JPS5777098A - Method and apparatus for growing znse in liquid phase - Google Patents
Method and apparatus for growing znse in liquid phaseInfo
- Publication number
- JPS5777098A JPS5777098A JP55149693A JP14969380A JPS5777098A JP S5777098 A JPS5777098 A JP S5777098A JP 55149693 A JP55149693 A JP 55149693A JP 14969380 A JP14969380 A JP 14969380A JP S5777098 A JPS5777098 A JP S5777098A
- Authority
- JP
- Japan
- Prior art keywords
- section
- crystal
- znse
- depositing
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow a high purity ZnSe crystal by using Se as a solvent, keeping a crystal depositing section and a source crystal section at different constant temps., and depositing a ZnSe crystal at the constant temp.
CONSTITUTION: A crystal depositing section 11 and a source crystal section 12 in a crucible made of quartz are kept at different constant temps., and a heating means capable of providing a temp. difference between the sections is set. Se 13 as a solvent is poured in the section 11, and ZnSe source crystals having a small grain size are put in the upper section 12. The crucible is then sealed at a high vacuum degree and placed in a heating furnace to keep the section 11 at about 800W900°C and the section 12 at about 850W950°C, and ZnSe crystal is deposited at the constant temp. Thus, a high purity ZnSe crystal is grown.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5777098A true JPS5777098A (en) | 1982-05-14 |
JPS6128640B2 JPS6128640B2 (en) | 1986-07-01 |
Family
ID=15480740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55149693A Granted JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5777098A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0099168A2 (en) * | 1982-06-24 | 1984-01-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
US4572763A (en) * | 1982-07-14 | 1986-02-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof |
US4917757A (en) * | 1982-07-02 | 1990-04-17 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of performing solution growth of ZnSe crystals |
JP2009051322A (en) * | 2007-08-24 | 2009-03-12 | Yamaha Motor Co Ltd | Motorcycle |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62157231U (en) * | 1986-03-28 | 1987-10-06 |
-
1980
- 1980-10-24 JP JP55149693A patent/JPS5777098A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0099168A2 (en) * | 1982-06-24 | 1984-01-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
US4909998A (en) * | 1982-06-24 | 1990-03-20 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
US4917757A (en) * | 1982-07-02 | 1990-04-17 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of performing solution growth of ZnSe crystals |
US4572763A (en) * | 1982-07-14 | 1986-02-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof |
US4968491A (en) * | 1982-07-14 | 1990-11-06 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof |
JP2009051322A (en) * | 2007-08-24 | 2009-03-12 | Yamaha Motor Co Ltd | Motorcycle |
Also Published As
Publication number | Publication date |
---|---|
JPS6128640B2 (en) | 1986-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0389533A4 (en) | Sublimation growth of silicon carbide single crystals | |
JPS56114895A (en) | Manufacture of high purity single crystal by czochralski crucible pullinggup method | |
JPS5792591A (en) | Production of single crystal | |
JPS5777098A (en) | Method and apparatus for growing znse in liquid phase | |
JPS5547300A (en) | Crystal pulling device | |
SU882247A1 (en) | METHOD OF GROWING MONOCRYSTALLINE SiC | |
JPS56100200A (en) | Method and apparatus for manufacturing gallium arsenide single crystal | |
JPS5490086A (en) | Method of producing single crystal | |
JPS5562893A (en) | Single crystal growth observing device | |
JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
JPS55126597A (en) | Single crystal growing method | |
JPS57183400A (en) | Method and apparatus for liquid-phase growth of 2-6 compound | |
JPS56104799A (en) | Production of si single crystal and device therefor | |
JPS56149399A (en) | Liquid phase epitaxial growing method | |
JPS6445799A (en) | Production of cadmium telluride based crystal | |
JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
JPS55140800A (en) | Crucible for crystal growing crucible device | |
JPS5663899A (en) | Growing method of artificial rock crystal | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS5669297A (en) | Method of growing to large-size single crystal | |
JPS5228258A (en) | Method for growth of crystals from liquid phase | |
JPS5551795A (en) | Artificial rock crystal and growing method therefor | |
JPS56104797A (en) | Method of uniform doping by liquid capsule method | |
JPS553631A (en) | Manufacturing silicon carbide substrate |