JPH01313384A - Method for growing silicon single crystal - Google Patents
Method for growing silicon single crystalInfo
- Publication number
- JPH01313384A JPH01313384A JP14526088A JP14526088A JPH01313384A JP H01313384 A JPH01313384 A JP H01313384A JP 14526088 A JP14526088 A JP 14526088A JP 14526088 A JP14526088 A JP 14526088A JP H01313384 A JPH01313384 A JP H01313384A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- silicon
- pulled
- residence time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title description 8
- 238000002109 crystal growth method Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、ＣＺ法によるシリコン単結晶育成方法に係わ
り、特に積層欠陥の発生を効果的に抑えることのできる
改良に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a silicon single crystal growth method using the CZ method, and particularly relates to improvements that can effectively suppress the occurrence of stacking faults.
「従来の技術」
ＣＺ法により製造されたシリコン単結晶においては、半
導体デバイス工程で種々の高温処理が施される際に積層
欠陥が発生し、これら積層欠陥が半導体デバイスの絶縁
耐圧不良や、キャリアのライフタイム減少を引き起こす
ことが知られている。``Prior art'' In silicon single crystals manufactured by the CZ method, stacking faults occur when various high-temperature treatments are performed in the semiconductor device process, and these stacking faults cause dielectric breakdown voltage defects in semiconductor devices and carrier failure. is known to cause a decrease in the lifetime of
従来、上記積層欠陥発生の主因は、単結晶中に過飽和に
固溶する酸素であると考えられている。Conventionally, it has been thought that the main cause of the above-mentioned stacking faults is oxygen dissolved in supersaturated solid solution in the single crystal.
すなわち、Ｃ２単結晶に高温処理を施すと、この固溶酸
素から微細なＳｉｎ、等の酸素析出物が発生して粗大化
し、この酸素析出物から放出された格子間シリコンによ
り、二次欠陥としての積層欠陥が発生するのである。In other words, when a C2 single crystal is subjected to high-temperature treatment, fine oxygen precipitates such as Sin are generated from the solid solution oxygen and become coarse, and interstitial silicon released from the oxygen precipitates causes secondary defects to form. Stacking faults occur.
本出願人らは先に、特開昭６１−２０１６９２号公報に
おいて、酸素析出物の発生を抑えることのできるシリコ
ン単結晶育成方法を提案した。The present applicants previously proposed a silicon single crystal growth method capable of suppressing the generation of oxygen precipitates in Japanese Patent Application Laid-Open No. 61-201692.
この方法は、引き上げ中のシリコン単結晶の所定帯域に
温度制御装置を設け、シリコン単結晶をその全長に亙っ
て、１１００〜９００℃の温度範囲で３時間以上保持す
ることを特徴とし、これにより酸素析出物の発生を抑え
、ひいては半導体デバイス工程における高温処理時の積
層欠陥発生を低減するというものであった。This method is characterized by providing a temperature control device in a predetermined zone of the silicon single crystal being pulled, and maintaining the silicon single crystal over its entire length at a temperature range of 1100 to 900°C for 3 hours or more. The idea was to suppress the generation of oxygen precipitates and, in turn, reduce the occurrence of stacking faults during high-temperature processing in semiconductor device processes.
「発明が解決しようとする課題」
ところが、本発明者らのその後の研究によると、前記育
成方法では確かに酸素析出物の発生は抑えられるものの
、高温処理後の積層欠陥密度はむしろ増大することが確
認された。``Problems to be Solved by the Invention'' However, subsequent research by the present inventors revealed that although the growth method described above does indeed suppress the generation of oxygen precipitates, the stacking fault density after high-temperature treatment actually increases. was confirmed.
そこで本発明者らは、積層欠陥発生機構について再び詳
細な検討を試み、この場合に生じる積層欠陥は、酸素析
出物の粗大化で放出された格子間シリコンにより形成さ
れたものではないことを突き止めた。Therefore, the present inventors once again conducted a detailed study on the stacking fault generation mechanism, and found that the stacking faults generated in this case were not formed by interstitial silicon released due to coarsening of oxygen precipitates. Ta.
