JPS5582434A - Method of epitaxial growth at liquid phase - Google Patents
Method of epitaxial growth at liquid phaseInfo
- Publication number
- JPS5582434A JPS5582434A JP15614278A JP15614278A JPS5582434A JP S5582434 A JPS5582434 A JP S5582434A JP 15614278 A JP15614278 A JP 15614278A JP 15614278 A JP15614278 A JP 15614278A JP S5582434 A JPS5582434 A JP S5582434A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- liquid phase
- reflection plate
- melting temperature
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To accurately maintain a melting temperature at a prescribed level, by fitting a crystal substrate hanger of a dipping-type liquid phase epitaxial growing unit with a heat reflection plate of diameter slightly less than the inside diameter of a heating furnace.
CONSTITUTION: A heat reflection plate 8 made of platinum and having a diameter slightly less than the inside diameter of a heating furnace 2 is attached to a jig 5 for hanging a crystal substrate 6 in a dipping-type liquid phase epitaxial growing unit. Another heat reflection plate 9 made of platinum is provided inside the heating furnace 2 along its total circumference. As a result, even if the heat reflexibility of the crystal substrate 6 is large, the temperature distribution in the furnace is hard to change when the substrate is inserted into the furnace. Therefore, the fluctuation in a melting temperature is reduced. The melting temperature can be accurately maintained at a command when the temperature in the furnace is controlled through a thermocouple 7 and a heating coil 1. This results in reducing the scattering in the properties of grown crystal pieces.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614278A JPS5582434A (en) | 1978-12-15 | 1978-12-15 | Method of epitaxial growth at liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614278A JPS5582434A (en) | 1978-12-15 | 1978-12-15 | Method of epitaxial growth at liquid phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5582434A true JPS5582434A (en) | 1980-06-21 |
JPS6157696B2 JPS6157696B2 (en) | 1986-12-08 |
Family
ID=15621233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15614278A Granted JPS5582434A (en) | 1978-12-15 | 1978-12-15 | Method of epitaxial growth at liquid phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5582434A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235792A (en) * | 1984-05-04 | 1985-11-22 | Hitachi Cable Ltd | Device for liquid phase growth |
JPS62197393A (en) * | 1986-02-24 | 1987-09-01 | Hitachi Cable Ltd | Liquid-phase epitaxial growth method |
EP0676492A1 (en) * | 1994-04-07 | 1995-10-11 | Murata Manufacturing Co., Ltd. | Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
JP2003095630A (en) * | 2001-09-26 | 2003-04-03 | Sharp Corp | Silicon sheet and solar battery including the same |
CN103985657A (en) * | 2014-05-19 | 2014-08-13 | 上海先进半导体制造股份有限公司 | Barrel type furnace and method for manufacturing semiconductor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919767A (en) * | 1972-06-14 | 1974-02-21 | ||
JPS5166498A (en) * | 1974-12-04 | 1976-06-09 | Fujitsu Ltd | EKISOEPITAKISHARUSEIC CHOSOCHI |
-
1978
- 1978-12-15 JP JP15614278A patent/JPS5582434A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919767A (en) * | 1972-06-14 | 1974-02-21 | ||
JPS5166498A (en) * | 1974-12-04 | 1976-06-09 | Fujitsu Ltd | EKISOEPITAKISHARUSEIC CHOSOCHI |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235792A (en) * | 1984-05-04 | 1985-11-22 | Hitachi Cable Ltd | Device for liquid phase growth |
JPS62197393A (en) * | 1986-02-24 | 1987-09-01 | Hitachi Cable Ltd | Liquid-phase epitaxial growth method |
JPH0572360B2 (en) * | 1986-02-24 | 1993-10-12 | Hitachi Cable | |
EP0676492A1 (en) * | 1994-04-07 | 1995-10-11 | Murata Manufacturing Co., Ltd. | Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
JP2003095630A (en) * | 2001-09-26 | 2003-04-03 | Sharp Corp | Silicon sheet and solar battery including the same |
WO2003029143A1 (en) * | 2001-09-26 | 2003-04-10 | Sharp Kabushiki Kaisha | Silicon sheet and solar cell including the same |
CN103985657A (en) * | 2014-05-19 | 2014-08-13 | 上海先进半导体制造股份有限公司 | Barrel type furnace and method for manufacturing semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6157696B2 (en) | 1986-12-08 |
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