JPS56104794A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS56104794A JPS56104794A JP455680A JP455680A JPS56104794A JP S56104794 A JPS56104794 A JP S56104794A JP 455680 A JP455680 A JP 455680A JP 455680 A JP455680 A JP 455680A JP S56104794 A JPS56104794 A JP S56104794A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- polycrystal
- growth
- top end
- melted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: After seeding is effected by melting the top end of the seed crystal and bringing into contact with the melted liquid to be crystallized, the growth of crystal is started to produce a large-diameter single crystal with no dislocation readily without forming the neck part according to the Dash-neck method.
CONSTITUTION: For example, in the growth of single crystal by the floating method where a polycrystal 5 seeded with a crystal 4 is subjected to the zone melting crtstallization using an inductive heating coil 1 to shift the zone melting part relatively to the polycrystal 5, a ring heater for preheating the crystal 2 which is fitted on the top end of holder 3 and is opened at one side is used to heat the seed crystal 4 and simultaneously an induction heating coil 1 is operated to form a melted part 7 on the top end of the seed crystal 4. Then, the melted part 7 is brought into contact with the melted part 6 of polycrystal 5 to effect seeding. Then, holder is made to revolve around the axis 3' and the heater 2 is removed from the space beneath the coil 1 to start the growth of a crystal.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP455680A JPS5938189B2 (en) | 1980-01-21 | 1980-01-21 | Single crystal manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP455680A JPS5938189B2 (en) | 1980-01-21 | 1980-01-21 | Single crystal manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56104794A true JPS56104794A (en) | 1981-08-20 |
| JPS5938189B2 JPS5938189B2 (en) | 1984-09-14 |
Family
ID=11587314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP455680A Expired JPS5938189B2 (en) | 1980-01-21 | 1980-01-21 | Single crystal manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5938189B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932002A (en) * | 1997-08-28 | 1999-08-03 | Sumitomo Sitix Corporation | Seed crystals for pulling a single crystal and methods using the same |
| DE102010040464A1 (en) | 2010-09-09 | 2012-03-15 | Wacker Chemie Ag | Producing a dislocation-free monocrystalline silicon rod, comprises continuously melting a polycrystalline rod, inoculating the molten material with a monocrystalline seed crystal, and recrystallizing into a single crystal rod |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0357195U (en) * | 1989-10-07 | 1991-05-31 |
-
1980
- 1980-01-21 JP JP455680A patent/JPS5938189B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932002A (en) * | 1997-08-28 | 1999-08-03 | Sumitomo Sitix Corporation | Seed crystals for pulling a single crystal and methods using the same |
| DE102010040464A1 (en) | 2010-09-09 | 2012-03-15 | Wacker Chemie Ag | Producing a dislocation-free monocrystalline silicon rod, comprises continuously melting a polycrystalline rod, inoculating the molten material with a monocrystalline seed crystal, and recrystallizing into a single crystal rod |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5938189B2 (en) | 1984-09-14 |
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