High temperature heating section 33 High temperature heating section 34 Cooling body 35 Crystal warming tube 36 Crystal Insulation Cylinder 37 Case 38 Insulation Material 39 Alumina Tube 40 Temperature Control Thermocouple 41 Temperature Control Thermocouple 42 Temperature Control Thermocouple 43 Temperature Control Thermocouple 44 Temperature Control Thermocouple 45 Alumina Support Tube 46 Platinum Raising crucible 47 Anti-heat bellows 48 Drive section 49 Furnace body section 50 Supporting stand
Claims (3)
るつぼと、この白金育成るつぼ内に電気炉上部から連続
的に粒状のフェライト粉体原料を供給する装置を有する
連続供給式フェライト単結晶育成装置において、発熱部
にＭｏＳｉ系の発熱体を用い、少なくとも３ゾ−ンに独
立した発熱部に分割され、その間を空気等の冷却ガスで
熱を奪う機構を有することを特徴とする原料連続供給式
フェライト単結晶製造装置。1. A continuous feed type ferrite single crystal having a heating furnace, a platinum growing crucible arranged inside thereof, and a device for continuously supplying granular ferrite powder raw material into the platinum growing crucible from the upper part of the electric furnace. In the growing apparatus, a MoSi-based heating element is used for the heating section, the heating section is divided into at least three independent heating sections, and there is a mechanism for removing heat between them by a cooling gas such as air. Supply type ferrite single crystal manufacturing equipment.
却する構造を有することを特徴とする原料連続供給式フ
ェライト単結晶製造装置。2. A continuous raw material supply type ferrite single crystal manufacturing apparatus having a structure in which a space between the divided heat generating portions is cooled by a liquid such as water.
発熱体を用いたことを特徴とする請求項１記載の原料連
続供給式フェライト単結晶製造装置。 【請求項３】 加熱温度を１８００℃以上にできる高温
発熱体を用いたことを特徴とする請求項２記載の原料連
続供給式フェライト単結晶製造装置。3. The continuous raw material supply type ferrite single crystal manufacturing apparatus according to claim 1, wherein a high temperature heating element capable of heating at a temperature of 1800 ° C. or higher is used. 3. The continuous feed type ferrite single crystal production apparatus according to claim 2, wherein a high temperature heating element capable of heating at a temperature of 1800 ° C. or higher is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6238408A JPH0873299A (en) | 1994-09-06 | 1994-09-06 | Continuous raw material supply type apparatus for producing ferrite single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6238408A JPH0873299A (en) | 1994-09-06 | 1994-09-06 | Continuous raw material supply type apparatus for producing ferrite single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0873299A true JPH0873299A (en) | 1996-03-19 |
Family
ID=17029770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6238408A Ceased JPH0873299A (en) | 1994-09-06 | 1994-09-06 | Continuous raw material supply type apparatus for producing ferrite single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0873299A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008150223A (en) * | 2006-12-14 | 2008-07-03 | Tdk Corp | Raw material supply device in pulling down system |
| CN106544722A (en) * | 2016-11-04 | 2017-03-29 | 曲靖师范学院 | A kind of vertical automatization's grower of crystal |
| JP2018048043A (en) * | 2016-09-21 | 2018-03-29 | 国立大学法人信州大学 | Manufacturing apparatus for lithium tantalate crystal, and manufacturing method for lithium tantalate crystal |
-
1994
- 1994-09-06 JP JP6238408A patent/JPH0873299A/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008150223A (en) * | 2006-12-14 | 2008-07-03 | Tdk Corp | Raw material supply device in pulling down system |
| JP2018048043A (en) * | 2016-09-21 | 2018-03-29 | 国立大学法人信州大学 | Manufacturing apparatus for lithium tantalate crystal, and manufacturing method for lithium tantalate crystal |
| CN106544722A (en) * | 2016-11-04 | 2017-03-29 | 曲靖师范学院 | A kind of vertical automatization's grower of crystal |
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