JPS57183393A - Apparatus for growing single crystal - Google Patents
Apparatus for growing single crystalInfo
- Publication number
- JPS57183393A JPS57183393A JP6521081A JP6521081A JPS57183393A JP S57183393 A JPS57183393 A JP S57183393A JP 6521081 A JP6521081 A JP 6521081A JP 6521081 A JP6521081 A JP 6521081A JP S57183393 A JPS57183393 A JP S57183393A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- heat source
- heating means
- temperature
- outer circumference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To provide a single crystal growing apparatus giving a uniform and high quality single crystal, by placing the second heat source along the outer circumference of the zone corresponding to the moving range of the pulling device in the single crystal pulling chamber.
CONSTITUTION: The single crystal pulling chamber 8 is furnished with the first heat source 6 for heating the molten liquid 3 in the crucible 4 and the second single crystal heating means 14 at the outer circumference of the zone corresponding to the moving range of the single crystal pulling device 9. The single crystal heating means 14 is constructed of the second heat source 11, the heat- shielding plate 12 enclosing the heat source 11, and the quartz tube inserted into the heat source 11. The temperature of the single crystal 2 pulled up with the device 9 can be maintained at a constant level by the heat source 11 of the heating means 14. The temperature of the heat source 11 is preferably 1,200± 150°C. The apparatus enables the control of the temperature distribution, cooling process, and thermal history of the single crystal rod 2 during growth, and gives a uniform single crystal 2.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6521081A JPS57183393A (en) | 1981-05-01 | 1981-05-01 | Apparatus for growing single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6521081A JPS57183393A (en) | 1981-05-01 | 1981-05-01 | Apparatus for growing single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57183393A true JPS57183393A (en) | 1982-11-11 |
Family
ID=13280317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6521081A Pending JPS57183393A (en) | 1981-05-01 | 1981-05-01 | Apparatus for growing single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183393A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201692A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | Method for pulling and growing silicon single crystal with less generation of defect |
| CN110923806A (en) * | 2019-12-24 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and preparation method of single crystal silicon rod |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device and method |
-
1981
- 1981-05-01 JP JP6521081A patent/JPS57183393A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201692A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | Method for pulling and growing silicon single crystal with less generation of defect |
| JPH0367994B2 (en) * | 1985-03-04 | 1991-10-24 | Mitsubishi Materiaru Kk | |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device and method |
| CN110923806A (en) * | 2019-12-24 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and preparation method of single crystal silicon rod |
| CN110923806B (en) * | 2019-12-24 | 2021-07-23 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and preparation method of single crystal silicon rod |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3591348A (en) | Method of growing crystalline materials | |
| JPS6465086A (en) | Apparatus and process for producing single crystal rod | |
| JPS57183393A (en) | Apparatus for growing single crystal | |
| JPS5645894A (en) | Reducing method for defect of silicon single crystal | |
| JPS57205397A (en) | Method and apparatus for growing single crystal | |
| JPS54157780A (en) | Production of silicon single crystal | |
| JPS55126597A (en) | Single crystal growing method | |
| JPS5547300A (en) | Crystal pulling device | |
| JPS5582434A (en) | Method of epitaxial growth at liquid phase | |
| JPS55158196A (en) | Manufacture of single crystal | |
| JPS56104799A (en) | Production of si single crystal and device therefor | |
| JPS54128988A (en) | Preparation of single crystal | |
| JPS57179094A (en) | Method and apparatus for manufacturing single crystal | |
| JPS5632397A (en) | Silicon single crystal pulling apparatus | |
| JPS5515939A (en) | Production of single crystal | |
| JPS55144497A (en) | Preparing single crystal | |
| JPS57183394A (en) | Method and apparatus for pulling single crystal | |
| JPS5777098A (en) | Method and apparatus for growing znse in liquid phase | |
| JPS55140800A (en) | Crucible for crystal growing crucible device | |
| JPS6456394A (en) | Device for growing single crystal | |
| JPS5654299A (en) | Growing method of lead molybdate single crystal | |
| JPS5645893A (en) | Reducing method for defect of silicon single crystal | |
| JPS5688895A (en) | Growth of single crystal | |
| JPS6456393A (en) | Device for growing single crystal | |
| JPS55113695A (en) | Single crystal growing device |