JPS55158195A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS55158195A
JPS55158195A JP6638179A JP6638179A JPS55158195A JP S55158195 A JPS55158195 A JP S55158195A JP 6638179 A JP6638179 A JP 6638179A JP 6638179 A JP6638179 A JP 6638179A JP S55158195 A JPS55158195 A JP S55158195A
Authority
JP
Japan
Prior art keywords
temp
melt
point
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6638179A
Other languages
Japanese (ja)
Inventor
Toshiharu Ito
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6638179A priority Critical patent/JPS55158195A/en
Publication of JPS55158195A publication Critical patent/JPS55158195A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high quality single crystal of a fixed diameter by controlling the relative position between a crucible and a high frequency induction coil for heating as the surface of a melt lowers to always maintain temp. gradients right above and just under the melt at proper values when a single crystal is grown by a density difference method.
CONSTITUTION: When single crystal 5 is grown under seed crystal 4, the surface of melt 3 lowers by distance (l), yet simultaneously high frequency induction coil 1 is lowered by (l). Thus, the temp. of A2 point at the melt surface and temp. gradients right above and just under A2 point are maintained at proper values about equal to the temp. of A1 point and temp. gradients right above and just under A1 point in the early stage. The relative position between coil 1 and crucible 2 is controlled continuously or intermittently. Radius (r) of crystal 5 is shown by equation I, supposing the density of melt 3 to be dL, the density of crystal 5dS and the radius of crucible 2rc.
COPYRIGHT: (C)1980,JPO&Japio
JP6638179A 1979-05-29 1979-05-29 Manufacture of single crystal Pending JPS55158195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6638179A JPS55158195A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6638179A JPS55158195A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Publications (1)

Publication Number Publication Date
JPS55158195A true JPS55158195A (en) 1980-12-09

Family

ID=13314186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6638179A Pending JPS55158195A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS55158195A (en)

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