JPS6456394A - Device for growing single crystal - Google Patents

Device for growing single crystal

Info

Publication number
JPS6456394A
JPS6456394A JP21293387A JP21293387A JPS6456394A JP S6456394 A JPS6456394 A JP S6456394A JP 21293387 A JP21293387 A JP 21293387A JP 21293387 A JP21293387 A JP 21293387A JP S6456394 A JPS6456394 A JP S6456394A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
outer tube
bridgman
uniformizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21293387A
Other languages
Japanese (ja)
Inventor
Harumichi Okamoto
Norio Yamamoto
Toru Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP21293387A priority Critical patent/JPS6456394A/en
Publication of JPS6456394A publication Critical patent/JPS6456394A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To strictly control heat flow during growth, to reduce the crystal structure defects, and to obtain a large-diameter single crystal by setting an outer tube for uniformizing the temp. in the circumferential direction surrounding a crucible inside the crucible heater of the Bridgman's single crystal growth device. CONSTITUTION:The crucible 1 of the Bridgman's single crystal growth device made of alumina, etc., and having a desired diameter is set on a crucible holder 3 made of Mo and whose protrusion 7 from the bottom end pierces the bottom plate 5 and penetrates into an internally-cooled lifting shaft 9, and the outer tube 14 for uniformizing the temp. in the circumferential direction made of graphite, alumina, etc., and fixed on the outer periphery of the bottom plate 5 is arranged in the vicinity of the crucible 1 to surround the crucible 1. The raw material M such as copper, ferrite, and AlP is then charged in the crucible 1, uniformly heated by a heater 10 through the outer tube 14, and melted. The lifting shaft 9 is gradually lowered while being internally cooled, and a high- quality single crystal is grown.
JP21293387A 1987-08-28 1987-08-28 Device for growing single crystal Pending JPS6456394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21293387A JPS6456394A (en) 1987-08-28 1987-08-28 Device for growing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21293387A JPS6456394A (en) 1987-08-28 1987-08-28 Device for growing single crystal

Publications (1)

Publication Number Publication Date
JPS6456394A true JPS6456394A (en) 1989-03-03

Family

ID=16630697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21293387A Pending JPS6456394A (en) 1987-08-28 1987-08-28 Device for growing single crystal

Country Status (1)

Country Link
JP (1) JPS6456394A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013503810A (en) * 2009-09-05 2013-02-04 クリステク カンパニー リミテッド Sapphire single crystal growth method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013503810A (en) * 2009-09-05 2013-02-04 クリステク カンパニー リミテッド Sapphire single crystal growth method and apparatus

Similar Documents

Publication Publication Date Title
US3953174A (en) Apparatus for growing crystalline bodies from the melt
JPS6465086A (en) Apparatus and process for producing single crystal rod
JPS6456394A (en) Device for growing single crystal
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
US3296036A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
JPS5645894A (en) Reducing method for defect of silicon single crystal
JPS5567596A (en) Single crystal growing method
JPS55126597A (en) Single crystal growing method
JPS6461382A (en) Apparatus for pulling up single crystal rod
JPS5930795A (en) Apparatus for pulling up single crystal
JPS5547300A (en) Crystal pulling device
JPS5537460A (en) Structure of crucible
JPS6456393A (en) Device for growing single crystal
JPS54128988A (en) Preparation of single crystal
JPS57183393A (en) Apparatus for growing single crystal
JPS6456392A (en) Method for growing single crystal
JPH02172885A (en) Production of silicon single crystal
JPH0566351B2 (en)
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPH024126Y2 (en)
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS5515939A (en) Production of single crystal
JPS60180993A (en) Pulling method of gaas single crystal
JPH02248399A (en) Method for growing mixed crystal-type compound semiconductor
JPH0873299A (en) Continuous raw material supply type apparatus for producing ferrite single crystal