そこで、本発明者らは新たに、種々異なる温度条件で単
結晶育成を試み、シリコン単結晶が８５０〜ｉ ｏ ｓ
ｏ ’ｃの温度範囲を通過するのに要する滞留時間を
１４０分以下とした場合には、単結晶中の積層欠陥密度
を低減可能であることを突き止めた。Therefore, the present inventors newly attempted to grow single crystals under various temperature conditions, and the silicon single crystals grew from 850 to 100 s.
It has been found that the stacking fault density in the single crystal can be reduced if the residence time required to pass through the o'c temperature range is 140 minutes or less.
「課題を解決するための手段」
本発明は上記の知見に基づいてなされたもので、引き上
げられるシリコン単結晶の所定帯域に温度調節機構を設
ける等の手段により、この単結晶の８５０〜１ｏｓｏ℃
の温度範囲での滞留時間を１４０分以下とすることを特
徴とする。"Means for Solving the Problems" The present invention has been made based on the above knowledge, and by means such as providing a temperature control mechanism in a predetermined zone of the silicon single crystal to be pulled,
The residence time in the temperature range is 140 minutes or less.
なお、８５０〜１０５０℃での滞留時間が１４０分を超
えた場合、または滞留時間が１４０分以下であっても温
度範囲が上下にずれた場合には、いずれも高温処理時に
発生する積層欠陥の密度が高くなり、従来の問題が解決
できない。In addition, if the residence time at 850 to 1050℃ exceeds 140 minutes, or if the temperature range shifts up or down even if the residence time is 140 minutes or less, stacking faults that occur during high-temperature processing may occur. Due to the increased density, conventional problems cannot be solved.
「実施例」 次に、実施例を挙げて本発明の効果を実証する。"Example" Next, examples will be given to demonstrate the effects of the present invention.
図は、実験で使用したシリコン単結晶育成装置を示し、
図中符号１は容器、２は回転軸、３はシリコン溶湯Ｙを
保持する石英ルツボ、４はヒータ、５は保温筒、６は引
き上げ軸、７は種結晶である。The figure shows the silicon single crystal growth equipment used in the experiment.
In the figure, numeral 1 is a container, 2 is a rotating shaft, 3 is a quartz crucible for holding the molten silicon Y, 4 is a heater, 5 is a heat-insulating tube, 6 is a pulling shaft, and 7 is a seed crystal.
また８は冷却機構で、引き上げ中の単結晶Ｔの所定帯域
を適宜冷やし、冷却速度を調節す、る役目を果を二す。Further, 8 is a cooling mechanism, which serves to appropriately cool a predetermined zone of the single crystal T being pulled and adjust the cooling rate.
以上の装置を用いて、１ ｍｍ１分の引き上げ速度で、
１５５ｍｍｄＸ６００ｍｍ長のシリコン単結晶を製造し
た。なお、冷却機構８としては、リング状の金属反射板
や水冷ジャケット等を温度により選択して使用した。そ
して、６００〜８５０℃、８５０〜１０５０°ｃ、ｔｏ
ｓｏ〜１４００℃の各温度範囲における単結晶の滞留時
間を、全長に互って均一となるように調節した。Using the above device, at a pulling speed of 1 mm/minute,
A silicon single crystal with a length of 155 mm and a length of 600 mm was manufactured. As the cooling mechanism 8, a ring-shaped metal reflection plate, a water cooling jacket, etc. were selected and used depending on the temperature. and 600-850°C, 850-1050°C, to
The residence time of the single crystal in each temperature range from so to 1400° C. was adjusted so as to be uniform over the entire length.
次に、こうして得られた８本の単結晶からウェハを切り
出し、これらウェハを２℃／分で１１００℃まで加熱し
、１時間保持後、冷却する高温処理を施し、ウェハに生
じた積層欠陥密度を測定しｔこ 。Next, wafers were cut from the eight single crystals obtained in this way, and these wafers were heated at 2°C/min to 1100°C, held for 1 hour, and then cooled. Measure it.
上表の結果から明らかなように、実施例１．２により製
造された単結晶では、ウェハにおける積層欠陥の発生が
著しく少ないのに対して、８５０〜１０５０℃の範囲で
の滞留時間が１４０分より長い、あるいは滞留時間が１
４０分以下の温度範囲が上下にずれたものでは、いずれ
も高い密度で積層欠陥が発生している。As is clear from the results in the table above, in the single crystal manufactured in Example 1.2, the occurrence of stacking faults in the wafer was extremely small, while the residence time in the range of 850 to 1050°C was 140 minutes. longer or residence time 1
In all cases where the temperature range of 40 minutes or less is shifted upward or downward, stacking faults occur at a high density.
