JPS57160996A - Method and apparatus for growing si single crystal - Google Patents
Method and apparatus for growing si single crystalInfo
- Publication number
- JPS57160996A JPS57160996A JP4621781A JP4621781A JPS57160996A JP S57160996 A JPS57160996 A JP S57160996A JP 4621781 A JP4621781 A JP 4621781A JP 4621781 A JP4621781 A JP 4621781A JP S57160996 A JPS57160996 A JP S57160996A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- single crystal
- hot zone
- distribution
- pulling tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain an extremely homogeneous Si single crystal of high quality by overlapping a pulling tube and a hot zone, comparing the measured value of the surface temp. of Si to a theoretically calculated internal temp. destribution of an Si single crystal, and controlling the temp. of the pulling tube so as to make the internal temp. distribution of the Si uniform.
CONSTITUTION: In order that the passing time of a grown Si single crystal in a hot zone especially of 900W600°C is made constant with respect to each range of the total length of the crystal, an overlap ΔX2 is provided to the relative position between the pulling tube 91 of a pulling apparatus and the hot zone forming body 92. The surface temp. of Si is measured at a renge just below an Si seed crystal or further measured at the inlet of the hot zone and other place, the measured value is compared to a theoretically calculated internal temp. distribution of the Si single crystal, and a single crystal is grown while controlling the temp. of the pulling tube so as to make the internal temp. distribution of the Si uniform.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4621781A JPS57160996A (en) | 1981-03-31 | 1981-03-31 | Method and apparatus for growing si single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4621781A JPS57160996A (en) | 1981-03-31 | 1981-03-31 | Method and apparatus for growing si single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57160996A true JPS57160996A (en) | 1982-10-04 |
Family
ID=12740932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4621781A Pending JPS57160996A (en) | 1981-03-31 | 1981-03-31 | Method and apparatus for growing si single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57160996A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201692A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | Method for pulling and growing silicon single crystal with less generation of defect |
| JPH01313384A (en) * | 1988-06-13 | 1989-12-18 | Mitsubishi Metal Corp | Method for growing silicon single crystal |
-
1981
- 1981-03-31 JP JP4621781A patent/JPS57160996A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201692A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | Method for pulling and growing silicon single crystal with less generation of defect |
| JPH0367994B2 (en) * | 1985-03-04 | 1991-10-24 | Mitsubishi Materiaru Kk | |
| JPH01313384A (en) * | 1988-06-13 | 1989-12-18 | Mitsubishi Metal Corp | Method for growing silicon single crystal |
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