JPS6418988A - Single crystal growth unit - Google Patents
Single crystal growth unitInfo
- Publication number
- JPS6418988A JPS6418988A JP17450787A JP17450787A JPS6418988A JP S6418988 A JPS6418988 A JP S6418988A JP 17450787 A JP17450787 A JP 17450787A JP 17450787 A JP17450787 A JP 17450787A JP S6418988 A JPS6418988 A JP S6418988A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- melt
- pulling
- pulled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a single crystal of high crystallinity at increased crystal- pulling up rate, by providing a plurality of heat insulating plates around the crystal-lifting zone where a single crystal is pulled up from the melt. CONSTITUTION:A plurality of heat insulating plates 14 are arranged around the single crystal 10 in a prescribed distance. Thus, the heat to the single crystal 10 which is being pulled up with the means 13, namely the irradiation of the melt 5, from the heater 4 and from the crucible 2 which is heated with the heater 4, are effectively insulated. Further, the gradients of temperature distribution at the interface between the solid phase to be pulled up and the melt phase are made steep in both perpendicular and horizontal direction thereby the pulling up rate of the single crystal 10 can be increased. Moreover, SiO vapor taken out of the wall of the crucible 2 is dissipated through the gaps between the insulating plate passing through from the melt surface 5a, whereby the crystal defects caused by taking the SiO precipitates into the single crystal 10 can be avoided. This constitution can further increase the pulling up speed of the single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17450787A JPS6418988A (en) | 1987-07-13 | 1987-07-13 | Single crystal growth unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17450787A JPS6418988A (en) | 1987-07-13 | 1987-07-13 | Single crystal growth unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418988A true JPS6418988A (en) | 1989-01-23 |
Family
ID=15979713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17450787A Pending JPS6418988A (en) | 1987-07-13 | 1987-07-13 | Single crystal growth unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418988A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000462A1 (en) * | 1991-06-24 | 1993-01-07 | Komatsu Electronic Metals Co., Ltd. | Device for pulling up single crystal |
| JP2562245B2 (en) * | 1991-06-24 | 1996-12-11 | コマツ電子金属株式会社 | Single crystal pulling device |
| JP2007290961A (en) * | 2001-06-28 | 2007-11-08 | Samsung Electronics Co Ltd | Czochralski puller for manufacturing single crystal silicon ingot |
| JP2010202436A (en) * | 2009-03-02 | 2010-09-16 | Sumco Corp | Single crystal pulling apparatus |
| CN108350603A (en) * | 2015-11-13 | 2018-07-31 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
-
1987
- 1987-07-13 JP JP17450787A patent/JPS6418988A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000462A1 (en) * | 1991-06-24 | 1993-01-07 | Komatsu Electronic Metals Co., Ltd. | Device for pulling up single crystal |
| JP2562245B2 (en) * | 1991-06-24 | 1996-12-11 | コマツ電子金属株式会社 | Single crystal pulling device |
| JP2007290961A (en) * | 2001-06-28 | 2007-11-08 | Samsung Electronics Co Ltd | Czochralski puller for manufacturing single crystal silicon ingot |
| JP2010202436A (en) * | 2009-03-02 | 2010-09-16 | Sumco Corp | Single crystal pulling apparatus |
| CN108350603A (en) * | 2015-11-13 | 2018-07-31 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| CN108350603B (en) * | 2015-11-13 | 2020-11-13 | 胜高股份有限公司 | Method for producing silicon single crystal |
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