「発明の効果」
以上説明したように、本発明のシリコン単結晶育成方法
によれば、半導体デバイス工程での高温処理を施しても
、積層欠陥の発生が少ない高品質のシリコン単結晶を製
造することが可能である。"Effects of the Invention" As explained above, according to the silicon single crystal growth method of the present invention, high-quality silicon single crystals with few stacking faults can be produced even when subjected to high-temperature treatment in the semiconductor device process. Is possible.
図は、本発明の実施例で使用したシリコン単結晶育成装
置を示す縦断面図である。
３・・・石英ルツボ、 ４・・・ヒータ、６・・・引
き上げ軸、 ７・・・種結晶、８・・・冷却機構、
Ｔ・・・シリコン単結晶。The figure is a longitudinal cross-sectional view showing a silicon single crystal growth apparatus used in an example of the present invention. 3... Quartz crucible, 4... Heater, 6... Pulling shaft, 7... Seed crystal, 8... Cooling mechanism,
T...Silicon single crystal.
Claims (1)
リコン単結晶育成方法において、 引き上げられたシリコン単結晶の８５０〜１０５０℃の
温度範囲における滞留時間を、１４０分以下とすること
を特徴とするシリコン単結晶育成方法。[Claims] In a silicon single crystal growth method in which a seed crystal is immersed in molten silicon and the single crystal is pulled up, the residence time of the pulled silicon single crystal in a temperature range of 850 to 1050°C is 140 minutes or less. A silicon single crystal growth method characterized by:
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63145260A JP2612033B2 (en) | 1988-06-13 | 1988-06-13 | Silicon single crystal growth method |
| US07/313,799 US4981549A (en) | 1988-02-23 | 1989-02-22 | Method and apparatus for growing silicon crystals |
| DE3905626A DE3905626B4 (en) | 1988-02-23 | 1989-02-23 | Device for growing silicon crystals |
| US07/933,879 US5264189A (en) | 1988-02-23 | 1992-08-21 | Apparatus for growing silicon crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63145260A JP2612033B2 (en) | 1988-06-13 | 1988-06-13 | Silicon single crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01313384A true JPH01313384A (en) | 1989-12-18 |
| JP2612033B2 JP2612033B2 (en) | 1997-05-21 |
Family
ID=15381018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63145260A Expired - Lifetime JP2612033B2 (en) | 1988-02-23 | 1988-06-13 | Silicon single crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2612033B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006315950A (en) * | 1996-09-12 | 2006-11-24 | Siltronic Ag | Method for manufacturing silicon semiconductor wafer having low defect density |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101555520B1 (en) * | 2014-01-28 | 2015-09-24 | 주식회사 엘지실트론 | A method of growing a single crystal and a epitaxial wafer made of the single crystal using the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051083A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS5645894A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS57160996A (en) * | 1981-03-31 | 1982-10-04 | Toshiba Corp | Method and apparatus for growing si single crystal |
| JPS60191095A (en) * | 1984-03-07 | 1985-09-28 | Toshiba Corp | Method and device for manufacturing silicon single crystal |
| JPS63285187A (en) * | 1987-05-15 | 1988-11-22 | Toshiba Ceramics Co Ltd | Apparatus for pulling up silicon single crystal |
-
1988
- 1988-06-13 JP JP63145260A patent/JP2612033B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051083A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS5645894A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS57160996A (en) * | 1981-03-31 | 1982-10-04 | Toshiba Corp | Method and apparatus for growing si single crystal |
| JPS60191095A (en) * | 1984-03-07 | 1985-09-28 | Toshiba Corp | Method and device for manufacturing silicon single crystal |
| JPS63285187A (en) * | 1987-05-15 | 1988-11-22 | Toshiba Ceramics Co Ltd | Apparatus for pulling up silicon single crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006315950A (en) * | 1996-09-12 | 2006-11-24 | Siltronic Ag | Method for manufacturing silicon semiconductor wafer having low defect density |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2612033B2 (en) | 1997-05-21 |
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