JPS5738400A - Growing method for gallium-phosphorus semiconductor crystal - Google Patents

Growing method for gallium-phosphorus semiconductor crystal

Info

Publication number
JPS5738400A
JPS5738400A JP11501580A JP11501580A JPS5738400A JP S5738400 A JPS5738400 A JP S5738400A JP 11501580 A JP11501580 A JP 11501580A JP 11501580 A JP11501580 A JP 11501580A JP S5738400 A JPS5738400 A JP S5738400A
Authority
JP
Japan
Prior art keywords
gap
melt
crystal
single crystal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11501580A
Other languages
Japanese (ja)
Other versions
JPS6041040B2 (en
Inventor
Toshiaki Kaburagi
Akio Kiyomura
Isamu Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP11501580A priority Critical patent/JPS6041040B2/en
Publication of JPS5738400A publication Critical patent/JPS5738400A/en
Publication of JPS6041040B2 publication Critical patent/JPS6041040B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture a large-sized GaP single crystal at high speed by controlling the area ratio of the surface of a Ga melt to the growing surface of a GaP crystal and the temp. gradient between the surfaces to specified values in the manufacture of a GaP single crystal by an SSD method.
CONSTITUTION: Red phosphorus 5 is put in the lower part of a container 4, and a quartz crucible 1 is set at the upper part. A GaP seed crystal 2 and a graphite plate 10 as a cooling body are placed at the bottom of the crucible 1, and a Ga melt 3 is charged in the crucible 1. The red phosphorus 5 is heated with a heater 6, and generated P vapor is reacted with the surface of the Ga melt 3 to form GaP. This GaP is diffused in the melt 3 toward the seed crystal 2 to grow a GaP single crystal 9 on the crystal 2. At this time, by controlling the ratio of the area S1 of the surface of the Ga melt 3 to the area S2 of the growing surface of the GaP crystal to S1/S2= 1/1.7W1/5 and the average temp. gradient between the surface of the melt 3 and the growing surface to 15W40°C/cm, the large-sized GaP single crystal 9 is grown at high speed.
COPYRIGHT: (C)1982,JPO&Japio
JP11501580A 1980-08-20 1980-08-20 How to grow gallium phosphide semiconductor crystals Expired JPS6041040B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11501580A JPS6041040B2 (en) 1980-08-20 1980-08-20 How to grow gallium phosphide semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11501580A JPS6041040B2 (en) 1980-08-20 1980-08-20 How to grow gallium phosphide semiconductor crystals

Publications (2)

Publication Number Publication Date
JPS5738400A true JPS5738400A (en) 1982-03-03
JPS6041040B2 JPS6041040B2 (en) 1985-09-13

Family

ID=14652142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11501580A Expired JPS6041040B2 (en) 1980-08-20 1980-08-20 How to grow gallium phosphide semiconductor crystals

Country Status (1)

Country Link
JP (1) JPS6041040B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199318U (en) * 1985-06-03 1986-12-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199318U (en) * 1985-06-03 1986-12-13
JPH0413050Y2 (en) * 1985-06-03 1992-03-27

Also Published As

Publication number Publication date
JPS6041040B2 (en) 1985-09-13

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