JPS6456393A - Device for growing single crystal - Google Patents

Abstract

PURPOSE:To promote escape of heat from a bottom end, to reduce the crystal structure defects, and to obtain a large-diameter and high-quality crystal by controlling the ratio of the contact area between the crucible supporting and cooling rod member of the Bridgman's single crystal growth device and a crucible to the area of the crucible bottom end to lower than a specified value. CONSTITUTION:The crucible 1 of the Bridgman's single crystal growth device made of alumina, nitrides, graphite, silica, etc., is set on and completely attached to the crucible supporting and cooling rod member 3 made of a metal (e.g., Mo) having a m.p. higher than the working temp., placed on a bottom plate 5 made of Mo, whose protrusion 7 from the bottom end pierces the bottom plate 5 and penetrates into an internally-cooled lifting shaft 9, and wherein the contact area with the crucible 1 is controlled to <=50% of the bottom end area of the crucible 1. A single crystal forming metal M such as copper is then charged in the crucible 1, the crucible 1 is uniformly heated by a heater 10 through an outer tube 14 for uniformizing the temp. in the circumferential direction to melt the material M, the lifting shaft 9 is gradually lowered while being internally water-cooled, and a single crystal is grown.